JPS4926456A - - Google Patents
Info
- Publication number
- JPS4926456A JPS4926456A JP6871372A JP6871372A JPS4926456A JP S4926456 A JPS4926456 A JP S4926456A JP 6871372 A JP6871372 A JP 6871372A JP 6871372 A JP6871372 A JP 6871372A JP S4926456 A JPS4926456 A JP S4926456A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6871372A JPS4926456A (en) | 1972-07-11 | 1972-07-11 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6871372A JPS4926456A (en) | 1972-07-11 | 1972-07-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS4926456A true JPS4926456A (en) | 1974-03-08 |
Family
ID=13381686
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6871372A Pending JPS4926456A (en) | 1972-07-11 | 1972-07-11 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS4926456A (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5534416A (en) * | 1978-09-01 | 1980-03-11 | Hitachi Ltd | Method of manufacturing semiconductor device |
| JPS5615035A (en) * | 1979-07-17 | 1981-02-13 | Agency Of Ind Science & Technol | Manufacture of semiconductor device |
| JPS5633822A (en) * | 1979-08-29 | 1981-04-04 | Hitachi Ltd | Preparation of semiconductor device |
| JPS5650577A (en) * | 1979-10-01 | 1981-05-07 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
| JPS5655040A (en) * | 1979-10-11 | 1981-05-15 | Matsushita Electric Ind Co Ltd | Treatment of semiconductor substrate |
| JPS5662319A (en) * | 1979-10-26 | 1981-05-28 | Hitachi Ltd | Impurity dispersion method |
| JPS57111020A (en) * | 1981-11-16 | 1982-07-10 | Hitachi Ltd | Manufacture of semiconductor device |
| JPS6062459U (en) * | 1983-10-06 | 1985-05-01 | 有限会社内外工芸 | Frozen takoyaki ingredients storage container |
| JPS60117613A (en) * | 1983-11-30 | 1985-06-25 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS60216539A (en) * | 1984-04-12 | 1985-10-30 | Fuji Electric Corp Res & Dev Ltd | Manufacture of semiconductor device |
| JPS60216561A (en) * | 1984-04-12 | 1985-10-30 | Fuji Electric Corp Res & Dev Ltd | Heat-treating method |
| JP2007507897A (en) * | 2003-09-29 | 2007-03-29 | ウルトラテック インク | Laser thermal annealing of lightly doped silicon substrates |
-
1972
- 1972-07-11 JP JP6871372A patent/JPS4926456A/ja active Pending
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5534416A (en) * | 1978-09-01 | 1980-03-11 | Hitachi Ltd | Method of manufacturing semiconductor device |
| JPS633447B2 (en) * | 1979-07-17 | 1988-01-23 | Kogyo Gijutsuin | |
| JPS5615035A (en) * | 1979-07-17 | 1981-02-13 | Agency Of Ind Science & Technol | Manufacture of semiconductor device |
| JPS5633822A (en) * | 1979-08-29 | 1981-04-04 | Hitachi Ltd | Preparation of semiconductor device |
| JPS639370B2 (en) * | 1979-08-29 | 1988-02-29 | Hitachi Ltd | |
| JPS5650577A (en) * | 1979-10-01 | 1981-05-07 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
| JPS5655040A (en) * | 1979-10-11 | 1981-05-15 | Matsushita Electric Ind Co Ltd | Treatment of semiconductor substrate |
| JPS596057B2 (en) * | 1979-10-11 | 1984-02-08 | 松下電器産業株式会社 | Semiconductor substrate processing method |
| JPS5662319A (en) * | 1979-10-26 | 1981-05-28 | Hitachi Ltd | Impurity dispersion method |
| JPS6339107B2 (en) * | 1979-10-26 | 1988-08-03 | Hitachi Ltd | |
| JPS57111020A (en) * | 1981-11-16 | 1982-07-10 | Hitachi Ltd | Manufacture of semiconductor device |
| JPS6062459U (en) * | 1983-10-06 | 1985-05-01 | 有限会社内外工芸 | Frozen takoyaki ingredients storage container |
| JPS60117613A (en) * | 1983-11-30 | 1985-06-25 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS60216539A (en) * | 1984-04-12 | 1985-10-30 | Fuji Electric Corp Res & Dev Ltd | Manufacture of semiconductor device |
| JPS60216561A (en) * | 1984-04-12 | 1985-10-30 | Fuji Electric Corp Res & Dev Ltd | Heat-treating method |
| JP2007507897A (en) * | 2003-09-29 | 2007-03-29 | ウルトラテック インク | Laser thermal annealing of lightly doped silicon substrates |