JPS5368978A - Etching method - Google Patents
Etching methodInfo
- Publication number
- JPS5368978A JPS5368978A JP14509576A JP14509576A JPS5368978A JP S5368978 A JPS5368978 A JP S5368978A JP 14509576 A JP14509576 A JP 14509576A JP 14509576 A JP14509576 A JP 14509576A JP S5368978 A JPS5368978 A JP S5368978A
- Authority
- JP
- Japan
- Prior art keywords
- etching method
- atmosphere
- etching
- mattern
- fidelity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE: To make possible deep etching with fidelity to patterns by defining the gas pressure range of an atmosphere at the time of providing a mask mattern on the metal to be etched and performing sputter etching in the mixed atmosphere of chlorine and oxygen.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14509576A JPS5368978A (en) | 1976-12-01 | 1976-12-01 | Etching method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14509576A JPS5368978A (en) | 1976-12-01 | 1976-12-01 | Etching method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5368978A true JPS5368978A (en) | 1978-06-19 |
Family
ID=15377247
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14509576A Pending JPS5368978A (en) | 1976-12-01 | 1976-12-01 | Etching method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5368978A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4360414A (en) * | 1980-12-05 | 1982-11-23 | Siemens Aktiengesellschaft | Method of producing structures comprised of layers consisting of silicides or silicide-polysilicon by reactive sputter etching |
-
1976
- 1976-12-01 JP JP14509576A patent/JPS5368978A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4360414A (en) * | 1980-12-05 | 1982-11-23 | Siemens Aktiengesellschaft | Method of producing structures comprised of layers consisting of silicides or silicide-polysilicon by reactive sputter etching |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5326505A (en) | Voice rec ognizing device | |
JPS5368978A (en) | Etching method | |
JPS5329672A (en) | Gas etching apparatus | |
JPS5320769A (en) | Plasma etching method of metal electrodes | |
JPS51136289A (en) | Semi-conductor producing | |
JPS5321574A (en) | Contact and separation method of photo mask | |
JPS52104066A (en) | Selective etching method of thermosetting organic materials | |
JPS53127266A (en) | Forming method of marker | |
JPS5326575A (en) | Ion etching method | |
JPS51139263A (en) | Method of selective oxidation of silicon substrate | |
JPS5362474A (en) | Cleaning method of metal photo mask | |
JPS53105982A (en) | Micropattern formation method | |
JPS5222598A (en) | Etching method of chromium oxide | |
JPS5311581A (en) | Etching method | |
JPS5258375A (en) | Production of low reflection metal mask | |
JPS52141146A (en) | Square root extraction arithmetic system | |
JPS5321573A (en) | Etching method | |
JPS51148366A (en) | Pattern formation method | |
JPS5315765A (en) | Vacuum caontact prevention method of hard mask | |
JPS5250690A (en) | Etching process | |
JPS5382268A (en) | Production of mask | |
JPS5213778A (en) | Plasma-etching method | |
JPS5287986A (en) | Etching method | |
JPS5397374A (en) | Mask producing method | |
JPS5397775A (en) | Etching method |