JPS5980325A - Distribution of reaction gas - Google Patents
Distribution of reaction gasInfo
- Publication number
- JPS5980325A JPS5980325A JP19113282A JP19113282A JPS5980325A JP S5980325 A JPS5980325 A JP S5980325A JP 19113282 A JP19113282 A JP 19113282A JP 19113282 A JP19113282 A JP 19113282A JP S5980325 A JPS5980325 A JP S5980325A
- Authority
- JP
- Japan
- Prior art keywords
- chambers
- reaction gases
- reaction
- supplied
- gases
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J4/00—Feed or outlet devices; Feed or outlet control devices
- B01J4/008—Feed or outlet control devices
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】
（８，）発明の技（１１１分野
本発明は反応ガス分配方法に係り、特に複数個のチー＼
・ンバーで同一物質を化学気相成長法ＣＣＶＤ法）で形
成する場なの反応ガスの分配方法に関する。Detailed Description of the Invention (8,) Techniques of the Invention (111 Fields) The present invention relates to a method for distributing a reactive gas, especially when a plurality of
・It relates to a method of distributing a reactive gas when the same substance is formed in a chamber by chemical vapor deposition (CCVD).
（ＩＪｌ 技で１１１のＨ′景
半７１本体装置の製造工程において、半導体基板上に絶
縁１藺成は保護膜を形式する方法として一般にＣＶＤ法
が用いられているう
（０） 従来技術と問題点
上記ＣＶＤ法を用いて、たとえば複数個配設されたプラ
ズマＣＶＤ装置のチャンバー内に載ｎｔさへ１−
れた半導体基板上にパッジＩｊジョン膜としての窒化シ
リコンＩｆ！ｉ３ （Ｓｉ３１’Ｊ＋ｌＩの）などを形
成する場合の従来の反応ガス分配方法について第１図を
用いて説明すると、チャンバー１ＶＣｔよ窒化シリコン
Ｉｌｌ形成するための複数の反応ガヌ、たとえばモノシ
ランガス（ＳｉＨ４） 、アンモニアガス（ＮＨａ）、
及びアルゴンガヌ（Ａｒ）が夫々供給パイグフィン２・
３・４を通じ、該供給バイフ゛ライン２・３・４ニ夫々
（＝Ｊ設されたマノフローコン１゛ローラーｂ・６・７
によって所定の流量に調整され供給されている。以下同
様に複数個配設されたチャンバーＩｎにも夫々供給パイ
グフィン２ ｎ・３］１・４１１及びイ」設されたマス
フローコントローラー、５ｎ・６１１・７ｎ［よって前
記Ｓ：ＬＨ４ガス、ＮＨ３ガヌ及びＡｒガスが夫々所定
流量供給される。しかしながらかかる反応ガヌ分配方法
においては、多数のマスフローコントローラー及び前後
に付随する開閉パルプ（図示せず）を必要とし、その結
果費用の増大につながり、かつｆｉｌ！用部品数の増大
による部品欠陥確率の増加によって装置の信頼性が損な
わノする問題がある。(IJl Technology 111 H'Keihan 71 In the manufacturing process of the main unit, the CVD method is generally used as a method for forming a protective film on a semiconductor substrate to form an insulating layer. (0) Conventional technology and problems Using the above-mentioned CVD method, silicon nitride If! ), etc., will be explained with reference to FIG. 1. From the chamber 1VCt to the plurality of reaction gases for forming silicon nitride Ill, for example, monosilane gas (SiH4), ammonia gas (NHa), etc. ,
and argonganu (Ar) respectively supply pike fin 2.
3 and 4, the supply bi-line 2, 3, and 4 respectively (= J installed Manoflo controller 1, rollers b, 6, 7
The flow rate is regulated and supplied to a predetermined level. Thereafter, mass flow controllers 5n, 611, 7n [therefore, the above S: LH4 gas, NH3 gas and Ar gas is supplied at a predetermined flow rate. However, such reactive Ganu distribution methods require multiple mass flow controllers and associated opening and closing pulps (not shown), resulting in increased costs and fil! There is a problem in that the reliability of the device is impaired due to an increase in the probability of defective parts due to an increase in the number of parts used.
