JPS5618426A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5618426A JPS5618426A JP9328579A JP9328579A JPS5618426A JP S5618426 A JPS5618426 A JP S5618426A JP 9328579 A JP9328579 A JP 9328579A JP 9328579 A JP9328579 A JP 9328579A JP S5618426 A JPS5618426 A JP S5618426A
- Authority
- JP
- Japan
- Prior art keywords
- groove
- layer
- gas
- silicon
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000010410 layer Substances 0.000 abstract 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 239000007789 gas Substances 0.000 abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 229910052783 alkali metal Inorganic materials 0.000 abstract 1
- 150000001340 alkali metals Chemical class 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 239000011247 coating layer Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 229910001882 dioxygen Inorganic materials 0.000 abstract 1
- 238000001312 dry etching Methods 0.000 abstract 1
- 125000001153 fluoro group Chemical class F* 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000001020 plasma etching Methods 0.000 abstract 1
- 229920001721 polyimide Polymers 0.000 abstract 1
- 239000009719 polyimide resin Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
- H01L21/31055—Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To keep the flatness, by providing a coating layer flatly on polycrystalline silicon which is filled in an isolating V groove; and performing plasma etching with a gas, wherein mixing ratio of gas of fluorine series and oxygen gas is adjusted and etching speeds are equal. CONSTITUTION:The V groove is formed in an epitaxial layer 2 provided on a silicon substrate 1 by using an SiO2 layer 3 and an Si3N4 layer 4. An SiO2 layer 3' is formed on the walls of the groove, and the polycrsystalline silicon 5 is filled in the groove. A resinous coating material layer 6 comprising polyimide resin and the like is provided on said silicon 5, and the surface of the layer 6 is made approximately flat. Plasma ethching is performed by a gas, wherein the mixing ratio of C2 F6 gas and O2 is adjusted and the etching speeds of the layers 5 and 6 become equal; thereby the polycrystalline silicon outside the groove is removed. In this method, the surface of the V groove is flattened by dry etching, and the intrusion of alkali metals and the like can be prevented.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9328579A JPS5618426A (en) | 1979-07-24 | 1979-07-24 | Manufacture of semiconductor device |
IE150580A IE52971B1 (en) | 1979-07-23 | 1980-07-21 | Method of manufacturing a semiconductor device wherein first and second layers are formed |
DE8080302457T DE3072040D1 (en) | 1979-07-23 | 1980-07-21 | Method of manufacturing a semiconductor device wherein first and second layers are formed |
EP80302457A EP0023146B1 (en) | 1979-07-23 | 1980-07-21 | Method of manufacturing a semiconductor device wherein first and second layers are formed |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9328579A JPS5618426A (en) | 1979-07-24 | 1979-07-24 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5618426A true JPS5618426A (en) | 1981-02-21 |
Family
ID=14078135
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9328579A Pending JPS5618426A (en) | 1979-07-23 | 1979-07-24 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5618426A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58138834A (en) * | 1982-02-10 | 1983-08-17 | Nippon Sagiyousen Kyokai | Walking type dredger |
JPS58164877U (en) * | 1982-04-30 | 1983-11-02 | 三菱重工業株式会社 | traveling device |
JPS59179463A (en) * | 1983-03-30 | 1984-10-12 | Agency Of Ind Science & Technol | Four-leg walking machine |
US4596071A (en) * | 1983-09-05 | 1986-06-24 | Oki Electric Industry Co., Ltd. | Method of making semiconductor devices having dielectric isolation regions |
JPS624581A (en) * | 1985-06-29 | 1987-01-10 | 工業技術院長 | Mobile type manipulator |
JPS62143429A (en) * | 1985-12-17 | 1987-06-26 | Fujitsu Ltd | Manufacture of semiconductor device |
US8011487B2 (en) | 2006-04-18 | 2011-09-06 | Kabushiki Kaisha F.C.C. | Clutch outer member for multi-plate clutch |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50107877A (en) * | 1974-01-30 | 1975-08-25 | ||
JPS52131471A (en) * | 1976-04-28 | 1977-11-04 | Hitachi Ltd | Surface treatment of substrate |
-
1979
- 1979-07-24 JP JP9328579A patent/JPS5618426A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50107877A (en) * | 1974-01-30 | 1975-08-25 | ||
JPS52131471A (en) * | 1976-04-28 | 1977-11-04 | Hitachi Ltd | Surface treatment of substrate |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58138834A (en) * | 1982-02-10 | 1983-08-17 | Nippon Sagiyousen Kyokai | Walking type dredger |
JPS58164877U (en) * | 1982-04-30 | 1983-11-02 | 三菱重工業株式会社 | traveling device |
JPS59179463A (en) * | 1983-03-30 | 1984-10-12 | Agency Of Ind Science & Technol | Four-leg walking machine |
JPH0234753B2 (en) * | 1983-03-30 | 1990-08-06 | Kogyo Gijutsuin | |
US4596071A (en) * | 1983-09-05 | 1986-06-24 | Oki Electric Industry Co., Ltd. | Method of making semiconductor devices having dielectric isolation regions |
JPS624581A (en) * | 1985-06-29 | 1987-01-10 | 工業技術院長 | Mobile type manipulator |
JPH0567393B2 (en) * | 1985-06-29 | 1993-09-24 | Kogyo Gijutsuin | |
JPS62143429A (en) * | 1985-12-17 | 1987-06-26 | Fujitsu Ltd | Manufacture of semiconductor device |
US8011487B2 (en) | 2006-04-18 | 2011-09-06 | Kabushiki Kaisha F.C.C. | Clutch outer member for multi-plate clutch |
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