JPS5548979A - Manufacturing method of solar cell - Google Patents
Manufacturing method of solar cellInfo
- Publication number
- JPS5548979A JPS5548979A JP12220978A JP12220978A JPS5548979A JP S5548979 A JPS5548979 A JP S5548979A JP 12220978 A JP12220978 A JP 12220978A JP 12220978 A JP12220978 A JP 12220978A JP S5548979 A JPS5548979 A JP S5548979A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- resistance
- amorphous
- low
- solar cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Photovoltaic Devices (AREA)
Abstract
PURPOSE: To prevent the generation of a series resistance from increasing, by forming an acid-resisting metallic pipe on the surface of the side, on which a amorphous Si layer of a low-resistance substrate electrode is formed, so that an oxide is formed on the interface between the base board electrode and the amorphous Si layer.
CONSTITUTION: Layers 8 of Cr and Al are piled on a glass plate 7, and a Pt and a low-resistance Si containing a high concentration of P are thermally attached. The Si layer may be of either amorphous or multi-crystal. At this time, by being heat-treated at a temperature between 400°C and 900°C, a uniform silicified platinum layer 9 and a residual Si layer 2a are formed. An n-type high-resistance amorphous Si 3, a schottky barrier metal 4, an electrtode 5 and reflection preventing film 6 are formed on the layer 2a by glow-discharge using SiH4. As the layer 9 is capable of preventing a reaction between a metallic layer, such as Al, etc. and the low- resistance Si layer 2a and stabilized against high temperature, a good ohmic contact can be maintained between the layer 2a and the layer 8, a low resistance of the layer 2a can be satisfactorily maintained, and series resistance of a solar cell can be lowered.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12220978A JPS5548979A (en) | 1978-10-03 | 1978-10-03 | Manufacturing method of solar cell |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12220978A JPS5548979A (en) | 1978-10-03 | 1978-10-03 | Manufacturing method of solar cell |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5548979A true JPS5548979A (en) | 1980-04-08 |
Family
ID=14830242
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12220978A Pending JPS5548979A (en) | 1978-10-03 | 1978-10-03 | Manufacturing method of solar cell |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5548979A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5721875A (en) * | 1980-07-14 | 1982-02-04 | Canon Inc | Photosensor |
DE3135007A1 (en) * | 1981-09-04 | 1983-03-24 | Licentia Gmbh | Multi-layer contact for a semiconductor arrangement |
DE3242831A1 (en) * | 1982-11-19 | 1984-05-24 | Siemens AG, 1000 Berlin und 8000 München | AMORPHOUS SILICON SOLAR CELL AND METHOD FOR THEIR PRODUCTION |
-
1978
- 1978-10-03 JP JP12220978A patent/JPS5548979A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5721875A (en) * | 1980-07-14 | 1982-02-04 | Canon Inc | Photosensor |
JPS6322074B2 (en) * | 1980-07-14 | 1988-05-10 | Canon Kk | |
DE3135007A1 (en) * | 1981-09-04 | 1983-03-24 | Licentia Gmbh | Multi-layer contact for a semiconductor arrangement |
DE3242831A1 (en) * | 1982-11-19 | 1984-05-24 | Siemens AG, 1000 Berlin und 8000 München | AMORPHOUS SILICON SOLAR CELL AND METHOD FOR THEIR PRODUCTION |
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