JPS54152874A - Semiconductor device and its manufacture - Google Patents
Semiconductor device and its manufactureInfo
- Publication number
- JPS54152874A JPS54152874A JP6100478A JP6100478A JPS54152874A JP S54152874 A JPS54152874 A JP S54152874A JP 6100478 A JP6100478 A JP 6100478A JP 6100478 A JP6100478 A JP 6100478A JP S54152874 A JPS54152874 A JP S54152874A
- Authority
- JP
- Japan
- Prior art keywords
- region
- substrate
- layer
- featuring
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 5
- 238000009792 diffusion process Methods 0.000 abstract 3
- 239000012535 impurity Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 3
- 239000002775 capsule Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 239000010453 quartz Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
- Thyristors (AREA)
Abstract
PURPOSE:To increase the forward dielectric strength up to the same level as the reverse dielectric strength for the semiconductor device featuring the negative bevel at the periphery of the PN junction by setting previously the impurity density near the negative bevel surface lower than the internal impurity density at that region. CONSTITUTION:Region 4a featuring a low acceptor density is provided near the bevel surface of P-type base region 4 which constitutes the thyristor. Thus, N-type Si substrate 3 to be N-type base layer is cacuum-enclosed into the quartz capsule along with Ga which is the diffusion source, and then Ga is diffused into substrate 3 through the heat treatment. After this, substrate 3 is taken out of the capsule to be heated up in the oxygen atmosphere in order to form P-type emitter layer 2 and base layer 4 on both surfaces of substrate 3. Then the negative bevel is formed at the both edges from layer 4 through substrate 3, and the entire surface is covered with the SiO2 film with the window drilled. Thus, N-type emitter region 5 is formed by diffusion within layer 4. In this case, an out-diffusion is given with Ga simultaneously to cause region 4 featuring a lower impurity density than region 4a on the bevel surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6100478A JPS54152874A (en) | 1978-05-24 | 1978-05-24 | Semiconductor device and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6100478A JPS54152874A (en) | 1978-05-24 | 1978-05-24 | Semiconductor device and its manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS54152874A true JPS54152874A (en) | 1979-12-01 |
Family
ID=13158761
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6100478A Pending JPS54152874A (en) | 1978-05-24 | 1978-05-24 | Semiconductor device and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54152874A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6466965A (en) * | 1987-08-11 | 1989-03-13 | Asea Brown Boveri | Gate turn-off thyristor |
| EP0725444A1 (en) * | 1995-02-03 | 1996-08-07 | Hitachi, Ltd. | Thyristor device and method of manufacturing same |
-
1978
- 1978-05-24 JP JP6100478A patent/JPS54152874A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6466965A (en) * | 1987-08-11 | 1989-03-13 | Asea Brown Boveri | Gate turn-off thyristor |
| EP0725444A1 (en) * | 1995-02-03 | 1996-08-07 | Hitachi, Ltd. | Thyristor device and method of manufacturing same |
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