JPS54148493A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS54148493A JPS54148493A JP5782778A JP5782778A JPS54148493A JP S54148493 A JPS54148493 A JP S54148493A JP 5782778 A JP5782778 A JP 5782778A JP 5782778 A JP5782778 A JP 5782778A JP S54148493 A JPS54148493 A JP S54148493A
- Authority
- JP
- Japan
- Prior art keywords
- region
- type
- diffusion
- layer
- mos transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE: To prevent occurrence of the parasitic MOS transistor by giving connection within the semiconductor substrate and via the burried diffusion layer between the source or drain of the MOS transistor and the circuit element or contact part of the MOS transistor.
CONSTITUTION: N+-type burried region 3 to become part of the inner wiring is formed by diffusion to the P-type Si substrate to give the electric connection between circuit elements, and P-type layer 2 is grown by epitaxial method on the entire surface including region 3. Then N+-type source region 4 plus N+-type drain region 41 reaching region 3 are formed by diffusion within layer 2, and layer 2 enclosed by region 4 and 41 is used as the gate region. Furthermore, N+-type contact region 42 reaching also region 3 is formed by diffusion with isolation secured to region 41, and SiO2 film 6 is coated on the entire surface. And film 6 between region 3 and 4 is used as the gate insulator film. After this, electrode 5 is coated to each region, and region 3 is used as the conductor to connect region 41 and 42.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5782778A JPS54148493A (en) | 1978-05-15 | 1978-05-15 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5782778A JPS54148493A (en) | 1978-05-15 | 1978-05-15 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54148493A true JPS54148493A (en) | 1979-11-20 |
Family
ID=13066748
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5782778A Pending JPS54148493A (en) | 1978-05-15 | 1978-05-15 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54148493A (en) |
-
1978
- 1978-05-15 JP JP5782778A patent/JPS54148493A/en active Pending
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