Ｉ）発明の目的
本発明はかかる問題点に鑑みなさｉまたもので、椹数個
のチャンバー毎に設けられた複数の反応ガス用マスフロ
ーコントローラー及ヒソｈ Ｋ 付ｒ％Ｑ した開閉バ
ルブなどの部品数を削減することによってコストダウン
を図り、かつ使用部品の削減によって装置系の故障確率
を減少しつる反応ガス分配方法の提供にある。I) Purpose of the Invention The present invention has been made in view of the above problems and provides parts such as mass flow controllers for a plurality of reaction gases provided for each of several chambers and on/off valves with a The object of the present invention is to provide a reactive gas distribution method that reduces costs by reducing the number of parts used, and reduces the failure probability of an apparatus system by reducing the number of parts used.
（ｅ） 発明の構成
即ち本発明は複数の反応ガスを用い、複数個のチャンバ
ーで成長膜を化学気相成長するに際し、１）１１記ＩＬ
ｉ数の反応ガスを予め混合容器に蓄えて、該混合容器内
にて、前記複数の反応ガスを均一に混合した後、該混合
反応ガスを前記複数個のチャンバー毎分配供給するよう
にしたことを特徴とする。(e) Structure of the invention, that is, the present invention uses a plurality of reaction gases and performs chemical vapor deposition of a grown film in a plurality of chambers.
i number of reaction gases are stored in a mixing container in advance, and after uniformly mixing the plurality of reaction gases in the mixing container, the mixed reaction gas is distributed and supplied to each of the plurality of chambers. It is characterized by
（ｆ） 発明の実施例
以下本発明の実施例について図１ｉＴｊ 全参照して説
明する。第２図は本発明の一実施例を説明するための模
式的構成図であり、前図と同等の部分については同一符
号を付している、
同図において、たとえば前述したように半導体基板上に
グヲズマＣＶＤ法によって窒化Ｎ（Ｓ１ａＮ４１漢）を
成長さす場合に、まず複数の反応ガス、即ちモノシラン
ガス（ＳｉＨ＋）が供給パイプラインン２゜アンモニア
ガス（ＮＨ３）が供給パイプライン３゜及ヒアルゴンガ
ヌ（Ａｒ）が供給パイプライン４を通じて混合容器８に
供給され、該混合容器８内に溜まる、この場合供給パイ
プライン２上に伺設された５ｉＨ４用マヌフローコント
ローラー５ 、 同Ｌ〈供給バイプライン３上に（＝Ｊ
設さ１またＮＨ３用マヌフローコントローラー６．及び
供給パイプライン４に付設されたＡｒ用マスフローコン
トローラーによって夫々の反応ガスは所定流量流れるよ
うに調整されている。該混合容器８内に蓄えられた反応
ガスは該混合容器８内にて均一に混合され所望の混合比
を有する混合反応ガスが形成される。この場α反応カヌ
の均一化のため該混合容器内に攬Ｉ″Ｐ１幾１１″ｒＩ
を設けてもよく、又該混き容器を２個設けでもよい。(f) Embodiments of the Invention Hereinafter, embodiments of the present invention will be described with full reference to FIG. 1iTj. FIG. 2 is a schematic configuration diagram for explaining one embodiment of the present invention, and the same parts as those in the previous figure are given the same reference numerals. When growing N nitride (S1aN41) by the Gwozma CVD method, first, a plurality of reactant gases, namely monosilane gas (SiH+) are supplied to the supply pipeline 2°, ammonia gas (NH3) is supplied to the supply pipeline 3°, and hyalgonium gas (Ar) is grown. ) is supplied to the mixing vessel 8 through the supply pipeline 4 and accumulated in the mixing vessel 8. In this case, the 5iH4 manuflow controller 5 installed on the supply pipeline 2, =J
Installation 1 also Manuflow controller for NH3 6. An Ar mass flow controller attached to the supply pipeline 4 adjusts each reaction gas to flow at a predetermined flow rate. The reaction gases stored in the mixing container 8 are uniformly mixed in the mixing container 8 to form a mixed reaction gas having a desired mixing ratio. At this time, in order to homogenize the α reaction mixture, water was added into the mixing container.
