JPS5536976A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5536976A
JPS5536976A JP11015778A JP11015778A JPS5536976A JP S5536976 A JPS5536976 A JP S5536976A JP 11015778 A JP11015778 A JP 11015778A JP 11015778 A JP11015778 A JP 11015778A JP S5536976 A JPS5536976 A JP S5536976A
Authority
JP
Japan
Prior art keywords
layer
electrodes
oxide layer
deposited
gate oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11015778A
Other languages
Japanese (ja)
Other versions
JPS6120153B2 (en
Inventor
Nobuhiro Minotani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP11015778A priority Critical patent/JPS5536976A/en
Publication of JPS5536976A publication Critical patent/JPS5536976A/en
Publication of JPS6120153B2 publication Critical patent/JPS6120153B2/ja
Granted legal-status Critical Current

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Abstract

PURPOSE: To get stable and high speed operative device by providing first transmission electrodes difinitly spaced on semiconductor substrate through gate oxide layer and covering whole surface with oxide layer by oxidation of polycrystal Si and positioning it between the first electrodes to form second transmission electrodes.
CONSTITUTION: Oxide layer 12 is deposited on N-type Si substrate and P-type areas 13 and 14 are formed on both ends of the substrate 11 by ion injection and the layer 12 therebetween is removed and then a thin first gate oxide layer 15 is deposited newly. Then difinitly spaced first transmission electrodes 16 consisting of metal having high melting point such as Mo or W are formed and polycristal Si layer 20 is deposited on whole surface. Then the layer 20 is transformed fully into SiO2 layer by heating under damp oxygen atomosphere to form a second gate oxide layer 17 and Al second electrodes 18 are formed in positioning between the elctrodes 16 on the layer 17 and electrodes 19 are formed on the areas 13 and 14. Thus, it is possible to form an electrode of low resistant and stabilize CCD charactristics.
COPYRIGHT: (C)1980,JPO&Japio
JP11015778A 1978-09-05 1978-09-05 Production of semiconductor device Granted JPS5536976A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11015778A JPS5536976A (en) 1978-09-05 1978-09-05 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11015778A JPS5536976A (en) 1978-09-05 1978-09-05 Production of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5536976A true JPS5536976A (en) 1980-03-14
JPS6120153B2 JPS6120153B2 (en) 1986-05-21

Family

ID=14528489

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11015778A Granted JPS5536976A (en) 1978-09-05 1978-09-05 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5536976A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5749270A (en) * 1980-09-09 1982-03-23 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS61196575A (en) * 1985-02-25 1986-08-30 Sony Tektronix Corp Single phase charge coupled device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5389374A (en) * 1977-01-18 1978-08-05 Toshiba Corp Production of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5389374A (en) * 1977-01-18 1978-08-05 Toshiba Corp Production of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5749270A (en) * 1980-09-09 1982-03-23 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS61196575A (en) * 1985-02-25 1986-08-30 Sony Tektronix Corp Single phase charge coupled device

Also Published As

Publication number Publication date
JPS6120153B2 (en) 1986-05-21

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