JPS5737891A - Semiconductor laser device - Google Patents
Semiconductor laser deviceInfo
- Publication number
- JPS5737891A JPS5737891A JP11376680A JP11376680A JPS5737891A JP S5737891 A JPS5737891 A JP S5737891A JP 11376680 A JP11376680 A JP 11376680A JP 11376680 A JP11376680 A JP 11376680A JP S5737891 A JPS5737891 A JP S5737891A
- Authority
- JP
- Japan
- Prior art keywords
- inas
- range
- inas1
- composition
- 4mum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To obtain a laser having such a relatively long wavelength range as 3- 4mum by selecting compositions of InAsSbP as specified within the range of maintaining a relationship of grid alignment with InAs in a double hetero-junction on an InAs substrate varying the composition thereof. CONSTITUTION:Based on InAs, InSb and InP, an InAs1-U-VSbUPV clad layer, an InAs1-W-XSbWPX active layer and InAs1-Y-ZSbYPZ clad layer are laid in layers on an InAs substrate. A forbidden band range Eg (dotted line) and a dielectric constant epsilon (chain line) with respect to each solid phase composition shall meet the requirement of 0<(U+V)<=1,0<=(W+X)<1,0(X+Y)<=1 within the range of maintaining a relationship of grid alignment with InAs while the composition is selected to meet the requirement of O<=W<U, Y and O<=X<V, Z to form a double hetero junction. This provides a laser beam which has a good alignment with a two-dimensional III-V group compound semiconductor substrate while in such a relatively long wavelength as 3-4mum.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11376680A JPS5737891A (en) | 1980-08-19 | 1980-08-19 | Semiconductor laser device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11376680A JPS5737891A (en) | 1980-08-19 | 1980-08-19 | Semiconductor laser device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5737891A true JPS5737891A (en) | 1982-03-02 |
Family
ID=14620593
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11376680A Pending JPS5737891A (en) | 1980-08-19 | 1980-08-19 | Semiconductor laser device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5737891A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5990955A (en) * | 1982-11-17 | 1984-05-25 | Nec Corp | Manufacture of photosensor array |
JPS62291985A (en) * | 1986-06-12 | 1987-12-18 | Kokusai Denshin Denwa Co Ltd <Kdd> | Semiconductor laser |
JP2015534270A (en) * | 2012-09-14 | 2015-11-26 | リミテッド・ライアビリティ・カンパニー”エルイーディ・マイクロセンサー・エヌティ”Limited Liability Companyled Microsensor Nt | Heterostructure for mid-infrared spectral range, and light emitting diode and photodiode manufacturing method based thereon |
-
1980
- 1980-08-19 JP JP11376680A patent/JPS5737891A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5990955A (en) * | 1982-11-17 | 1984-05-25 | Nec Corp | Manufacture of photosensor array |
JPS62291985A (en) * | 1986-06-12 | 1987-12-18 | Kokusai Denshin Denwa Co Ltd <Kdd> | Semiconductor laser |
JP2015534270A (en) * | 2012-09-14 | 2015-11-26 | リミテッド・ライアビリティ・カンパニー”エルイーディ・マイクロセンサー・エヌティ”Limited Liability Companyled Microsensor Nt | Heterostructure for mid-infrared spectral range, and light emitting diode and photodiode manufacturing method based thereon |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS55165691A (en) | Compound semiconductor laser element | |
JPS5640292A (en) | Semiconductor laser | |
JPS5710992A (en) | Semiconductor device and manufacture therefor | |
EP0000638B1 (en) | Devices including epitaxial layers of dissimilar crystalline materials | |
JPS5513907A (en) | Avalnche photo diode with semiconductor hetero construction | |
JPS5320881A (en) | Photo semiconductor device | |
EP0097767B1 (en) | A semiconductor device | |
JPS5737891A (en) | Semiconductor laser device | |
JPS5541741A (en) | Semiconductor laser device | |
JPS57128092A (en) | Imbedded type semiconductor laser device | |
JPS57183091A (en) | Manufacture of optical integrated circuit | |
Nuese et al. | Efficient 1.06-µm emission from In x Ga 1-x As electroluminescent diodes | |
JPS5524418A (en) | Light integrated circuit | |
JPS5316593A (en) | Semiconductor photo detector | |
JPS5412261A (en) | Semiconductor wafer | |
JPS5310273A (en) | Mesa type semiconductor device | |
JPS5582473A (en) | Semiconductor photo-receptor | |
JPS5455183A (en) | Semiconductor device | |
JPS53112080A (en) | Semiconductor laser | |
JPS547891A (en) | Manufacture for planar semiconductor light emission device | |
JPS5317084A (en) | Buried hetero type semiconductor laser device | |
JPS52115678A (en) | Double hetero type laser element | |
JPS5680195A (en) | Semiconductor laser device | |
JPS5598884A (en) | Semiconductor light emitting device | |
JPS54118185A (en) | Multi-wavelength band luminous element |