JPS56124232A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56124232A
JPS56124232A JP2753880A JP2753880A JPS56124232A JP S56124232 A JPS56124232 A JP S56124232A JP 2753880 A JP2753880 A JP 2753880A JP 2753880 A JP2753880 A JP 2753880A JP S56124232 A JPS56124232 A JP S56124232A
Authority
JP
Japan
Prior art keywords
film
si3n4
electrode
substrate
sio2
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2753880A
Other languages
Japanese (ja)
Other versions
JPS6226574B2 (en
Inventor
Yasumi Hamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP2753880A priority Critical patent/JPS56124232A/en
Publication of JPS56124232A publication Critical patent/JPS56124232A/en
Publication of JPS6226574B2 publication Critical patent/JPS6226574B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To improve the adhesive strength in subject semiconductor device by a method wherein an electrode window is formed on the SiO2 film of an Si substrate, silicon platinum is provided thereon, covered by an Si3N4 film, an excessive Si3N4 film is removed by changing it into a formation film and a polyphase electrode is provided. CONSTITUTION:On the SiO2 film 14 on the Si substrate having a base 12 and an emitter 13, a window is selectively provided, a Pt is coated and a heat treatment is performed in an Ar, the excessive Pt on the SiO2 film 14 is removed by aqua regia and a silicic platinum layer 15 is formed. Then, the Si3N4 film 16 is grown in vapor-phase, the negative is given to the front side of the substrate 11 and the positive to the reverse side, an inverse bias of approximately 130V and 100mA is given for fifty minutes, and the Si3N4 film 16 on the layer 15 is changed into a formation film 17. This film is hard, difficult to be transformed and no warping is generated. The formation film is removed by a fluoric acid solution and a Ti-Pt-Au polyphase electrode 18 is formed on the clean Si3N4 film 16. Through this constitution, the polyphase electrode of a high yield rate and an excellent adhesive property can be obtained.
JP2753880A 1980-03-05 1980-03-05 Manufacture of semiconductor device Granted JPS56124232A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2753880A JPS56124232A (en) 1980-03-05 1980-03-05 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2753880A JPS56124232A (en) 1980-03-05 1980-03-05 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS56124232A true JPS56124232A (en) 1981-09-29
JPS6226574B2 JPS6226574B2 (en) 1987-06-09

Family

ID=12223863

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2753880A Granted JPS56124232A (en) 1980-03-05 1980-03-05 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56124232A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2579826A1 (en) * 1985-03-26 1986-10-03 Radiotechnique Compelec PROCESS FOR PRODUCING METAL CONTACTS OF A TRANSISTOR, AND TRANSISTOR THUS OBTAINED

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2579826A1 (en) * 1985-03-26 1986-10-03 Radiotechnique Compelec PROCESS FOR PRODUCING METAL CONTACTS OF A TRANSISTOR, AND TRANSISTOR THUS OBTAINED

Also Published As

Publication number Publication date
JPS6226574B2 (en) 1987-06-09

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