JPS55163888A - Wavelength multiplex semiconductor laser device - Google Patents

Wavelength multiplex semiconductor laser device

Info

Publication number
JPS55163888A
JPS55163888A JP7111079A JP7111079A JPS55163888A JP S55163888 A JPS55163888 A JP S55163888A JP 7111079 A JP7111079 A JP 7111079A JP 7111079 A JP7111079 A JP 7111079A JP S55163888 A JPS55163888 A JP S55163888A
Authority
JP
Japan
Prior art keywords
light
band gap
active layer
gap energy
waveguide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7111079A
Other languages
Japanese (ja)
Inventor
Ikuo Mito
Isao Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP7111079A priority Critical patent/JPS55163888A/en
Priority to US06/142,743 priority patent/US4318058A/en
Publication of JPS55163888A publication Critical patent/JPS55163888A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4056—Edge-emitting structures emitting light in more than one direction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Optical Integrated Circuits (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To enable propagation of an output light from an LD with low loss by employing a semiconductor film varying in band gap energy in the film surface as the laser diode (LD) at active layer and a waveguide layer of the light from the LD. CONSTITUTION:The light incident from distributed reflection type laser diodes (LD) 151-154 into waveguide units 101-104 is introduced in the film surface of an active layer 3 toward a direction increasing the mixed crystal ratio of AlAs of the active layer 3, that is, the band gap energy. Since the energy of photon of the light thus introduced is not larger than the band gap energy of the waveguide layer, the light absorption loss due to the waveguide layer becomes low.
JP7111079A 1979-04-24 1979-06-08 Wavelength multiplex semiconductor laser device Pending JPS55163888A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP7111079A JPS55163888A (en) 1979-06-08 1979-06-08 Wavelength multiplex semiconductor laser device
US06/142,743 US4318058A (en) 1979-04-24 1980-04-22 Semiconductor diode laser array

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7111079A JPS55163888A (en) 1979-06-08 1979-06-08 Wavelength multiplex semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS55163888A true JPS55163888A (en) 1980-12-20

Family

ID=13451078

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7111079A Pending JPS55163888A (en) 1979-04-24 1979-06-08 Wavelength multiplex semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS55163888A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5880617A (en) * 1981-11-09 1983-05-14 Nippon Telegr & Teleph Corp <Ntt> Waveguide type optical switching element
US5233187A (en) * 1991-01-22 1993-08-03 Canon Kabushiki Kaisha Multi-wavelength light detecting and/or emitting apparatuses having serially arranged grating directional couplers

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5244192A (en) * 1975-10-06 1977-04-06 Hitachi Ltd Optical integrated circuit
JPS5427786A (en) * 1977-08-04 1979-03-02 Nec Corp Integrated light source

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5244192A (en) * 1975-10-06 1977-04-06 Hitachi Ltd Optical integrated circuit
JPS5427786A (en) * 1977-08-04 1979-03-02 Nec Corp Integrated light source

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5880617A (en) * 1981-11-09 1983-05-14 Nippon Telegr & Teleph Corp <Ntt> Waveguide type optical switching element
US5233187A (en) * 1991-01-22 1993-08-03 Canon Kabushiki Kaisha Multi-wavelength light detecting and/or emitting apparatuses having serially arranged grating directional couplers

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