JPS54148493A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS54148493A
JPS54148493A JP5782778A JP5782778A JPS54148493A JP S54148493 A JPS54148493 A JP S54148493A JP 5782778 A JP5782778 A JP 5782778A JP 5782778 A JP5782778 A JP 5782778A JP S54148493 A JPS54148493 A JP S54148493A
Authority
JP
Japan
Prior art keywords
region
type
diffusion
layer
mos transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5782778A
Other languages
Japanese (ja)
Inventor
Seiji Kimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP5782778A priority Critical patent/JPS54148493A/en
Publication of JPS54148493A publication Critical patent/JPS54148493A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To prevent occurrence of the parasitic MOS transistor by giving connection within the semiconductor substrate and via the burried diffusion layer between the source or drain of the MOS transistor and the circuit element or contact part of the MOS transistor.
CONSTITUTION: N+-type burried region 3 to become part of the inner wiring is formed by diffusion to the P-type Si substrate to give the electric connection between circuit elements, and P-type layer 2 is grown by epitaxial method on the entire surface including region 3. Then N+-type source region 4 plus N+-type drain region 41 reaching region 3 are formed by diffusion within layer 2, and layer 2 enclosed by region 4 and 41 is used as the gate region. Furthermore, N+-type contact region 42 reaching also region 3 is formed by diffusion with isolation secured to region 41, and SiO2 film 6 is coated on the entire surface. And film 6 between region 3 and 4 is used as the gate insulator film. After this, electrode 5 is coated to each region, and region 3 is used as the conductor to connect region 41 and 42.
COPYRIGHT: (C)1979,JPO&Japio
JP5782778A 1978-05-15 1978-05-15 Semiconductor device Pending JPS54148493A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5782778A JPS54148493A (en) 1978-05-15 1978-05-15 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5782778A JPS54148493A (en) 1978-05-15 1978-05-15 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS54148493A true JPS54148493A (en) 1979-11-20

Family

ID=13066748

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5782778A Pending JPS54148493A (en) 1978-05-15 1978-05-15 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS54148493A (en)

Similar Documents

Publication Publication Date Title
JPS5623771A (en) Semiconductor memory
JPS56125868A (en) Thin-film semiconductor device
JPS54161894A (en) Manufacture of semiconductor device
JPS56110264A (en) High withstand voltage mos transistor
JPS5559759A (en) Semiconductor device
JPS5691470A (en) Semiconductor
JPS54148493A (en) Semiconductor device
JPS54136275A (en) Field effect transistor of isolation gate
JPS55107229A (en) Method of manufacturing semiconductor device
JPS5575238A (en) Method of fabricating semiconductor device
JPS6489457A (en) Manufacture of semiconductor device
JPS54109761A (en) Manufacture of semiconductor device
JPS54102980A (en) Mos-type semiconductor device and its manufacture
JPS6457671A (en) Semiconductor device and manufacture thereof
JPS5513944A (en) C-mos semiconductor device
JPS54143076A (en) Semiconductor device and its manufacture
JPS5574181A (en) Preparing junction type field effect transistor
JPS55108771A (en) Semiconductor device
JPS54154979A (en) Manufacture of insulated gate type semiconductor device
JPS5550661A (en) Insulated gate type field effect semiconductor device
JPS56111257A (en) Preparation of insulated gate type semiconductor ic device
JPS54121081A (en) Integrated circuit device
JPS5739579A (en) Mos semiconductor device and manufacture thereof
JPS54100270A (en) Semiconductor device
JPS55127052A (en) Field effect semiconductor device