JPS5541741A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS5541741A
JPS5541741A JP11467678A JP11467678A JPS5541741A JP S5541741 A JPS5541741 A JP S5541741A JP 11467678 A JP11467678 A JP 11467678A JP 11467678 A JP11467678 A JP 11467678A JP S5541741 A JPS5541741 A JP S5541741A
Authority
JP
Japan
Prior art keywords
layer
larger
type
clad layer
semiconductor laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11467678A
Other languages
Japanese (ja)
Other versions
JPS6346590B2 (en
Inventor
Naoki Kayane
Kazutoshi Saito
Noriyuki Shige
Ryoichi Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP11467678A priority Critical patent/JPS5541741A/en
Priority to NLAANVRAGE7906948,A priority patent/NL184715C/en
Priority to CA000335825A priority patent/CA1147045A/en
Priority to FR7923340A priority patent/FR2437083B1/en
Priority to DE19792937930 priority patent/DE2937930A1/en
Priority to GB7932463A priority patent/GB2031644B/en
Priority to US06/077,735 priority patent/US4315226A/en
Publication of JPS5541741A publication Critical patent/JPS5541741A/en
Publication of JPS6346590B2 publication Critical patent/JPS6346590B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To obtain a large, stable light output in a semiconductor laser device by providing, on a GaAs substrate, a lamination comprising a clad layer, a light guide layer, an active layer and another clad layer, each layer having a mutually regulated refractive index and a forbidden band width.
CONSTITUTION: On an n-type GaAs substrate 10, an n-type Ga1-xAlxAs clad layer 1, an n-type Ga1-yAlyAs light-guide layer 2, an undope Ga1-wAlwAs active layer 3, a p-type Ga1-vAlvAs clad layer 4 (wherein x is larger than y, v is larger than w and v is larger than y) are laminated in consecutive order and subjected to the liquid phase epitaxial growth. In this arrangement, the layer 1 has a relatively smaller refractive index than the layer 2 or 3; the width of forbidden band of the layers 4 or 2 is larger than that of the layer 3; and the difference between the widths of forbidden bands of the layers 2 and 3 is larger than 0.15eV. Thereupon, the lamination is striped and its sides are covered by an embedded Ca1-zAlzAs region 6.
COPYRIGHT: (C)1980,JPO&Japio
JP11467678A 1978-09-20 1978-09-20 Semiconductor laser device Granted JPS5541741A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP11467678A JPS5541741A (en) 1978-09-20 1978-09-20 Semiconductor laser device
NLAANVRAGE7906948,A NL184715C (en) 1978-09-20 1979-09-18 SEMICONDUCTOR LASER DEVICE.
CA000335825A CA1147045A (en) 1978-09-20 1979-09-18 Semiconductor laser device
FR7923340A FR2437083B1 (en) 1978-09-20 1979-09-19 SEMICONDUCTOR LASER DEVICE
DE19792937930 DE2937930A1 (en) 1978-09-20 1979-09-19 SEMICONDUCTOR LASER ARRANGEMENT
GB7932463A GB2031644B (en) 1978-09-20 1979-09-19 Semiconductor laser device
US06/077,735 US4315226A (en) 1978-09-20 1979-09-20 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11467678A JPS5541741A (en) 1978-09-20 1978-09-20 Semiconductor laser device

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP9530681A Division JPS596079B2 (en) 1981-06-22 1981-06-22 semiconductor laser equipment
JP23871887A Division JPS6399592A (en) 1987-09-25 1987-09-25 Semiconductor laser device

Publications (2)

Publication Number Publication Date
JPS5541741A true JPS5541741A (en) 1980-03-24
JPS6346590B2 JPS6346590B2 (en) 1988-09-16

Family

ID=14643824

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11467678A Granted JPS5541741A (en) 1978-09-20 1978-09-20 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS5541741A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55145385A (en) * 1979-04-27 1980-11-12 Nec Corp Semiconductor light emitting element
JPS56169386A (en) * 1980-05-30 1981-12-26 Nec Corp Semiconductor laser
JPS5736883A (en) * 1980-08-13 1982-02-27 Nec Corp Semiconductor laser
JPS5954283A (en) * 1982-09-22 1984-03-29 Agency Of Ind Science & Technol Semiconductor laser device and manufacture thereof
JPS60192380A (en) * 1984-03-13 1985-09-30 Mitsubishi Electric Corp Semiconductor laser device
JPS6399592A (en) * 1987-09-25 1988-04-30 Hitachi Ltd Semiconductor laser device
JPH01184981A (en) * 1988-01-20 1989-07-24 Sanyo Electric Co Ltd Manufacture of semiconductor laser
US5355384A (en) * 1992-09-29 1994-10-11 Mitsubishi Kasei Corporation Semiconductor laser element

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4889687A (en) * 1972-02-23 1973-11-22
JPS531482A (en) * 1976-06-25 1978-01-09 Mitsubishi Electric Corp Semiconductor injection type laser

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4889687A (en) * 1972-02-23 1973-11-22
JPS531482A (en) * 1976-06-25 1978-01-09 Mitsubishi Electric Corp Semiconductor injection type laser

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55145385A (en) * 1979-04-27 1980-11-12 Nec Corp Semiconductor light emitting element
JPS56169386A (en) * 1980-05-30 1981-12-26 Nec Corp Semiconductor laser
JPS5736883A (en) * 1980-08-13 1982-02-27 Nec Corp Semiconductor laser
JPS5954283A (en) * 1982-09-22 1984-03-29 Agency Of Ind Science & Technol Semiconductor laser device and manufacture thereof
JPS6354234B2 (en) * 1982-09-22 1988-10-27 Kogyo Gijutsuin
JPS60192380A (en) * 1984-03-13 1985-09-30 Mitsubishi Electric Corp Semiconductor laser device
JPS6399592A (en) * 1987-09-25 1988-04-30 Hitachi Ltd Semiconductor laser device
JPH01184981A (en) * 1988-01-20 1989-07-24 Sanyo Electric Co Ltd Manufacture of semiconductor laser
US5355384A (en) * 1992-09-29 1994-10-11 Mitsubishi Kasei Corporation Semiconductor laser element

Also Published As

Publication number Publication date
JPS6346590B2 (en) 1988-09-16

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