JPS57143887A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
JPS57143887A
JPS57143887A JP2853581A JP2853581A JPS57143887A JP S57143887 A JPS57143887 A JP S57143887A JP 2853581 A JP2853581 A JP 2853581A JP 2853581 A JP2853581 A JP 2853581A JP S57143887 A JPS57143887 A JP S57143887A
Authority
JP
Japan
Prior art keywords
cleavage plane
face
semiconductor laser
mirror
lambda1
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2853581A
Other languages
Japanese (ja)
Other versions
JPS6258556B2 (en
Inventor
Kouji Shinohara
Yoshito Nishijima
Yoshio Kawabata
Hirokazu Fukuda
Kosaku Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP2853581A priority Critical patent/JPS57143887A/en
Publication of JPS57143887A publication Critical patent/JPS57143887A/en
Publication of JPS6258556B2 publication Critical patent/JPS6258556B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/105—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To obtain laser oscillation within a wide wavelength range without causing a mode-hop by using one cleavage plane of a semiconductor laser as one resonance mirror face and arranging a reflection means forming another movable resonance mirror face at the opposite side to the cleavage plane. CONSTITUTION:The cleavage plane 3 of the semiconductor laser 1 with a P-N junction 2 functions as one resonance mirror. Another crystal face 4 is coated to obtain a non-reflection face. The reflection means 5 rectangularly positioned such as an external mirror or a grating is arranged on the midway to the reciprocating course of beams. When driving currents I1 are flowed in the arrow (a), (b) direction, luminous wavelength is determined as lambda1 in response to I1. Consequently, a space L between the cleavage plane 3 and the external mirror 5 is adjusted and moved so as to be set to the integer times of lambda1. Accordingly, a mode-hop phenomenon is eliminated, and laser oscillation extending over the wide wavelength range can be conducted.
JP2853581A 1981-02-27 1981-02-27 Semiconductor laser Granted JPS57143887A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2853581A JPS57143887A (en) 1981-02-27 1981-02-27 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2853581A JPS57143887A (en) 1981-02-27 1981-02-27 Semiconductor laser

Publications (2)

Publication Number Publication Date
JPS57143887A true JPS57143887A (en) 1982-09-06
JPS6258556B2 JPS6258556B2 (en) 1987-12-07

Family

ID=12251355

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2853581A Granted JPS57143887A (en) 1981-02-27 1981-02-27 Semiconductor laser

Country Status (1)

Country Link
JP (1) JPS57143887A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11745337B2 (en) 2019-08-29 2023-09-05 Kabushiki Kaisha Toshiba Handling device, control device, and computer program product

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50120991A (en) * 1974-03-08 1975-09-22
JPS54157488A (en) * 1978-06-02 1979-12-12 Nippon Telegr & Teleph Corp <Ntt> Control unit for laser diode oscillation wave length

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50120991A (en) * 1974-03-08 1975-09-22
JPS54157488A (en) * 1978-06-02 1979-12-12 Nippon Telegr & Teleph Corp <Ntt> Control unit for laser diode oscillation wave length

Also Published As

Publication number Publication date
JPS6258556B2 (en) 1987-12-07

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