JPS62291533A - Pressure detector - Google Patents
Pressure detectorInfo
- Publication number
- JPS62291533A JPS62291533A JP13525886A JP13525886A JPS62291533A JP S62291533 A JPS62291533 A JP S62291533A JP 13525886 A JP13525886 A JP 13525886A JP 13525886 A JP13525886 A JP 13525886A JP S62291533 A JPS62291533 A JP S62291533A
- Authority
- JP
- Japan
- Prior art keywords
- pressure
- glass
- glass plate
- semiconductor chip
- sensing body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011521 glass Substances 0.000 claims abstract description 33
- 239000002184 metal Substances 0.000 claims abstract description 15
- 239000004065 semiconductor Substances 0.000 claims description 28
- 239000005357 flat glass Substances 0.000 claims description 13
- 238000002844 melting Methods 0.000 claims description 6
- 230000003746 surface roughness Effects 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 4
- 238000001514 detection method Methods 0.000 claims description 2
- 229910000833 kovar Inorganic materials 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 abstract description 5
- 239000012530 fluid Substances 0.000 abstract description 4
- 238000001354 calcination Methods 0.000 abstract 1
- 102100033121 Transcription factor 21 Human genes 0.000 description 2
- 101710119687 Transcription factor 21 Proteins 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
Landscapes
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Abstract
Description
【発明の詳細な説明】
３、発明の詳細な説明
［産業上の利用分野］
本発明は油や気体のような流体の圧力を検出する圧力検
出器に係り、特に高圧流体の圧力を検出するのに適した
圧力検出器に関するものである。[Detailed Description of the Invention] 3. Detailed Description of the Invention [Field of Industrial Application] The present invention relates to a pressure detector that detects the pressure of a fluid such as oil or gas, and particularly to a pressure detector that detects the pressure of a high-pressure fluid. The present invention relates to a pressure sensor suitable for
［従来の技術］
圧力検出器としては、測定圧に応じて歪変形する受圧ダ
イヤフラムを有し該ダイヤフラムの歪量を歪ゲージで検
出するものが多用されている。[Prior Art] Pressure detectors that have a pressure-receiving diaphragm that deforms in accordance with measured pressure and detect the amount of strain in the diaphragm with a strain gauge are often used.
特に高圧を測定するには、受圧ダイヤフラムに耐圧性の
ある金属ダイヤフラムを使用するのが良く、例えば特公
昭５８−５３７２号には金属ダイヤフラムに金属歪ゲー
ジを接合して測定部を構成した圧力検出器が開示されて
いる。In particular, to measure high pressures, it is best to use a pressure-resistant metal diaphragm as the pressure receiving diaphragm. For example, in Japanese Patent Publication No. 58-5372, a pressure detection device in which a metal strain gauge is bonded to a metal diaphragm constitutes a measuring section is recommended. The vessel is disclosed.
［発明が解決しようとする問題点］
しかしながら、上記金属歪ゲージは出力感度が低いとい
う難点があり、多段増幅やこれに伴なうノイズ除去等で
測定回路か複雑になる。[Problems to be Solved by the Invention] However, the metal strain gauge described above has a drawback of low output sensitivity, and the measurement circuit becomes complicated due to multi-stage amplification and accompanying noise removal.
一方、リニヤかつ高感度の出力が得られる半導体歪ゲー
ジを使用した圧力検出器が注目されているが、これらは
いずれも半導体チップ自身で受圧ダイヤフラムを構成し
ているため（例えば米国特許第３，８５８，１５０号）
低圧用のものしか得られないのが現状である。On the other hand, pressure detectors using semiconductor strain gauges that can provide linear and highly sensitive outputs are attracting attention, but these all have a pressure-receiving diaphragm made of the semiconductor chip itself (for example, U.S. Patent No. 3, 858,150)
Currently, only low-pressure products are available.
そこで、金属ダイヤフラムと半導体歪ゲージを形成した
半導体チップを組合せることにより、高圧の使用に耐え
かつ出力感度も良い圧力検出器を得ることを考えたが、
金属ダイヤフラムに上記半導体チップを充分な強度で接
合する構造が見い出し得なかった。Therefore, by combining a metal diaphragm and a semiconductor chip formed with a semiconductor strain gauge, we thought of creating a pressure sensor that can withstand high pressure use and has good output sensitivity.
