JPS56100486A - Photoelectric conversion element - Google Patents

Photoelectric conversion element

Info

Publication number
JPS56100486A
JPS56100486A JP290280A JP290280A JPS56100486A JP S56100486 A JPS56100486 A JP S56100486A JP 290280 A JP290280 A JP 290280A JP 290280 A JP290280 A JP 290280A JP S56100486 A JPS56100486 A JP S56100486A
Authority
JP
Japan
Prior art keywords
layer
substrate
conductive
photoelectric conversion
contain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP290280A
Other languages
Japanese (ja)
Inventor
Akio Azuma
Kazuhiro Kawajiri
Yuzo Mizobuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Holdings Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Priority to JP290280A priority Critical patent/JPS56100486A/en
Publication of JPS56100486A publication Critical patent/JPS56100486A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/07—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the Schottky type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To obtain the photoelectric conversion element having little localized level density by forming an amorphous thin active layer containing Si and C of prescribed composition and being made to contain H2 and F on a conductive layer provided on a substrate, through the intermediary of an ohmic contact layer with high density of impurities. CONSTITUTION:On the layer 203 of a conductive substrate 201 composed of a substrate 202 and a conductive layer 203, a semiconductor active layer 205 is formed of amorphous material. This active layer 205 is constituted, from the side of the layer 203, by an N<+> type semiconductor layer 206 for attaining excellent ohmic contact with the layer 203 and by a photoabsorbing layer 207 of nondope or doped in N type. The layer 207 is prepared from a material containing C of 5- 100atomic% in relation to 1 of the amount of Si and made to contain H2 and F and has the thickness allowing a vacant layer to expand to the whole. After that, a thin metal layer 208 forming Schottky Barrier is connected to the layer 207, and on the layer 208 a comb-shaped or other electrode 209 is provided and the whole surface of the element is covered with a reflection preventing layer 212.
JP290280A 1980-01-14 1980-01-14 Photoelectric conversion element Pending JPS56100486A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP290280A JPS56100486A (en) 1980-01-14 1980-01-14 Photoelectric conversion element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP290280A JPS56100486A (en) 1980-01-14 1980-01-14 Photoelectric conversion element

Publications (1)

Publication Number Publication Date
JPS56100486A true JPS56100486A (en) 1981-08-12

Family

ID=11542279

Family Applications (1)

Application Number Title Priority Date Filing Date
JP290280A Pending JPS56100486A (en) 1980-01-14 1980-01-14 Photoelectric conversion element

Country Status (1)

Country Link
JP (1) JPS56100486A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58128778A (en) * 1982-01-28 1983-08-01 Seiko Epson Corp Semiconductor device
JPS5954276A (en) * 1982-09-22 1984-03-29 Sanyo Electric Co Ltd Photovoltaic device
JPS5954274A (en) * 1982-09-22 1984-03-29 Sanyo Electric Co Ltd Photovoltaic device
JPS59115572A (en) * 1982-12-23 1984-07-04 Toshiba Corp Photovoltaic device
JPS59150485A (en) * 1983-02-16 1984-08-28 Semiconductor Energy Lab Co Ltd Photoelectric conversion semiconductor device
JPS6046078A (en) * 1983-08-23 1985-03-12 Daihen Corp Photovoltaic element and manufacture thereof
JPS6188571A (en) * 1984-10-05 1986-05-06 Kanegafuchi Chem Ind Co Ltd Photodetector
JPS62169372A (en) * 1987-01-09 1987-07-25 Matsushita Electric Ind Co Ltd Manufacture of semiconductor element

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5513938A (en) * 1978-07-17 1980-01-31 Shunpei Yamazaki Photoelectronic conversion semiconductor device and its manufacturing method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5513938A (en) * 1978-07-17 1980-01-31 Shunpei Yamazaki Photoelectronic conversion semiconductor device and its manufacturing method

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58128778A (en) * 1982-01-28 1983-08-01 Seiko Epson Corp Semiconductor device
JPS5954276A (en) * 1982-09-22 1984-03-29 Sanyo Electric Co Ltd Photovoltaic device
JPS5954274A (en) * 1982-09-22 1984-03-29 Sanyo Electric Co Ltd Photovoltaic device
JPS59115572A (en) * 1982-12-23 1984-07-04 Toshiba Corp Photovoltaic device
JPS59150485A (en) * 1983-02-16 1984-08-28 Semiconductor Energy Lab Co Ltd Photoelectric conversion semiconductor device
JPS6046078A (en) * 1983-08-23 1985-03-12 Daihen Corp Photovoltaic element and manufacture thereof
JPS6188571A (en) * 1984-10-05 1986-05-06 Kanegafuchi Chem Ind Co Ltd Photodetector
JPS62169372A (en) * 1987-01-09 1987-07-25 Matsushita Electric Ind Co Ltd Manufacture of semiconductor element

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