JPS54149479A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS54149479A
JPS54149479A JP5860778A JP5860778A JPS54149479A JP S54149479 A JPS54149479 A JP S54149479A JP 5860778 A JP5860778 A JP 5860778A JP 5860778 A JP5860778 A JP 5860778A JP S54149479 A JPS54149479 A JP S54149479A
Authority
JP
Japan
Prior art keywords
pad
insulating film
semiconductor device
gate
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5860778A
Other languages
Japanese (ja)
Inventor
Kenji Tokuyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP5860778A priority Critical patent/JPS54149479A/en
Publication of JPS54149479A publication Critical patent/JPS54149479A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain a semiconductor device having a stable high resistance to protect the semiconductor device from destruction dependent upon static electricity of the gate insulating film of an I/O transistor, etc. CONSTITUTION:Metallic pad 1 connected to gate G of MIS transistor Q1 and metallic pad 21 connected to source S by aperture 20 are provided on field insulating film 5 on the semiconductor substrate. Meanwhile, diffusion regions 3 and 22 connected to the ground potential are provided on the substrate and are connected to ground wiring 2 in apertures 4 and 23 respectively. Here, metallic ions are injected to the surface of parts of field insulating film 5 extending from the lower part of pad 1 onto region 3 and extending from the lower part of pad 21 onto region 22, and these parts are converted to high resistances R1' and R2' respectively. Then, drain D of transistor Q1 is connected to ground wiring 2 through a resistance similar to resistances R1' and R2' similarly to gate G and source S.
JP5860778A 1978-05-16 1978-05-16 Semiconductor device Pending JPS54149479A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5860778A JPS54149479A (en) 1978-05-16 1978-05-16 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5860778A JPS54149479A (en) 1978-05-16 1978-05-16 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS54149479A true JPS54149479A (en) 1979-11-22

Family

ID=13089203

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5860778A Pending JPS54149479A (en) 1978-05-16 1978-05-16 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS54149479A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6068695A (en) * 1983-09-26 1985-04-19 富士通株式会社 Shelf for printed board
US4688065A (en) * 1982-11-11 1987-08-18 Tokyo Shibaura Denki Kabushiki Kaisha MOS type semiconductor device
JPH029451U (en) * 1988-06-30 1990-01-22

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4688065A (en) * 1982-11-11 1987-08-18 Tokyo Shibaura Denki Kabushiki Kaisha MOS type semiconductor device
JPS6068695A (en) * 1983-09-26 1985-04-19 富士通株式会社 Shelf for printed board
JPH0213959B2 (en) * 1983-09-26 1990-04-05 Fujitsu Ltd
JPH029451U (en) * 1988-06-30 1990-01-22

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