JPS56101770A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS56101770A
JPS56101770A JP488380A JP488380A JPS56101770A JP S56101770 A JPS56101770 A JP S56101770A JP 488380 A JP488380 A JP 488380A JP 488380 A JP488380 A JP 488380A JP S56101770 A JPS56101770 A JP S56101770A
Authority
JP
Japan
Prior art keywords
drain
transistor
base
type
type region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP488380A
Other languages
Japanese (ja)
Other versions
JPS5835371B2 (en
Inventor
Eisuke Ichinohe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP55004883A priority Critical patent/JPS5835371B2/en
Publication of JPS56101770A publication Critical patent/JPS56101770A/en
Publication of JPS5835371B2 publication Critical patent/JPS5835371B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
    • H01L27/0716—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with vertical bipolar transistors and diodes, or capacitors, or resistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To increase the discharge capability of a column wire and processing speed by a construction wherein, by providing a reverse-conductive-type region within the drain of an MOS memory store such as those for use in large capacity ROM's, a bypolar transistor with this region, drain and substrate are prepared. CONSTITUTION:For instance, MOSROM polySi-gates 141, 142 are provided on a P type Si substrate 101, and an N type source 121, a drain 122 are formed, using the above gates as masks. Simultaneously providing a P type region 110 in the drain, a bypolar transistor is constructed with the use of the P type region as an emitter, the drain 122 as a base and the base as a collector. A memory element M6 is turned on according to the selection of solder wire R6 so that a current ib is made to flow into the base of a bypolar transistor Q6. By this is meant that the electric charge of a line parasitic capacity C6 amplified by the transistor Q6 is discharged as an emitter current ie via the column wire S6. By so doing, time required for discharging can be shortened, thus making possible the manufacture of a high speed semiconductor memory.
JP55004883A 1980-01-18 1980-01-18 semiconductor storage device Expired JPS5835371B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55004883A JPS5835371B2 (en) 1980-01-18 1980-01-18 semiconductor storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55004883A JPS5835371B2 (en) 1980-01-18 1980-01-18 semiconductor storage device

Publications (2)

Publication Number Publication Date
JPS56101770A true JPS56101770A (en) 1981-08-14
JPS5835371B2 JPS5835371B2 (en) 1983-08-02

Family

ID=11596069

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55004883A Expired JPS5835371B2 (en) 1980-01-18 1980-01-18 semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS5835371B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5974666A (en) * 1982-10-20 1984-04-27 Ricoh Co Ltd Memory element
US4868628A (en) * 1984-08-22 1989-09-19 Signetics Corporation CMOS RAM with merged bipolar transistor
EP0383341A2 (en) * 1989-02-16 1990-08-22 Kabushiki Kaisha Toshiba Mosfet input type bimos ic device
US5247200A (en) * 1989-02-16 1993-09-21 Kabushiki Kaisha Toshiba MOSFET input type BiMOS IC device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0484990A (en) * 1990-07-30 1992-03-18 Miyamoto Kk Housing for machine sewing thread
JPH0521875U (en) * 1991-09-05 1993-03-23 株式会社品田ミシン商会 Sewing thread disorder prevention device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5974666A (en) * 1982-10-20 1984-04-27 Ricoh Co Ltd Memory element
US4868628A (en) * 1984-08-22 1989-09-19 Signetics Corporation CMOS RAM with merged bipolar transistor
EP0383341A2 (en) * 1989-02-16 1990-08-22 Kabushiki Kaisha Toshiba Mosfet input type bimos ic device
US5247200A (en) * 1989-02-16 1993-09-21 Kabushiki Kaisha Toshiba MOSFET input type BiMOS IC device

Also Published As

Publication number Publication date
JPS5835371B2 (en) 1983-08-02

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