JPS5683085A - Luminous semiconductor device and its manufacture - Google Patents

Luminous semiconductor device and its manufacture

Info

Publication number
JPS5683085A
JPS5683085A JP16066179A JP16066179A JPS5683085A JP S5683085 A JPS5683085 A JP S5683085A JP 16066179 A JP16066179 A JP 16066179A JP 16066179 A JP16066179 A JP 16066179A JP S5683085 A JPS5683085 A JP S5683085A
Authority
JP
Japan
Prior art keywords
epitaxial layer
type
type gaas
group element
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16066179A
Other languages
Japanese (ja)
Inventor
Susumu Furuike
Hitoo Iwasa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP16066179A priority Critical patent/JPS5683085A/en
Publication of JPS5683085A publication Critical patent/JPS5683085A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions

Abstract

PURPOSE:To increase luminous efficiency by forming a p type epitaxial layer containing a IV group element and an n type epitaxial layer containing a VI group element on a III-V group compound semiconductor substrate in the periodic table. CONSTITUTION:An n type GaAs epitaxial layer 8 is made up on an n<+> type GaAs substrate 7 using a VI group element as a dopant, and a p type epitaxial layer 9 electrically compensated is further built up on the layer 8 employing a IV group element as a dopant. When using a p<+> type GaAs substrate as an initiating material, a p type GaAs epitaxial layer is built up, and the n type GaAs epitaxial layer is formed.
JP16066179A 1979-12-10 1979-12-10 Luminous semiconductor device and its manufacture Pending JPS5683085A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16066179A JPS5683085A (en) 1979-12-10 1979-12-10 Luminous semiconductor device and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16066179A JPS5683085A (en) 1979-12-10 1979-12-10 Luminous semiconductor device and its manufacture

Publications (1)

Publication Number Publication Date
JPS5683085A true JPS5683085A (en) 1981-07-07

Family

ID=15719753

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16066179A Pending JPS5683085A (en) 1979-12-10 1979-12-10 Luminous semiconductor device and its manufacture

Country Status (1)

Country Link
JP (1) JPS5683085A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4639275A (en) * 1982-04-22 1987-01-27 The Board Of Trustees Of The University Of Illinois Forming disordered layer by controlled diffusion in heterojunction III-V semiconductor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4639275A (en) * 1982-04-22 1987-01-27 The Board Of Trustees Of The University Of Illinois Forming disordered layer by controlled diffusion in heterojunction III-V semiconductor

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