JPS5737891A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS5737891A
JPS5737891A JP11376680A JP11376680A JPS5737891A JP S5737891 A JPS5737891 A JP S5737891A JP 11376680 A JP11376680 A JP 11376680A JP 11376680 A JP11376680 A JP 11376680A JP S5737891 A JPS5737891 A JP S5737891A
Authority
JP
Japan
Prior art keywords
inas
range
inas1
composition
4mum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11376680A
Other languages
Japanese (ja)
Inventor
Naoki Kobayashi
Yoshiharu Horikoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP11376680A priority Critical patent/JPS5737891A/en
Publication of JPS5737891A publication Critical patent/JPS5737891A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To obtain a laser having such a relatively long wavelength range as 3- 4mum by selecting compositions of InAsSbP as specified within the range of maintaining a relationship of grid alignment with InAs in a double hetero-junction on an InAs substrate varying the composition thereof. CONSTITUTION:Based on InAs, InSb and InP, an InAs1-U-VSbUPV clad layer, an InAs1-W-XSbWPX active layer and InAs1-Y-ZSbYPZ clad layer are laid in layers on an InAs substrate. A forbidden band range Eg (dotted line) and a dielectric constant epsilon (chain line) with respect to each solid phase composition shall meet the requirement of 0<(U+V)<=1,0<=(W+X)<1,0(X+Y)<=1 within the range of maintaining a relationship of grid alignment with InAs while the composition is selected to meet the requirement of O<=W<U, Y and O<=X<V, Z to form a double hetero junction. This provides a laser beam which has a good alignment with a two-dimensional III-V group compound semiconductor substrate while in such a relatively long wavelength as 3-4mum.
JP11376680A 1980-08-19 1980-08-19 Semiconductor laser device Pending JPS5737891A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11376680A JPS5737891A (en) 1980-08-19 1980-08-19 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11376680A JPS5737891A (en) 1980-08-19 1980-08-19 Semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS5737891A true JPS5737891A (en) 1982-03-02

Family

ID=14620593

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11376680A Pending JPS5737891A (en) 1980-08-19 1980-08-19 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS5737891A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5990955A (en) * 1982-11-17 1984-05-25 Nec Corp Manufacture of photosensor array
JPS62291985A (en) * 1986-06-12 1987-12-18 Kokusai Denshin Denwa Co Ltd <Kdd> Semiconductor laser
JP2015534270A (en) * 2012-09-14 2015-11-26 リミテッド・ライアビリティ・カンパニー”エルイーディ・マイクロセンサー・エヌティ”Ｌｉｍｉｔｅｄ Ｌｉａｂｉｌｉｔｙ Ｃｏｍｐａｎｙｌｅｄ Ｍｉｃｒｏｓｅｎｓｏｒ Ｎｔ Heterostructure for mid-infrared spectral range, and light emitting diode and photodiode manufacturing method based thereon

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5990955A (en) * 1982-11-17 1984-05-25 Nec Corp Manufacture of photosensor array
JPS62291985A (en) * 1986-06-12 1987-12-18 Kokusai Denshin Denwa Co Ltd <Kdd> Semiconductor laser
JP2015534270A (en) * 2012-09-14 2015-11-26 リミテッド・ライアビリティ・カンパニー”エルイーディ・マイクロセンサー・エヌティ”Ｌｉｍｉｔｅｄ Ｌｉａｂｉｌｉｔｙ Ｃｏｍｐａｎｙｌｅｄ Ｍｉｃｒｏｓｅｎｓｏｒ Ｎｔ Heterostructure for mid-infrared spectral range, and light emitting diode and photodiode manufacturing method based thereon

Similar Documents

Publication Publication Date Title
JPS55165691A (en) Compound semiconductor laser element
JPS5640292A (en) Semiconductor laser
JPS5710992A (en) Semiconductor device and manufacture therefor
EP0000638B1 (en) Devices including epitaxial layers of dissimilar crystalline materials
JPS5513907A (en) Avalnche photo diode with semiconductor hetero construction
JPS5320881A (en) Photo semiconductor device
EP0097767B1 (en) A semiconductor device
JPS5737891A (en) Semiconductor laser device
JPS5541741A (en) Semiconductor laser device
JPS57128092A (en) Imbedded type semiconductor laser device
JPS57183091A (en) Manufacture of optical integrated circuit
Nuese et al. Efficient 1.06-µm emission from In x Ga 1-x As electroluminescent diodes
JPS5524418A (en) Light integrated circuit
JPS5316593A (en) Semiconductor photo detector
JPS5412261A (en) Semiconductor wafer
JPS5310273A (en) Mesa type semiconductor device
JPS5582473A (en) Semiconductor photo-receptor
JPS5455183A (en) Semiconductor device
JPS53112080A (en) Semiconductor laser
JPS547891A (en) Manufacture for planar semiconductor light emission device
JPS5317084A (en) Buried hetero type semiconductor laser device
JPS52115678A (en) Double hetero type laser element
JPS5680195A (en) Semiconductor laser device
JPS5598884A (en) Semiconductor light emitting device
JPS54118185A (en) Multi-wavelength band luminous element