JPS56133877A - Semiconductor diaphragm type sensor - Google Patents

Semiconductor diaphragm type sensor

Info

Publication number: JPS56133877A
Authority: JP; Japan
Prior art keywords: thick; strain producing; single crystal; rigid body; semiconductor single
Prior art date: 1980-03-24
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Pending

Application number

JP3775480A

Other languages

English (en)

Inventor

Masanori Tanabe

Satoshi Shimada

Motohisa Nishihara

Kazuji Yamada

Yoshitaka Matsuoka

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Hitachi Ltd

Original Assignee

Hitachi Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1980-03-24

Filing date

1980-03-24

Publication date

1981-10-20

1980-03-24 Application filed by Hitachi Ltd filed Critical Hitachi Ltd

1980-03-24 Priority to JP3775480A priority Critical patent/JPS56133877A/ja

1981-10-20 Publication of JPS56133877A publication Critical patent/JPS56133877A/ja

Status Pending legal-status Critical Current

Links

239000004065 semiconductor Substances 0.000 title abstract 5
239000013078 crystal Substances 0.000 abstract 4
238000000034 method Methods 0.000 abstract 2
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
239000003513 alkali Substances 0.000 abstract 1
238000009792 diffusion process Methods 0.000 abstract 1
238000005530 etching Methods 0.000 abstract 1
239000012535 impurity Substances 0.000 abstract 1
239000000463 material Substances 0.000 abstract 1
230000002093 peripheral effect Effects 0.000 abstract 1
230000035945 sensitivity Effects 0.000 abstract 1
229910052710 silicon Inorganic materials 0.000 abstract 1
239000010703 silicon Substances 0.000 abstract 1
239000000758 substrate Substances 0.000 abstract 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Physics & Mathematics (AREA)
Ceramic Engineering (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Pressure Sensors (AREA)

JP3775480A 1980-03-24 1980-03-24 Semiconductor diaphragm type sensor Pending JPS56133877A (en)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP3775480A JPS56133877A (en)	1980-03-24	1980-03-24	Semiconductor diaphragm type sensor

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP3775480A JPS56133877A (en)	1980-03-24	1980-03-24	Semiconductor diaphragm type sensor

Publications (1)

Publication Number	Publication Date
JPS56133877A true JPS56133877A (en)	1981-10-20

Family

ID=12506251

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP3775480A Pending JPS56133877A (en)	1980-03-24	1980-03-24	Semiconductor diaphragm type sensor

Country Status (1)

Country	Link
JP (1)	JPS56133877A (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS61154179A (ja) *	1984-12-27	1986-07-12	Nec Corp	圧力センサ
JPS61154180A (ja) *	1984-12-27	1986-07-12	Nec Corp	圧力センサ
JPS62158367A (ja) *	1985-12-28	1987-07-14	Anritsu Corp	圧力センサ
US5233213A (en) *	1990-07-14	1993-08-03	Robert Bosch Gmbh	Silicon-mass angular acceleration sensor
JP2009300197A (ja) *	2008-06-12	2009-12-24	Alps Electric Co Ltd	半導体圧力センサ

Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5169678A (ja) *	1974-11-06	1976-06-16	Philips Nv

1980
- 1980-03-24 JP JP3775480A patent/JPS56133877A/ja active Pending

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5169678A (ja) *	1974-11-06	1976-06-16	Philips Nv

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS61154179A (ja) *	1984-12-27	1986-07-12	Nec Corp	圧力センサ
JPS61154180A (ja) *	1984-12-27	1986-07-12	Nec Corp	圧力センサ
JPS62158367A (ja) *	1985-12-28	1987-07-14	Anritsu Corp	圧力センサ
JPH0564866B2 (ja) *	1985-12-28	1993-09-16	Anritsu Corp
US5233213A (en) *	1990-07-14	1993-08-03	Robert Bosch Gmbh	Silicon-mass angular acceleration sensor
JP2009300197A (ja) *	2008-06-12	2009-12-24	Alps Electric Co Ltd	半導体圧力センサ

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