JPS5787138A - Manufacture of semiconductor - Google Patents

Manufacture of semiconductor

Info

Publication number
JPS5787138A
JPS5787138A JP55163558A JP16355880A JPS5787138A JP S5787138 A JPS5787138 A JP S5787138A JP 55163558 A JP55163558 A JP 55163558A JP 16355880 A JP16355880 A JP 16355880A JP S5787138 A JPS5787138 A JP S5787138A
Authority
JP
Japan
Prior art keywords
film
density
opening
making
phosphoric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55163558A
Other languages
Japanese (ja)
Inventor
Shoichi Komatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP55163558A priority Critical patent/JPS5787138A/en
Publication of JPS5787138A publication Critical patent/JPS5787138A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To prevent breaking of a circuit wiring by making gentle the slopes of an opening and making the density of impurity or the quality of a film ununiform in forming the opening in order to accelerate etching speed of the surface layer of CVD film to be used for interlayer insulation films. CONSTITUTION:A PSG film to be deposited on an Si substrate 3 as a interlayer film is formed with ununformity of the density of phosphoric acid in the film by, for instance, changing the flow of growing phosphoric compound (such as PH3). For example, the lower layer 2 is formed with the thickness of 9,000Angstrom and the phosphoric density of 2mol and the upper layer is laminated to the thichness of 1,000 Angstrom with the density of 4mol. After densifying the film 1, 2 by heat treatment, an opening is formed by photo etching and an electrode layer is formed by vaporating a metallic film 4. This makes the opening wider and the slopes gentle making the metallic films cover the level difference uniformly, preventing circuit breaking and improving yield rate and reliability.
JP55163558A 1980-11-20 1980-11-20 Manufacture of semiconductor Pending JPS5787138A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55163558A JPS5787138A (en) 1980-11-20 1980-11-20 Manufacture of semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55163558A JPS5787138A (en) 1980-11-20 1980-11-20 Manufacture of semiconductor

Publications (1)

Publication Number Publication Date
JPS5787138A true JPS5787138A (en) 1982-05-31

Family

ID=15776175

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55163558A Pending JPS5787138A (en) 1980-11-20 1980-11-20 Manufacture of semiconductor

Country Status (1)

Country Link
JP (1) JPS5787138A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4412132A (en) * 1981-07-08 1983-10-25 Jeol Ltd. Electron lens equipped with three magnetic pole pieces

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4412132A (en) * 1981-07-08 1983-10-25 Jeol Ltd. Electron lens equipped with three magnetic pole pieces

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