JPS52103970A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS52103970A
JPS52103970A JP2074976A JP2074976A JPS52103970A JP S52103970 A JPS52103970 A JP S52103970A JP 2074976 A JP2074976 A JP 2074976A JP 2074976 A JP2074976 A JP 2074976A JP S52103970 A JPS52103970 A JP S52103970A
Authority
JP
Japan
Prior art keywords
collector
area
semiconductor device
resistance
heighten
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2074976A
Other languages
Japanese (ja)
Other versions
JPS608629B2 (en
Inventor
Kazutoshi Kamibayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP2074976A priority Critical patent/JPS608629B2/en
Publication of JPS52103970A publication Critical patent/JPS52103970A/en
Publication of JPS608629B2 publication Critical patent/JPS608629B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE: To decrease the saturation resistance and to lessen the parasitic capacity between the collector and the base and to heighten the reverse resistance and to increase switching speed in the triple diffusion type transistor, by making it less in its impurity density for the area which is situated near to the collector junction in the collector area.
COPYRIGHT: (C)1977,JPO&Japio
JP2074976A 1976-02-26 1976-02-26 semiconductor equipment Expired JPS608629B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2074976A JPS608629B2 (en) 1976-02-26 1976-02-26 semiconductor equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2074976A JPS608629B2 (en) 1976-02-26 1976-02-26 semiconductor equipment

Publications (2)

Publication Number Publication Date
JPS52103970A true JPS52103970A (en) 1977-08-31
JPS608629B2 JPS608629B2 (en) 1985-03-04

Family

ID=12035826

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2074976A Expired JPS608629B2 (en) 1976-02-26 1976-02-26 semiconductor equipment

Country Status (1)

Country Link
JP (1) JPS608629B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62262459A (en) * 1986-05-09 1987-11-14 Fujitsu Ltd Manufacture of semiconductor device
JPH01194364A (en) * 1988-01-28 1989-08-04 Nec Corp Longitudinal type high dielectric strength semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0540615Y2 (en) * 1988-04-01 1993-10-14

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62262459A (en) * 1986-05-09 1987-11-14 Fujitsu Ltd Manufacture of semiconductor device
JPH01194364A (en) * 1988-01-28 1989-08-04 Nec Corp Longitudinal type high dielectric strength semiconductor device

Also Published As

Publication number Publication date
JPS608629B2 (en) 1985-03-04

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