It has not been possible to find a structure for bonding the semiconductor chip to a metal diaphragm with sufficient strength.
発明者らはかかる現状に鑑みて種々実験を繰り返した結
果、金属ダイヤフラムに歪ゲージ半導体チップが強固か
つ確実に接合された性能良好な圧力検出器を実現した。In view of the current situation, the inventors have repeatedly conducted various experiments, and as a result, have realized a pressure sensor with good performance in which a strain gauge semiconductor chip is firmly and reliably bonded to a metal diaphragm.
［問題点を解決するための手段］
本発明の構成を第１図で説明すると、受圧用金属ダイヤ
フラム１１のダイヤフラム面には低融点ガラス層３を介
して板ガラス４が接合してあり、該板ガラス４に半導体
チップ２を載置して上記板ガラス４と半導体チップ２を
陽極接合しである。[Means for Solving the Problems] The configuration of the present invention will be explained with reference to FIG. 1. A plate glass 4 is bonded to the diaphragm surface of a pressure-receiving metal diaphragm 11 via a low-melting glass layer 3. The semiconductor chip 2 is placed on the glass plate 4 and the semiconductor chip 2 is anodically bonded to the glass plate 4.
［作用］
上記接合構造の圧力検出器においては、半導体チップ２
は強固かつ確実に金属ダイヤフラム１１上に接合され、
高圧を充分な感度で精度、良く測定することができる。[Function] In the pressure sensor having the above bonded structure, the semiconductor chip 2
is firmly and reliably joined onto the metal diaphragm 11,
High pressure can be measured with sufficient sensitivity and accuracy.
［実施例１
第２図には圧力検出器の構造を示す。図において、検出
器ハウジング５０１は異径の筒体であり、小径の上端部
外周には取付用ネジ部５０１ ａが形成され、中間部外
周は回転操作用の六角面として必る。上記ハウジング５
０１内にはセンシングポデー１が挿通配設してあり、該
ポデー１は上端閉鎖の筒体であって大径の上端部をハウ
ジング５０１内壁の段付部に当接せしめ、下端開口の周
縁を上記ハウジング５０１の開口縁に溶接固定しである
。センシングボデー１は熱膨張率の小さいＦｅ−Ｎｉ−
Ｃｏ系合金で構成され、その上端面中心部は薄肉として
受圧用ダイヤフラム１１としである。[Embodiment 1] Fig. 2 shows the structure of a pressure detector. In the figure, the detector housing 501 is a cylindrical body with different diameters, and a mounting screw portion 501a is formed on the outer periphery of the upper end portion of the small diameter, and the outer periphery of the intermediate portion is necessarily a hexagonal surface for rotational operation. Housing 5 above
A sensing pod 1 is inserted into the inside of the housing 501, and the pod 1 is a cylindrical body with a closed top, and its large-diameter upper end abuts against the stepped part of the inner wall of the housing 501, and the periphery of the lower end opening. is welded and fixed to the opening edge of the housing 501. The sensing body 1 is made of Fe-Ni- which has a small coefficient of thermal expansion.
It is made of a Co-based alloy and has a thin wall at the center of its upper end surface as a pressure-receiving diaphragm 11.
ダイヤフラム１１の上面には後述する接合構造によって
半導体チップ２が接合しており、該半導体チップ２はこ
れを囲むようにセンシングボデー１の上面外周部に設け
たリング状セラミック基板５０２上の電極（図略）にワ
イヤ５０３で接続しである。セラミック基板５０２の上
記電極形成部にはピン５０４が立設され、これらピン５
０４はリード線５０５により、ハウジング５０１の上端
開口に密嵌されたコネクタ５０６のコネクタピン５０７
に接続しておる。A semiconductor chip 2 is bonded to the upper surface of the diaphragm 11 by a bonding structure described later, and the semiconductor chip 2 is surrounded by an electrode (see FIG. (omitted) with a wire 503. Pins 504 are provided upright on the electrode forming portion of the ceramic substrate 502, and these pins 5
04 is a connector pin 507 of a connector 506 that is tightly fitted into the upper end opening of the housing 501 by a lead wire 505.
is connected to.
上記半導体チップ２はＳｉ基板より構成され、該単板の
上面の４ケ所に小ロン（Ｂ）をドープして、第３図に示
す如く、Ｐ型半導体歪ゲージ２１．２２．２３．２４を
形成しである。歪ゲージ２１．２３は上記ダイヤフラム
１１の中心部直上に位置し、歪ゲージ２２．２４はダイ
ヤフラム１１の周縁部直上に位置している。そして、こ
れら歪ゲージ２１〜２４はＳｉ基板上に形成した電極リ
ード（図略）により互いに接続されて、第４図に示す如
きフルブリッジを構成している。The semiconductor chip 2 is composed of a Si substrate, and the upper surface of the single board is doped with small ions (B) at four places, and P-type semiconductor strain gauges 21, 22, 23, 24 are formed as shown in FIG. It is formed. Strain gauges 21 and 23 are located directly above the center of the diaphragm 11, and strain gauges 22 and 24 are located directly above the periphery of the diaphragm 11. These strain gauges 21 to 24 are connected to each other by electrode leads (not shown) formed on a Si substrate to form a full bridge as shown in FIG. 4.
上記半導体チップ２とセンシングホゾ−１の接合構造を
第１図に示す。図は第２図のＡ部を拡大したものであり
、センシングボデー１の上面には低融点ガラス層３およ
び板ガラス４を介して半導体チップ２を接合しておる。A bonding structure between the semiconductor chip 2 and the sensing tenon 1 is shown in FIG. The figure is an enlarged view of part A in FIG. 2, and a semiconductor chip 2 is bonded to the upper surface of the sensing body 1 via a low-melting glass layer 3 and a glass plate 4.
かかる接合構造を形成するには、センシングボデー１の
ダイヤフラム１１直上部に低融点ガラスのガラスペース
トを印刷して、これを仮焼く例えば約４００’Ｃ）する
。In order to form such a joint structure, a glass paste of low melting point glass is printed directly above the diaphragm 11 of the sensing body 1, and this is prebaked at, for example, about 400'C.
このガラスペーストはガラス粉をアルコール中に混入し
て得る。また、この時のセンシングボデー１の表面粗さ
は０．５μｍ〜３μｍとすると良い。This glass paste is obtained by mixing glass powder in alcohol. Further, the surface roughness of the sensing body 1 at this time is preferably 0.5 μm to 3 μm.
仮焼したガラス層３に板ガラス４を載せ、本焼成（例え
ば約５００’Ｃ）すると、板ガラス４はガラス層３を介
してセンシングボデー１に強固に接合される。しかる後
に、上記板ガラス４上に半導体デツプ２を載せ、これを
正極側になすとともに上記センシングボデー１を負極側
となして板ガラス４と半導体チップ２を低圧かつ高温（
約３００°Ｃ）で陽性接合する。この場合の接合強度は
半導体チップ４に接するガラス層の粗さに大きく左右さ
れ、発明者らの実験によると中心線平均粗さで０．０５
μｍ以下が必要である。When the plate glass 4 is placed on the calcined glass layer 3 and the main baking is performed (for example, at about 500'C), the plate glass 4 is firmly joined to the sensing body 1 via the glass layer 3. Thereafter, the semiconductor dip 2 is placed on the glass plate 4, and the semiconductor dip 2 is placed on the positive electrode side, and the sensing body 1 is placed on the negative electrode side, and the glass plate 4 and the semiconductor chip 2 are heated at low pressure and high temperature (
positive mating occurs at approximately 300°C). The bonding strength in this case largely depends on the roughness of the glass layer in contact with the semiconductor chip 4, and according to experiments by the inventors, the center line average roughness is 0.05.
μm or less is required.
なお直接センシングボデー１にガラス層を形成すること
も考えられるが、面粗度を０．０５μｍ以下にするのは
難しく、またガラス層を形成した後面粗度を小さくする
ため研磨することも考えられるが、センシングボデーと
一緒に研磨しても０゜０５μｍ以下にするのは非常に困
難であった。Although it is possible to form a glass layer directly on the sensing body 1, it is difficult to reduce the surface roughness to 0.05 μm or less, and it is also possible to polish the surface after forming the glass layer to reduce the surface roughness. However, even if the sensing body is polished together with the sensing body, it is extremely difficult to reduce the thickness to 0.05 μm or less.
ここにおいて、発明者らは市販の板ガラスに極めて面粗
度の良いものがあることに注目しくちなみに発明者らの
使用した板ガラスの面粗度は０゜０２μｍ程度である）
、これをガラス層３と半導体チップ２間に介在せしめる
ことにより、半導体チップ２をセンシングボデー１に充
分な強度で接合した。Here, the inventors note that some commercially available plate glasses have extremely good surface roughness; by the way, the surface roughness of the plate glass used by the inventors is approximately 0.02 μm.)
By interposing this between the glass layer 3 and the semiconductor chip 2, the semiconductor chip 2 was bonded to the sensing body 1 with sufficient strength.
なお、陽極接合時の温度の影響による半導体チップ２等
の応力割れを防止し、かつ使用時の熱衝撃に対する耐性
を向上させるためにはセンシングボデー１、ガラス層３
および板ガラス４の熱膨張率は２．０ｘ１０ ’／’
Ｃ〜６．０×１０ ”／°Ｃの間に設定するのが良い
。In addition, in order to prevent stress cracking of the semiconductor chip 2 etc. due to the influence of temperature during anodic bonding and to improve resistance to thermal shock during use, the sensing body 1 and the glass layer 3 are
And the coefficient of thermal expansion of plate glass 4 is 2.0x10'/'
It is preferable to set the temperature between C and 6.0×10”/°C.
かかる構造の圧力検出器によれば、導入圧によリダイヤ
フラム１１が変形するとこれに一体に接合された半導体
チップ２に歪応力を生じ、該チップ２上の歪ゲージ２１
．２３の抵抗値が大きく変化して測定圧力に応じたリニ
ヤかっ高感度の出力信号がＩ？られる。According to the pressure detector having such a structure, when the rediaphragm 11 is deformed by the introduced pressure, strain stress is generated in the semiconductor chip 2 integrally bonded to the rediaphragm 11, and the strain gauge 21 on the chip 2 is
．． The resistance value of 23 changes greatly and a linear and highly sensitive output signal according to the measured pressure is I? It will be done.
［発明の効果］
以上説明したように本発明によれば直接圧力を受けるグ
イレフラムの部分か耐久性が良好で強度が大きい金属を
用いることで高圧に耐え、しかも板ガラスを接合するの
で構成および工程が簡単でしかも陽極接合を行うので接
合時の歪が小さく接合強度も大きいので安定した圧力検
出器を提供できるという優れた効果がある。[Effects of the Invention] As explained above, according to the present invention, the parts of the Guilleflame that are directly subjected to pressure can withstand high pressure by using a metal with good durability and high strength.Moreover, the structure and process can be simplified because the plate glass is bonded. Since it is simple and uses anodic bonding, the strain during bonding is small and the bonding strength is high, so it has the excellent effect of providing a stable pressure detector.
第１図は本発明の要部断面図で第２図のＡ部拡大断面図
、第２図は圧力検出器の全体断面図、第３図は半導体チ
ップの平面図、第４図は歪ゲージの接続図である。
１・・・・・・センシングボデー
１１・・・・・・受圧用金属ダイヤフラム２・・・・・
・”半導体チップ
３・・・・・・低融点ガラス層
４・・・・・・板ガラス
第１図
第２図Fig. 1 is a sectional view of the main parts of the present invention, an enlarged sectional view of part A in Fig. 2, an overall sectional view of the pressure sensor, Fig. 3 is a plan view of the semiconductor chip, and Fig. 4 is a strain gauge. FIG. 1... Sensing body 11... Pressure receiving metal diaphragm 2...
