GB2011713A - Integrated Darlington circuit - Google Patents
Integrated Darlington circuitInfo
- Publication number
- GB2011713A GB2011713A GB7849491A GB7849491A GB2011713A GB 2011713 A GB2011713 A GB 2011713A GB 7849491 A GB7849491 A GB 7849491A GB 7849491 A GB7849491 A GB 7849491A GB 2011713 A GB2011713 A GB 2011713A
- Authority
- GB
- United Kingdom
- Prior art keywords
- epitaxial
- base
- emitter
- schottky diode
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002184 metal Substances 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
- H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
- H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
- H01L27/0761—Vertical bipolar transistor in combination with diodes only
- H01L27/0766—Vertical bipolar transistor in combination with diodes only with Schottky diodes only
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Abstract
An integrated Darlington circuit comprises a Schottky diode (D; 35.33a) disposed in parallel with the emitter- base junction (33b/32a) of a transistor (T1). The emitter (33b, 41) base (32a, 34a, 34b) and collector (31, 30) each comprise an epitaxial portion (33b, 32a, 31) which are formed by three superimposed epitaxial layers (33, 32, 31) of alternating conductivity types (n-p-n). The Schottky diode (D) comprises a metal electrode (35) situated at the surface of the upper epitaxial layer (33) of which another portion (33b) forms the epitaxial portion of the emitter (33b, 41) of the transistor (T1). This Schottky electrode (35) is connected to the transistor emitter (33b, 41) by a metal layer (40). At the surface of the upper epitaxial layer (33) the base contact (39) contacts both the epitaxial portion (33a) of the Schottky diode (D) and a highly-doped base reach-through zone (34) which extends to the base epitaxial portion (32a). The arrangement permits the switching speed of a Darlington amplifier to be improved without requiring additional doping or etching steps to integrate the Schottky diode (D). <IMAGE>
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7739796A FR2413785A1 (en) | 1977-12-30 | 1977-12-30 | MONOLITHIC SEMICONDUCTOR DEVICE WITH MULTILAYER PLANE STRUCTURE, MESA TYPE, INCLUDING AT LEAST ONE TRANSISTOR ASSOCIATED WITH A SCHOTTKY DIODE |
Publications (2)
Publication Number | Publication Date |
---|---|
GB2011713A true GB2011713A (en) | 1979-07-11 |
GB2011713B GB2011713B (en) | 1982-04-28 |
Family
ID=9199556
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB7849491A Expired GB2011713B (en) | 1977-12-30 | 1978-12-21 | Integrated darlington circuit |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS54100673A (en) |
CA (1) | CA1123922A (en) |
DE (1) | DE2854995C2 (en) |
FR (1) | FR2413785A1 (en) |
GB (1) | GB2011713B (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63308957A (en) * | 1987-06-11 | 1988-12-16 | Sanyo Electric Co Ltd | Darlington transistor |
JP3549479B2 (en) * | 2000-10-16 | 2004-08-04 | 寛治 大塚 | Semiconductor integrated circuit with varactor device |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5151286A (en) * | 1974-10-31 | 1976-05-06 | Sony Corp | HANDOTA ISOCHI |
US3913213A (en) * | 1974-08-02 | 1975-10-21 | Trw Inc | Integrated circuit transistor switch |
FR2335957A1 (en) * | 1975-12-17 | 1977-07-15 | Radiotechnique Compelec | Multilayer epitaxial monolithic rectifier bridge - includes Darlington pair formed on same silicon substrate |
-
1977
- 1977-12-30 FR FR7739796A patent/FR2413785A1/en active Granted
-
1978
- 1978-12-20 DE DE19782854995 patent/DE2854995C2/en not_active Expired
- 1978-12-21 CA CA318,356A patent/CA1123922A/en not_active Expired
- 1978-12-21 GB GB7849491A patent/GB2011713B/en not_active Expired
- 1978-12-28 JP JP16133978A patent/JPS54100673A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS54100673A (en) | 1979-08-08 |
JPS6136714B2 (en) | 1986-08-20 |
FR2413785B1 (en) | 1982-11-12 |
DE2854995C2 (en) | 1985-06-20 |
DE2854995A1 (en) | 1979-07-05 |
CA1123922A (en) | 1982-05-18 |
GB2011713B (en) | 1982-04-28 |
FR2413785A1 (en) | 1979-07-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |