JPS5556643A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5556643A
JPS5556643A JP12938578A JP12938578A JPS5556643A JP S5556643 A JPS5556643 A JP S5556643A JP 12938578 A JP12938578 A JP 12938578A JP 12938578 A JP12938578 A JP 12938578A JP S5556643 A JPS5556643 A JP S5556643A
Authority
JP
Japan
Prior art keywords
layer
layers
base
heat
bipolar transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12938578A
Other languages
Japanese (ja)
Inventor
Hiroshi Iwasaki
Osamu Ozawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP12938578A priority Critical patent/JPS5556643A/en
Publication of JPS5556643A publication Critical patent/JPS5556643A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]
    • H01L27/0244—I2L structures integrated in combination with analog structures

Abstract

PURPOSE:To integrate a plurality of bipolar elements on one semiconductor substrate, by providing each element with characteristics demanded by a comparatively simple process. CONSTITUTION:An n<+> buried layer and an n epitaxial layer, which thickness differs, are formed on a p<-> Si substrate, and seprated by a p<+>-layer 4. n<+>-layers 5a, 5b are manufactured, and a p-type base 6a is prepared to a bipolar transistor portion and base p<->-layers 6b1, 6b2 for an inverter and a p-type emitter layer 6b3 for an injector to an I<2>L portion. These layers and base are each made up in necessary impurity concentration and depth by the combination of the repetition of ion injection, which is performed so that resist masks be changed, and heat-treatment time. And an n<+>-type emitter layer 7a1, a collector extracting layer 7a2 and a collector layer 7b are built up by the same treatment. Thus, ions are injected in frequency not less than twice in shapes that resist masks are altered, heat-treatment time is selected and a bipolar transistor with high resisting pressure and the I<2>L of working at high-speeds can be let coexist.
JP12938578A 1978-10-20 1978-10-20 Manufacture of semiconductor device Pending JPS5556643A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12938578A JPS5556643A (en) 1978-10-20 1978-10-20 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12938578A JPS5556643A (en) 1978-10-20 1978-10-20 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5556643A true JPS5556643A (en) 1980-04-25

Family

ID=15008261

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12938578A Pending JPS5556643A (en) 1978-10-20 1978-10-20 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5556643A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58211224A (en) * 1982-05-31 1983-12-08 Shimadzu Corp Programmable electric power source device
JPH06153564A (en) * 1992-11-02 1994-05-31 Konbi Kk Dc motor driving circuit
US5330922A (en) * 1989-09-25 1994-07-19 Texas Instruments Incorporated Semiconductor process for manufacturing semiconductor devices with increased operating voltages

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58211224A (en) * 1982-05-31 1983-12-08 Shimadzu Corp Programmable electric power source device
US5330922A (en) * 1989-09-25 1994-07-19 Texas Instruments Incorporated Semiconductor process for manufacturing semiconductor devices with increased operating voltages
US5408125A (en) * 1989-09-25 1995-04-18 Texas Instruments Incorporated Semiconductor process for manufacturing semiconductor device with increased operating voltages
JPH06153564A (en) * 1992-11-02 1994-05-31 Konbi Kk Dc motor driving circuit

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