Alternatively, two mixing containers may be provided.
核混合容器８内にて充分均一に混合さ）また混合反応ガ
スは、該混合容器８を介して各チャンツク−１＆至ｉｎ
に夫々伺設された流量計９及至９Ｊｌを通じて所望の混
合比を有する混合反応力′スが分配供給さノする。この
ように各チャンノく一毎に１個のｆ＆ 、１代Ｒｌ又ハ
マヌフローコントローラーによつ−ｒ供給さノまた混合
反応ガスを用いて上記チャンノく一内にて通常のフ゛ラ
ズマｅＶＤ法にて半導体基板上に窒化膜（Ｓ：１３Ｎ４
）を形成することが可能である。The mixed reactant gas (mixed sufficiently uniformly in the nuclear mixing container 8) is passed through the mixing container 8 to each tank tank 1 &
A mixing reaction force having a desired mixing ratio is distributed and supplied through flowmeters 9 to 9Jl respectively installed in the flowmeters. In this way, one f&, one Rl or -r is supplied to each channel by the Hamanu flow controller, and the mixed reaction gas is used in the usual plasma eVD method in the channel. A nitride film (S:13N4
) can be formed.
（８）＠明の効果
以上１シａ明したごとく本発明によｆｌば予め混合容器
内に複数の反応ガスを届め、該ｌ捏合容器内にて均一に
混合した後、該混合容器を介して複数（ＩＩＡのチャン
バーに夫々１個の流量計又はマスフローコントローラー
によって混合反応ガスを供給することが可能となり、し
たがって各チャンノ（−毎に使用１−る複数個のマスフ
ローコントローラー及びそれに何階する開閉バルブなど
の部品の大［１］な削減が可能であり、かつ部品数の大
［（Ｊな削θ・（によって袋間の信頼性向上などに大き
な効果がある。尚、本実施例は木）ｄ明の一例としてあ
げたものであり、本発明の範囲を制限するものではない
、(8) Effect of @Ming As explained above, according to the present invention, a plurality of reaction gases are delivered in advance into a mixing container, and after uniformly mixing in the kneading container, the mixing container is It is possible to supply a mixed reaction gas by one flow meter or mass flow controller to each chamber of the IIA through multiple flow meters or mass flow controllers. It is possible to greatly reduce the number of parts such as opening/closing valves, and the number of parts is greatly improved by reducing the number of parts. (Thursday) This is given as an example and is not intended to limit the scope of the present invention.
第１図は従来の反応ガス分ＩＩｉ己方法を説明するだめ
の模式的（／ｉ！成図、第２図は本発明の一実施例によ
る反応ガス分配方法を説明するための模式的構成図であ
る。
図において、ｌ・・・・・ｌｎはグーヤンバー、８は混
合容器を示す。FIG. 1 is a schematic diagram for explaining a conventional reaction gas distribution method, and FIG. 2 is a schematic diagram for explaining a reaction gas distribution method according to an embodiment of the present invention. In the figure, l...ln indicates gouyan bar and 8 indicates a mixing container.
Claims (1)
１藺を化学気相成長するに１祭し、ＡｉＪ記複数の反応
ガスを予め混合容器に蓄えて、該混合容器内にて、前記
１．■敵の反応ガヌを均一に混合した後、該混合反応ガ
スを前記複数個のチャンバーに分配供給するようにした
ことを特徴とする反応ガス分配方法。14 in multiple chambers using L'J reaction gas.
