JPS5578576A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5578576A
JPS5578576A JP15254078A JP15254078A JPS5578576A JP S5578576 A JPS5578576 A JP S5578576A JP 15254078 A JP15254078 A JP 15254078A JP 15254078 A JP15254078 A JP 15254078A JP S5578576 A JPS5578576 A JP S5578576A
Authority
JP
Japan
Prior art keywords
transistor
input
protected
semiconductor element
input terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15254078A
Other languages
Japanese (ja)
Inventor
Mikio Koike
Takao Jinriyou
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP15254078A priority Critical patent/JPS5578576A/en
Publication of JPS5578576A publication Critical patent/JPS5578576A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To reduce the occupying area and to increase the strength against breakdown by using a low-threshold value non-volatile transistor in a device wherein input to a semiconductor element is protected by another semiconductor element. CONSTITUTION:A transistor 10 to be protected is connected to an input terminal 8 by way of an input resistor 9, and a control electrode 6 of a non-volatile transistor 11 is also connected to the input terminal 8. A drain electrode 3 of the transistor 11 is connected to a connecting point A3 between said input resistor 9 and transistor 10; and a source electrode 2 and a substrate are grounded.
JP15254078A 1978-12-08 1978-12-08 Semiconductor device Pending JPS5578576A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15254078A JPS5578576A (en) 1978-12-08 1978-12-08 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15254078A JPS5578576A (en) 1978-12-08 1978-12-08 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5578576A true JPS5578576A (en) 1980-06-13

Family

ID=15542675

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15254078A Pending JPS5578576A (en) 1978-12-08 1978-12-08 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5578576A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5624977A (en) * 1979-08-09 1981-03-10 Nec Corp Semiconductor device
JPS57180169A (en) * 1981-04-30 1982-11-06 Nec Corp Insulating gate type protective device
EP0470371A2 (en) * 1990-07-06 1992-02-12 Kabushiki Kaisha Toshiba Semiconductor device with input protection circuit of high withstand voltage

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5132511A (en) * 1974-09-10 1976-03-19 Kuraray Co Ritsutaikiseisareta geraniruaseton no seizohoho
JPS53126567A (en) * 1977-04-13 1978-11-04 Hitachi Ltd Package type heat insulation

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5132511A (en) * 1974-09-10 1976-03-19 Kuraray Co Ritsutaikiseisareta geraniruaseton no seizohoho
JPS53126567A (en) * 1977-04-13 1978-11-04 Hitachi Ltd Package type heat insulation

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5624977A (en) * 1979-08-09 1981-03-10 Nec Corp Semiconductor device
JPS57180169A (en) * 1981-04-30 1982-11-06 Nec Corp Insulating gate type protective device
JPH0158670B2 (en) * 1981-04-30 1989-12-13 Nippon Electric Co
EP0470371A2 (en) * 1990-07-06 1992-02-12 Kabushiki Kaisha Toshiba Semiconductor device with input protection circuit of high withstand voltage

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