JPS56101752A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56101752A
JPS56101752A JP495180A JP495180A JPS56101752A JP S56101752 A JPS56101752 A JP S56101752A JP 495180 A JP495180 A JP 495180A JP 495180 A JP495180 A JP 495180A JP S56101752 A JPS56101752 A JP S56101752A
Authority
JP
Japan
Prior art keywords
semiconductor device
main electrode
plate
metal
metal plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP495180A
Other languages
Japanese (ja)
Other versions
JPS617735B2 (en
Inventor
Kazuo Ueda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP495180A priority Critical patent/JPS56101752A/en
Publication of JPS56101752A publication Critical patent/JPS56101752A/en
Publication of JPS617735B2 publication Critical patent/JPS617735B2/ja
Granted legal-status Critical Current

Links

Classifications

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Abstract

PURPOSE:To increase the current capacity of the semiconductor device by soldering a metal plate having a predetermined thickness and coated with a metal plating on the surface to at least one main electrode of a semiconductor pellet and bonding an aluminum lead wire to the metal plate by ultrasonic wave. CONSTITUTION:The metal plate 11 having a thickness of more than 300mum and plated with nickel for gloss on the surface and formed of copper or the like is soldered with a high temperature brazing metal 7a onto the main electrode 5a of the semiconductor pellet 1 formed on the ceramic substrate 9 through a heat sink plate 6, and the aluminum lead wire 3 is bonded by ultrasonic wave onto the plate 11. Thus, when the semiconductor device becomes ON state, no hot spot nor crack occurs on the main electrode and the semiconductor device having large and sufficient current capacity with a simple structure can be obtained.
JP495180A 1980-01-18 1980-01-18 Semiconductor device Granted JPS56101752A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP495180A JPS56101752A (en) 1980-01-18 1980-01-18 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP495180A JPS56101752A (en) 1980-01-18 1980-01-18 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS56101752A true JPS56101752A (en) 1981-08-14
JPS617735B2 JPS617735B2 (en) 1986-03-08

Family

ID=11597874

Family Applications (1)

Application Number Title Priority Date Filing Date
JP495180A Granted JPS56101752A (en) 1980-01-18 1980-01-18 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56101752A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013053420A1 (en) * 2011-10-15 2013-04-18 Danfoss Silicon Power Gmbh Power semi-conductor chip with a metal moulded body for contacting thick wires or strips, and method for the production thereof
WO2013053419A1 (en) * 2011-10-15 2013-04-18 Danfoss Silicon Power Gmbh Method for providing a connection between metal moulded bodies and a power semi-conductor which is used to join thick wires or strips
US10607962B2 (en) 2015-08-14 2020-03-31 Danfoss Silicon Power Gmbh Method for manufacturing semiconductor chips

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013053420A1 (en) * 2011-10-15 2013-04-18 Danfoss Silicon Power Gmbh Power semi-conductor chip with a metal moulded body for contacting thick wires or strips, and method for the production thereof
WO2013053419A1 (en) * 2011-10-15 2013-04-18 Danfoss Silicon Power Gmbh Method for providing a connection between metal moulded bodies and a power semi-conductor which is used to join thick wires or strips
JP2014532308A (en) * 2011-10-15 2014-12-04 ダンフォス・シリコン・パワー・ゲーエムベーハー Power semiconductor chip provided with metal molded body for contacting large-diameter wire or strip and method for manufacturing the same
US9318421B2 (en) 2011-10-15 2016-04-19 Danfoss Silicon Power Gmbh Power semiconductor chip with a metallic moulded body for contacting thick wires or strips and method for the production thereof
US9786627B2 (en) 2011-10-15 2017-10-10 Danfoss Silicon Power Gmbh Method for creating a connection between metallic moulded bodies and a power semiconductor which is used to bond to thick wires or strips
US10607962B2 (en) 2015-08-14 2020-03-31 Danfoss Silicon Power Gmbh Method for manufacturing semiconductor chips

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