JPS559480A - Large light output, lateral mode of semiconductor laser element - Google Patents

Large light output, lateral mode of semiconductor laser element

Info

Publication number
JPS559480A
JPS559480A JP8313978A JP8313978A JPS559480A JP S559480 A JPS559480 A JP S559480A JP 8313978 A JP8313978 A JP 8313978A JP 8313978 A JP8313978 A JP 8313978A JP S559480 A JPS559480 A JP S559480A
Authority
JP
Japan
Prior art keywords
region
layer
type
light output
excitation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8313978A
Other languages
Japanese (ja)
Other versions
JPS6244439B2 (en
Inventor
Hiroo Yonezu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8313978A priority Critical patent/JPS559480A/en
Publication of JPS559480A publication Critical patent/JPS559480A/en
Publication of JPS6244439B2 publication Critical patent/JPS6244439B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE: To stabilize light output by permitting a linear excitation region perpendicular to a cleavage plane not to directly wih a reflection plane, and lessening an effective band gap of the excitation region than that of the non-excitation region in the active layers present therebetween.
CONSTITUTION: After growing a N-type of Al0.3Ga0.7As layer 2, a N-type of Ga As active layer, and a N-type of Al0.3Ga0.7As layer 4 progressively on a N-type of Ga As substrate 1, about one-half side of the layer 4 is covered with a Si3N4 film 5, and in the exposed region is formed a Zn diffusion region 6 entered into the layer 2. On the front of the regin 6 is then formed a Zn-implanted region 7 having a hole density of about 5×1018/cm3 to promote the laser oscillation. In this manner, the linear region 10 between both regions 4 and 6 is made of a laser oscillation region, and in its end is formed a non-excitation region 12 adjacent to the reflection plane 9. In this constitution, the effective band gap of the region 10 is lessened than that of the region 12.
COPYRIGHT: (C)1980,JPO&Japio
JP8313978A 1978-07-07 1978-07-07 Large light output, lateral mode of semiconductor laser element Granted JPS559480A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8313978A JPS559480A (en) 1978-07-07 1978-07-07 Large light output, lateral mode of semiconductor laser element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8313978A JPS559480A (en) 1978-07-07 1978-07-07 Large light output, lateral mode of semiconductor laser element

Publications (2)

Publication Number Publication Date
JPS559480A true JPS559480A (en) 1980-01-23
JPS6244439B2 JPS6244439B2 (en) 1987-09-21

Family

ID=13793862

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8313978A Granted JPS559480A (en) 1978-07-07 1978-07-07 Large light output, lateral mode of semiconductor laser element

Country Status (1)

Country Link
JP (1) JPS559480A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS589386A (en) * 1981-07-08 1983-01-19 Mitsubishi Electric Corp Semiconductor laser device
JPH02239680A (en) * 1989-03-13 1990-09-21 Sharp Corp Semiconductor laser device and its manufacture

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4932589A (en) * 1972-07-21 1974-03-25
JPS4938593A (en) * 1972-08-11 1974-04-10
JPS4994292A (en) * 1973-01-11 1974-09-06

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4932589A (en) * 1972-07-21 1974-03-25
JPS4938593A (en) * 1972-08-11 1974-04-10
JPS4994292A (en) * 1973-01-11 1974-09-06

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS589386A (en) * 1981-07-08 1983-01-19 Mitsubishi Electric Corp Semiconductor laser device
JPH02239680A (en) * 1989-03-13 1990-09-21 Sharp Corp Semiconductor laser device and its manufacture

Also Published As

Publication number Publication date
JPS6244439B2 (en) 1987-09-21

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