JPS5624977A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5624977A
JPS5624977A JP10170779A JP10170779A JPS5624977A JP S5624977 A JPS5624977 A JP S5624977A JP 10170779 A JP10170779 A JP 10170779A JP 10170779 A JP10170779 A JP 10170779A JP S5624977 A JPS5624977 A JP S5624977A
Authority
JP
Japan
Prior art keywords
threshold value
inputted
input circuit
level signal
nonvolatile
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10170779A
Other languages
Japanese (ja)
Other versions
JPS6412109B2 (en
Inventor
Mikio Koike
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP10170779A priority Critical patent/JPS5624977A/en
Publication of JPS5624977A publication Critical patent/JPS5624977A/en
Publication of JPS6412109B2 publication Critical patent/JPS6412109B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To easily detect whether a semiconductor device is being used or not by interconnecting an input circuit using a nonvolatile element capable of varying the threshold value to sufficiently high value althrough lower than the threshold value of the input circuit thereof at the time of normally closing the FET, with the ground. CONSTITUTION:An input terminal 8 is connected through a resistor 9 to the gate of the FET13 of an input circuit 10, and a substrate 1 and a source 2 are connected through a resistor 9 to the drain 3 and the gate 7 of a nonvolatile semiconductor element, and are normally closed initially. Since the nonvolatile element is at low threshold value even if a high level signal is inputted thereto at the time of initial use, it is immediately conducted to become the same as the low level signal is inputted thereto. When the device is reversely activated, a high voltage pulse is inputted to the terminal 8, the nonvolatile element is set at sufficiently high threshold value as compared with the threshold value of the input circuit 10, a high level signal is inputted directly to the FET13 to normally operate the circuit 10. Since there is no means of returning the high threshold value to a low threshold value, the use of the device can be distinguished.
JP10170779A 1979-08-09 1979-08-09 Semiconductor device Granted JPS5624977A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10170779A JPS5624977A (en) 1979-08-09 1979-08-09 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10170779A JPS5624977A (en) 1979-08-09 1979-08-09 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5624977A true JPS5624977A (en) 1981-03-10
JPS6412109B2 JPS6412109B2 (en) 1989-02-28

Family

ID=14307772

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10170779A Granted JPS5624977A (en) 1979-08-09 1979-08-09 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5624977A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8765064B2 (en) 2009-07-30 2014-07-01 Panasonic Healthcare Co., Ltd. Sterile substance supplying apparatus

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53126567U (en) * 1977-03-15 1978-10-07
JPS5578576A (en) * 1978-12-08 1980-06-13 Nec Corp Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53126567U (en) * 1977-03-15 1978-10-07
JPS5578576A (en) * 1978-12-08 1980-06-13 Nec Corp Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8765064B2 (en) 2009-07-30 2014-07-01 Panasonic Healthcare Co., Ltd. Sterile substance supplying apparatus

Also Published As

Publication number Publication date
JPS6412109B2 (en) 1989-02-28

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