JPS57170576A - Manufacture of semiconductor photodetector - Google Patents
Manufacture of semiconductor photodetectorInfo
- Publication number
- JPS57170576A JPS57170576A JP56056716A JP5671681A JPS57170576A JP S57170576 A JPS57170576 A JP S57170576A JP 56056716 A JP56056716 A JP 56056716A JP 5671681 A JP5671681 A JP 5671681A JP S57170576 A JPS57170576 A JP S57170576A
- Authority
- JP
- Japan
- Prior art keywords
- si3n4
- mask
- sio2
- bulk
- side surfaces
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 10
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 7
- 229910052681 coesite Inorganic materials 0.000 abstract 5
- 229910052906 cristobalite Inorganic materials 0.000 abstract 5
- 239000000377 silicon dioxide Substances 0.000 abstract 5
- 235000012239 silicon dioxide Nutrition 0.000 abstract 5
- 229910052682 stishovite Inorganic materials 0.000 abstract 5
- 229910052905 tridymite Inorganic materials 0.000 abstract 5
- 238000005530 etching Methods 0.000 abstract 3
- 229910020489 SiO3 Inorganic materials 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000010030 laminating Methods 0.000 abstract 1
- 230000004043 responsiveness Effects 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To uniformly form an etching hole of large diameter in a desired depth with good reproducibility on the back surface of an Si wafer by laminating an SiO2, an Si3N4 films on both side surfaces of the Si wafer, etching them and selectiely formed Si3N4 mask on both side surfaces. CONSTITUTION:SiO2 11a, 11b and Si3N4 12a, 12b are formed on both side surfaces of an n type Si bulk 1 having a thickness of approx. 100mum, and an SiO2 13 is superposed on the Si3N4 12a. A circular resist mask 14a and a circular resist mask 14b responsive to the mask 14a are respectively formed on the upper source and the lower surface of the bulk 1. The SiO3 is etched via the mask 14a, and then the Si3N4 12b, SiO2 11b are sequentially removed with plasma and etchant via the mask 14b. The upper surface is protected with wax, with the remaining Si3N4 12b as a mask the lower surface of the bulk 1 is etched in the desired depth with good reproducibility. When an anisotropic etching is cooperated in the final finishing, the surface accuracy and uniformity can be improved. Then, it is sequentially etched, the laminated masks of the Si3N4 13 and SiO2 12 remaining only on the upper surface, an electrode layer 3 and a channel stopper 2 are formed by diffusion, and a photodiode is completed as prescribed. According to this structure, high yield, high sensitivity and high speed responsiveness can be obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56056716A JPS57170576A (en) | 1981-04-15 | 1981-04-15 | Manufacture of semiconductor photodetector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56056716A JPS57170576A (en) | 1981-04-15 | 1981-04-15 | Manufacture of semiconductor photodetector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57170576A true JPS57170576A (en) | 1982-10-20 |
Family
ID=13035201
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56056716A Pending JPS57170576A (en) | 1981-04-15 | 1981-04-15 | Manufacture of semiconductor photodetector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57170576A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4782028A (en) * | 1987-08-27 | 1988-11-01 | Santa Barbara Research Center | Process methodology for two-sided fabrication of devices on thinned silicon |
| JPH02241066A (en) * | 1989-03-15 | 1990-09-25 | Yokogawa Electric Corp | Semiconductor photodetector |
-
1981
- 1981-04-15 JP JP56056716A patent/JPS57170576A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4782028A (en) * | 1987-08-27 | 1988-11-01 | Santa Barbara Research Center | Process methodology for two-sided fabrication of devices on thinned silicon |
| JPH02241066A (en) * | 1989-03-15 | 1990-09-25 | Yokogawa Electric Corp | Semiconductor photodetector |
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