JPS5519829A - Glass mold piling type semiconductor device - Google Patents
Glass mold piling type semiconductor deviceInfo
- Publication number
- JPS5519829A JPS5519829A JP9234978A JP9234978A JPS5519829A JP S5519829 A JPS5519829 A JP S5519829A JP 9234978 A JP9234978 A JP 9234978A JP 9234978 A JP9234978 A JP 9234978A JP S5519829 A JPS5519829 A JP S5519829A
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- crystallizing
- glass components
- semiconductor device
- type semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Glass Compositions (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
PURPOSE: To seal a pn joining section by crystallizing the glass-constituting elements, composed of ZnO, B2O3 and SiO2, using a temperature lower than the conventional crystallizing temperature.
CONSTITUTION: When a semiconeuctor-pellets-soldered block is being provided with an electrode and covered with a pn joint, it is covered with glass components, with weight ratio of 65%W70% of ZnO, 20%W25% of B2O3 and 8%W11% of SiO2, and calcined at a temperature between 660W710°C. By crystallizing these glass components using a temperature lower than the conventional glass components crystallizing temperature, it is possible to make the thermal expansion coefficient equal to that of silicon or bring it down within a range of 32W45×10-7/°C. And therefore, the silicon block can be prevented from being deformed due to utilization of a low temperature calcination and, at the same time, it is also prevented from occurrence of thermal crack at the time of solder-plating of the lead wire.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9234978A JPS5519829A (en) | 1978-07-28 | 1978-07-28 | Glass mold piling type semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9234978A JPS5519829A (en) | 1978-07-28 | 1978-07-28 | Glass mold piling type semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5519829A true JPS5519829A (en) | 1980-02-12 |
JPS6118863B2 JPS6118863B2 (en) | 1986-05-14 |
Family
ID=14051918
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9234978A Granted JPS5519829A (en) | 1978-07-28 | 1978-07-28 | Glass mold piling type semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5519829A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6211722U (en) * | 1985-07-04 | 1987-01-24 |
-
1978
- 1978-07-28 JP JP9234978A patent/JPS5519829A/en active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6211722U (en) * | 1985-07-04 | 1987-01-24 | ||
JPH055151Y2 (en) * | 1985-07-04 | 1993-02-10 |
Also Published As
Publication number | Publication date |
---|---|
JPS6118863B2 (en) | 1986-05-14 |
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