・"Semiconductor chip 3...Low melting point glass layer 4...Plate glass Figure 1 Figure 2
Claims (4)
点ガラス層を介して板ガラスを接合し、該板ガラスに歪
ゲージ半導体チップを載置して上記板ガラスと歪ゲージ
半導体チップを陽極接合してなる圧力検出器。(1) Pressure detection by bonding a plate glass to the diaphragm surface of a pressure-receiving metal diaphragm via a low-melting glass layer, placing a strain gauge semiconductor chip on the plate glass, and anodically bonding the plate glass and the strain gauge semiconductor chip. vessel.
特許請求の範囲第１項記載の圧力検出器。(2) The pressure detector according to claim 1, wherein the plate glass has a surface roughness of 0.05 μm or less.
上記受圧用金属ダイヤフラム、低融点ガラス層および板
ガラスの熱膨脹係数を２．０×１０＾−＾６／℃〜６．
０×１０＾−＾６／℃とした特許請求の範囲第１項記載
の圧力検出器。(3) The strain gauge semiconductor chip is composed of a Si substrate,
The thermal expansion coefficient of the pressure-receiving metal diaphragm, the low-melting point glass layer, and the plate glass is 2.0×10^-^6/℃~6.
The pressure sensor according to claim 1, wherein the temperature is 0x10^-^6/°C.
した特許請求の範囲第３項記載の圧力検出器。(4) The pressure detector according to claim 3, wherein the pressure receiving metal diaphragm is made of Kovar material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13525886A JPS62291533A (en) | 1986-06-11 | 1986-06-11 | Pressure detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13525886A JPS62291533A (en) | 1986-06-11 | 1986-06-11 | Pressure detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62291533A true JPS62291533A (en) | 1987-12-18 |
Family
ID=15147499
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13525886A Pending JPS62291533A (en) | 1986-06-11 | 1986-06-11 | Pressure detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62291533A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5872315A (en) * | 1996-02-26 | 1999-02-16 | Denso Corporation | Pressure detecting apparatus |
| EP2759607A1 (en) | 2013-01-25 | 2014-07-30 | Seiko Instruments Inc. | Two-phase stainless steel, method of manufacturing the same, and diaphragm, pressure sensor, and diaphragm valve using two-phase stainless steel |
| WO2015098324A1 (en) | 2013-12-25 | 2015-07-02 | 日立オートモティブシステムズ株式会社 | Pressure measurement device |
| CN106768215A (en) * | 2017-03-24 | 2017-05-31 | 上海大和衡器有限公司 | Deformation measurement device |
| JPWO2017212866A1 (en) * | 2016-06-08 | 2019-02-14 | 日立オートモティブシステムズ株式会社 | Force sensor |
-
1986
- 1986-06-11 JP JP13525886A patent/JPS62291533A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5872315A (en) * | 1996-02-26 | 1999-02-16 | Denso Corporation | Pressure detecting apparatus |
| EP2759607A1 (en) | 2013-01-25 | 2014-07-30 | Seiko Instruments Inc. | Two-phase stainless steel, method of manufacturing the same, and diaphragm, pressure sensor, and diaphragm valve using two-phase stainless steel |
| US9523620B2 (en) | 2013-01-25 | 2016-12-20 | Seiko Instruments Inc. | Two-phase stainless steel, method of manufacturing the same, and diaphragm, pressure sensor, and diaphragm valve using two-phase stainless steel |
| WO2015098324A1 (en) | 2013-12-25 | 2015-07-02 | 日立オートモティブシステムズ株式会社 | Pressure measurement device |
| CN105849521A (en) * | 2013-12-25 | 2016-08-10 | 日立汽车***株式会社 | Pressure measurement device |
| JPWO2015098324A1 (en) * | 2013-12-25 | 2017-03-23 | 日立オートモティブシステムズ株式会社 | Pressure measuring device |
| US10139300B2 (en) | 2013-12-25 | 2018-11-27 | Hitachi Automotive Systems, Ltd. | High pressure strain detection device with a base made of a first brittle material and a strain detection element bonded to the base via a second brittle material |
| JPWO2017212866A1 (en) * | 2016-06-08 | 2019-02-14 | 日立オートモティブシステムズ株式会社 | Force sensor |
| CN106768215A (en) * | 2017-03-24 | 2017-05-31 | 上海大和衡器有限公司 | Deformation measurement device |
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