JPS56137637A - Etching of aluminum film - Google Patents

Etching of aluminum film

Info

Publication number
JPS56137637A
JPS56137637A JP4051780A JP4051780A JPS56137637A JP S56137637 A JPS56137637 A JP S56137637A JP 4051780 A JP4051780 A JP 4051780A JP 4051780 A JP4051780 A JP 4051780A JP S56137637 A JPS56137637 A JP S56137637A
Authority
JP
Japan
Prior art keywords
aluminum
film
gas
ccl4
etched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4051780A
Other languages
Japanese (ja)
Inventor
Yoshimichi Hirobe
Yoshinori Kureishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP4051780A priority Critical patent/JPS56137637A/en
Publication of JPS56137637A publication Critical patent/JPS56137637A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To plasma-etch an aluminum film with a microscale precision by providing CCl4, PCl3 or BCl3 as main components and mixing them with a gas whose ionization energy is smaller than the former but whose mass value is larger than Cl2. CONSTITUTION:Gas such as Kr, Xe whose mass value is larger than Cl is positively added to an etching gas having a chloride gas such as CCl4 as a main component, so that a film such as aluminum, etc. is plasma-etched. In this manner, aluminum can be etched with high reproducibility in a brief period of time without causing damage on a photoregist on the aluminum. Thus it is possible to remove an alumina film on the surface of aluminum with extreme efficiency and resultantly process a micropattern on an aluminum film with high precision.
JP4051780A 1980-03-31 1980-03-31 Etching of aluminum film Pending JPS56137637A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4051780A JPS56137637A (en) 1980-03-31 1980-03-31 Etching of aluminum film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4051780A JPS56137637A (en) 1980-03-31 1980-03-31 Etching of aluminum film

Publications (1)

Publication Number Publication Date
JPS56137637A true JPS56137637A (en) 1981-10-27

Family

ID=12582702

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4051780A Pending JPS56137637A (en) 1980-03-31 1980-03-31 Etching of aluminum film

Country Status (1)

Country Link
JP (1) JPS56137637A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6184835A (en) * 1984-10-02 1986-04-30 Matsushita Electric Ind Co Ltd Dry etching method for aluminum and aluminum-silicon alloy
EP0528655A2 (en) * 1991-08-16 1993-02-24 Hitachi, Ltd. Dry-etching method and apparatus
US5384009A (en) * 1993-06-16 1995-01-24 Applied Materials, Inc. Plasma etching using xenon
US5411631A (en) * 1992-11-11 1995-05-02 Tokyo Electron Limited Dry etching method

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6184835A (en) * 1984-10-02 1986-04-30 Matsushita Electric Ind Co Ltd Dry etching method for aluminum and aluminum-silicon alloy
EP0528655A2 (en) * 1991-08-16 1993-02-24 Hitachi, Ltd. Dry-etching method and apparatus
US5411631A (en) * 1992-11-11 1995-05-02 Tokyo Electron Limited Dry etching method
US5384009A (en) * 1993-06-16 1995-01-24 Applied Materials, Inc. Plasma etching using xenon
EP0637067A2 (en) * 1993-06-16 1995-02-01 Applied Materials, Inc. Plasma etching using xenon
EP0637067A3 (en) * 1993-06-16 1995-05-17 Applied Materials Inc Plasma etching using xenon.

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