JPS5373087A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5373087A
JPS5373087A JP14950976A JP14950976A JPS5373087A JP S5373087 A JPS5373087 A JP S5373087A JP 14950976 A JP14950976 A JP 14950976A JP 14950976 A JP14950976 A JP 14950976A JP S5373087 A JPS5373087 A JP S5373087A
Authority
JP
Japan
Prior art keywords
semiconductor device
manufacture
formation region
element formation
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14950976A
Other languages
Japanese (ja)
Other versions
JPS6038023B2 (en
Inventor
Hisakazu Mukai
Akira Ariyoshi
Masanobu Doken
Katsutoshi Izumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP14950976A priority Critical patent/JPS6038023B2/en
Publication of JPS5373087A publication Critical patent/JPS5373087A/en
Publication of JPS6038023B2 publication Critical patent/JPS6038023B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To make the isolation from other element formation region accurate and to miniaturize a semiconductor device by encircling the semiconductor element formation region with a SiO2 layer converted into an insulator and a polycrystalline semiconductor layer.
COPYRIGHT: (C)1978,JPO&Japio
JP14950976A 1976-12-13 1976-12-13 Manufacturing method for semiconductor devices Expired JPS6038023B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14950976A JPS6038023B2 (en) 1976-12-13 1976-12-13 Manufacturing method for semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14950976A JPS6038023B2 (en) 1976-12-13 1976-12-13 Manufacturing method for semiconductor devices

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP27041384A Division JPS60173860A (en) 1984-12-21 1984-12-21 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5373087A true JPS5373087A (en) 1978-06-29
JPS6038023B2 JPS6038023B2 (en) 1985-08-29

Family

ID=15476686

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14950976A Expired JPS6038023B2 (en) 1976-12-13 1976-12-13 Manufacturing method for semiconductor devices

Country Status (1)

Country Link
JP (1) JPS6038023B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4912538A (en) * 1985-12-20 1990-03-27 Licentia Patent-Verwaltungs Gmbh Structured semiconductor body

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4912538A (en) * 1985-12-20 1990-03-27 Licentia Patent-Verwaltungs Gmbh Structured semiconductor body

Also Published As

Publication number Publication date
JPS6038023B2 (en) 1985-08-29

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