JPS5522838A - Manufacturing method of semiconductor strain gauge type pressure senser chip - Google Patents

Manufacturing method of semiconductor strain gauge type pressure senser chip

Info

Publication number
JPS5522838A
JPS5522838A JP9545978A JP9545978A JPS5522838A JP S5522838 A JPS5522838 A JP S5522838A JP 9545978 A JP9545978 A JP 9545978A JP 9545978 A JP9545978 A JP 9545978A JP S5522838 A JPS5522838 A JP S5522838A
Authority
JP
Japan
Prior art keywords
diaphragm
silicon wafer
bonding process
chip
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9545978A
Other languages
Japanese (ja)
Inventor
Kiyomitsu Suzuki
Motohisa Nishihara
Hiroji Kawakami
Shigeyuki Kobori
Komei Yatsuno
Minoru Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP9545978A priority Critical patent/JPS5522838A/en
Publication of JPS5522838A publication Critical patent/JPS5522838A/en
Pending legal-status Critical Current

Links

Landscapes

  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)

Abstract

PURPOSE: To raise a mass productivity and stabilize a quality by cutting the intermediate portion of an adjacent diaphragm after bonding a sup port member having a thermal expansion coefficient similar to that of a silicon wafer by an anode bonding process to the side face of the silicon wafer comprising a multiplicity of diaphragms.
CONSTITUTION: A multiplicity of strain gauges is formed by a difusion on the side face of a silicon wafer 6, a pressure sensitive diaphragm chamber 5 is provided by an etching on the back face, and a thin film portion produced is used for a diaphragm 1. Successively, a support member 7 having a through-hole 8 of a predetermined size is provided in a position corresponding to the diaphragm chamber 5 and the wafer 6 and member 7 are bonded together by utilizing a non-organic adhesive or the anode bonding process while aligning the diaphragm chamber 5 to the through hole 8. If a borosilicate glass is used for the member 7, the anode bonding process should be adoped. Thereafter, the intermediate portion of the adjacent diaphragm is cut down by a laser or a wire saw to obtain a bellet 20.
COPYRIGHT: (C)1980,JPO&Japio
JP9545978A 1978-08-07 1978-08-07 Manufacturing method of semiconductor strain gauge type pressure senser chip Pending JPS5522838A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9545978A JPS5522838A (en) 1978-08-07 1978-08-07 Manufacturing method of semiconductor strain gauge type pressure senser chip

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9545978A JPS5522838A (en) 1978-08-07 1978-08-07 Manufacturing method of semiconductor strain gauge type pressure senser chip

Publications (1)

Publication Number Publication Date
JPS5522838A true JPS5522838A (en) 1980-02-18

Family

ID=14138251

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9545978A Pending JPS5522838A (en) 1978-08-07 1978-08-07 Manufacturing method of semiconductor strain gauge type pressure senser chip

Country Status (1)

Country Link
JP (1) JPS5522838A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6285470A (en) * 1985-10-09 1987-04-18 Hitachi Ltd Pressure sensor
JPH01172725A (en) * 1987-12-28 1989-07-07 Matsushita Electric Ind Co Ltd Semiconductor pressure sensor
JPH01172724A (en) * 1987-12-28 1989-07-07 Matsushita Electric Ind Co Ltd Semiconductor pressure sensor
JPH01503001A (en) * 1986-06-23 1989-10-12 ローズマウント　インコ Capacitor type pressure sensor and pressure sensor group
JPH03150435A (en) * 1989-11-08 1991-06-26 Masaki Esashi Manufacture of relative pressure sensor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6285470A (en) * 1985-10-09 1987-04-18 Hitachi Ltd Pressure sensor
JPH01503001A (en) * 1986-06-23 1989-10-12 ローズマウント　インコ Capacitor type pressure sensor and pressure sensor group
JPH01172725A (en) * 1987-12-28 1989-07-07 Matsushita Electric Ind Co Ltd Semiconductor pressure sensor
JPH01172724A (en) * 1987-12-28 1989-07-07 Matsushita Electric Ind Co Ltd Semiconductor pressure sensor
JPH03150435A (en) * 1989-11-08 1991-06-26 Masaki Esashi Manufacture of relative pressure sensor

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