JPS55157228A - Method of growing epitaxially in liquid phase - Google Patents

Method of growing epitaxially in liquid phase

Info

Publication number
JPS55157228A
JPS55157228A JP6634379A JP6634379A JPS55157228A JP S55157228 A JPS55157228 A JP S55157228A JP 6634379 A JP6634379 A JP 6634379A JP 6634379 A JP6634379 A JP 6634379A JP S55157228 A JPS55157228 A JP S55157228A
Authority
JP
Japan
Prior art keywords
growing
liquid
substrate
solute
laminate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6634379A
Other languages
Japanese (ja)
Inventor
Hiroshi Hayashi
Kazuhisa Murata
Takuo Takenaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP6634379A priority Critical patent/JPS55157228A/en
Publication of JPS55157228A publication Critical patent/JPS55157228A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/10—Controlling or regulating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To restrict occurrence of defect in a laminate in a growing layer by providing supersaturation degree in melting growing liquid directly before starting the growing step in a temperature difference process. CONSTITUTION:Melting growing liquid is retained at predetermined temperature for predetermined time to completely saturate solute in the growing liquid, and a substrate is brought into contact with the growing liquid to cool the liquid to the degree that fine crystals are not deposited in the liquid or at the periphery immediately before starting the growing step. Thus, the solute is oversaturated in the growing liquid, and the substrate is further brought into contact with the growing liquid to retain the predetermined growing temperature. As a result, compound semiconductor having different composition from the substrate is grown in single or more layers so as to restrict the occurrence of the defect in the laminate in the growing crystal.
JP6634379A 1979-05-28 1979-05-28 Method of growing epitaxially in liquid phase Pending JPS55157228A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6634379A JPS55157228A (en) 1979-05-28 1979-05-28 Method of growing epitaxially in liquid phase

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6634379A JPS55157228A (en) 1979-05-28 1979-05-28 Method of growing epitaxially in liquid phase

Publications (1)

Publication Number Publication Date
JPS55157228A true JPS55157228A (en) 1980-12-06

Family

ID=13313110

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6634379A Pending JPS55157228A (en) 1979-05-28 1979-05-28 Method of growing epitaxially in liquid phase

Country Status (1)

Country Link
JP (1) JPS55157228A (en)

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