One step is carried out once for chemical vapor deposition, a plurality of reaction gases are stored in a mixing container in advance, and the above-mentioned step 1 is carried out in the mixing container. (2) A reactive gas distribution method characterized in that after uniformly mixing the enemy's reactive gas, the mixed reactive gas is distributed and supplied to the plurality of chambers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19113282A JPS5980325A (en) | 1982-10-29 | 1982-10-29 | Distribution of reaction gas |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19113282A JPS5980325A (en) | 1982-10-29 | 1982-10-29 | Distribution of reaction gas |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5980325A true JPS5980325A (en) | 1984-05-09 |
Family
ID=16269406
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19113282A Pending JPS5980325A (en) | 1982-10-29 | 1982-10-29 | Distribution of reaction gas |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5980325A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60180995A (en) * | 1984-02-24 | 1985-09-14 | Nippon Telegr & Teleph Corp <Ntt> | Method and device for vapor phase epitaxial growth |
| JPH05343392A (en) * | 1991-02-20 | 1993-12-24 | Handotai Process Kenkyusho:Kk | Semiconductor manufacturing apparatus |
| WO1994015707A2 (en) * | 1993-01-15 | 1994-07-21 | Aixtron Gmbh | Device for simultaneously letting in at least one process gas into a plurality of reaction chambers |
| EP0623381A1 (en) * | 1993-05-07 | 1994-11-09 | Teisan Kabushiki Kaisha | Mixed gas supply system |
| EP0722909A1 (en) * | 1995-01-20 | 1996-07-24 | Heraeus Quarzglas GmbH | Device for splitting a gas stream into several partial gas streams |
| CZ297050B6 (en) * | 2000-03-29 | 2006-08-16 | Spolek Pro Chemickou A Hutní Výrobu, A. S. | Mixing process of quick chemical reaction reactants and apparatus for making the same |
| JP2016033997A (en) * | 2014-07-31 | 2016-03-10 | 株式会社ニューフレアテクノロジー | Vapor growth device and vapor growth method |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55167199A (en) * | 1979-06-13 | 1980-12-26 | Mitsubishi Electric Corp | Vapor phase epitaxial growing apparatus |
-
1982
- 1982-10-29 JP JP19113282A patent/JPS5980325A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55167199A (en) * | 1979-06-13 | 1980-12-26 | Mitsubishi Electric Corp | Vapor phase epitaxial growing apparatus |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60180995A (en) * | 1984-02-24 | 1985-09-14 | Nippon Telegr & Teleph Corp <Ntt> | Method and device for vapor phase epitaxial growth |
| JPH05343392A (en) * | 1991-02-20 | 1993-12-24 | Handotai Process Kenkyusho:Kk | Semiconductor manufacturing apparatus |
| JPH0766919B2 (en) * | 1991-02-20 | 1995-07-19 | 株式会社半導体プロセス研究所 | Semiconductor manufacturing equipment |
| WO1994015707A2 (en) * | 1993-01-15 | 1994-07-21 | Aixtron Gmbh | Device for simultaneously letting in at least one process gas into a plurality of reaction chambers |
| WO1994015707A3 (en) * | 1993-01-15 | 1994-09-01 | Aixtron Gmbh | Device for simultaneously letting in at least one process gas into a plurality of reaction chambers |
| EP0623381A1 (en) * | 1993-05-07 | 1994-11-09 | Teisan Kabushiki Kaisha | Mixed gas supply system |
| EP0722909A1 (en) * | 1995-01-20 | 1996-07-24 | Heraeus Quarzglas GmbH | Device for splitting a gas stream into several partial gas streams |
| CZ297050B6 (en) * | 2000-03-29 | 2006-08-16 | Spolek Pro Chemickou A Hutní Výrobu, A. S. | Mixing process of quick chemical reaction reactants and apparatus for making the same |
| JP2016033997A (en) * | 2014-07-31 | 2016-03-10 | 株式会社ニューフレアテクノロジー | Vapor growth device and vapor growth method |
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