JPS52103970A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS52103970A JPS52103970A JP2074976A JP2074976A JPS52103970A JP S52103970 A JPS52103970 A JP S52103970A JP 2074976 A JP2074976 A JP 2074976A JP 2074976 A JP2074976 A JP 2074976A JP S52103970 A JPS52103970 A JP S52103970A
- Authority
- JP
- Japan
- Prior art keywords
- collector
- area
- semiconductor device
- resistance
- heighten
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE: To decrease the saturation resistance and to lessen the parasitic capacity between the collector and the base and to heighten the reverse resistance and to increase switching speed in the triple diffusion type transistor, by making it less in its impurity density for the area which is situated near to the collector junction in the collector area.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2074976A JPS608629B2 (en) | 1976-02-26 | 1976-02-26 | semiconductor equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2074976A JPS608629B2 (en) | 1976-02-26 | 1976-02-26 | semiconductor equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS52103970A true JPS52103970A (en) | 1977-08-31 |
JPS608629B2 JPS608629B2 (en) | 1985-03-04 |
Family
ID=12035826
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2074976A Expired JPS608629B2 (en) | 1976-02-26 | 1976-02-26 | semiconductor equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS608629B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62262459A (en) * | 1986-05-09 | 1987-11-14 | Fujitsu Ltd | Manufacture of semiconductor device |
JPH01194364A (en) * | 1988-01-28 | 1989-08-04 | Nec Corp | Longitudinal type high dielectric strength semiconductor device |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0540615Y2 (en) * | 1988-04-01 | 1993-10-14 |
-
1976
- 1976-02-26 JP JP2074976A patent/JPS608629B2/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62262459A (en) * | 1986-05-09 | 1987-11-14 | Fujitsu Ltd | Manufacture of semiconductor device |
JPH01194364A (en) * | 1988-01-28 | 1989-08-04 | Nec Corp | Longitudinal type high dielectric strength semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS608629B2 (en) | 1985-03-04 |
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