JPS5550635A - Preparation of semiconductor device - Google Patents
Preparation of semiconductor deviceInfo
- Publication number
- JPS5550635A JPS5550635A JP12362778A JP12362778A JPS5550635A JP S5550635 A JPS5550635 A JP S5550635A JP 12362778 A JP12362778 A JP 12362778A JP 12362778 A JP12362778 A JP 12362778A JP S5550635 A JPS5550635 A JP S5550635A
- Authority
- JP
- Japan
- Prior art keywords
- film
- separation layers
- sic
- oxidation
- minute
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Local Oxidation Of Silicon (AREA)
- Element Separation (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12362778A JPS5550635A (en) | 1978-10-09 | 1978-10-09 | Preparation of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12362778A JPS5550635A (en) | 1978-10-09 | 1978-10-09 | Preparation of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5550635A true JPS5550635A (en) | 1980-04-12 |
JPS6136380B2 JPS6136380B2 (ja) | 1986-08-18 |
Family
ID=14865260
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12362778A Granted JPS5550635A (en) | 1978-10-09 | 1978-10-09 | Preparation of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5550635A (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01162351A (ja) * | 1987-12-19 | 1989-06-26 | Fujitsu Ltd | 半導体装置の製造方法 |
KR100388458B1 (ko) * | 1999-12-24 | 2003-06-25 | 주식회사 하이닉스반도체 | 트렌치 소자분리 공정을 사용하는 반도체 소자 제조방법 |
-
1978
- 1978-10-09 JP JP12362778A patent/JPS5550635A/ja active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01162351A (ja) * | 1987-12-19 | 1989-06-26 | Fujitsu Ltd | 半導体装置の製造方法 |
KR100388458B1 (ko) * | 1999-12-24 | 2003-06-25 | 주식회사 하이닉스반도체 | 트렌치 소자분리 공정을 사용하는 반도체 소자 제조방법 |
Also Published As
Publication number | Publication date |
---|---|
JPS6136380B2 (ja) | 1986-08-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5516464A (en) | Method of forming wafer for semiconductor device | |
JPS53135263A (en) | Production of semiconductor device | |
JPS5550635A (en) | Preparation of semiconductor device | |
JPS5772333A (en) | Manufacture of semiconductor device | |
JPS56103443A (en) | Production of element isolation structure for semiconductor device | |
JPS57111042A (en) | Manufacture of semiconductor device | |
JPS5317068A (en) | Semiconductor device and its production | |
JPS5779642A (en) | Manufacture of semiconductor device | |
JPS52124860A (en) | Electrode formation method for semiconductor devices | |
JPS5715423A (en) | Manufacture of semiconductor device | |
JPS5779641A (en) | Manufacture of semiconductor device | |
JPS54117690A (en) | Production of semiconductor device | |
JPS56111241A (en) | Preparation of semiconductor device | |
JPS5776865A (en) | Manufacture of semiconductor device | |
JPS54105982A (en) | Mis-type semiconductor device and its manufacture | |
JPS5513953A (en) | Complementary integrated circuit | |
JPS54162490A (en) | Manufacture of semiconductor device | |
JPS57196544A (en) | Manufacture of integrated circuit isolated by oxide film | |
JPS5470783A (en) | Forming method for separate oxide film of semiconductor device | |
JPS5379473A (en) | Manufacture of semiconductor device | |
JPS5377463A (en) | Production of semiconductor device | |
JPS5779644A (en) | Manufacture of semiconductor device | |
JPS551150A (en) | Method of fabricating semiconductor device | |
JPS5475275A (en) | Manufacture of semiconductor device | |
JPS5779643A (en) | Semiconductor device |