JPS5710922A - Sliding type liquid phase epitaxial growth device - Google Patents

Sliding type liquid phase epitaxial growth device

Info

Publication number
JPS5710922A
JPS5710922A JP8573380A JP8573380A JPS5710922A JP S5710922 A JPS5710922 A JP S5710922A JP 8573380 A JP8573380 A JP 8573380A JP 8573380 A JP8573380 A JP 8573380A JP S5710922 A JPS5710922 A JP S5710922A
Authority
JP
Japan
Prior art keywords
growing
crystal substrate
molten liquid
crystalization
passage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8573380A
Other languages
Japanese (ja)
Other versions
JPS628008B2 (en
Inventor
Ryoichi Hirano
Jun Ishii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP8573380A priority Critical patent/JPS5710922A/en
Publication of JPS5710922A publication Critical patent/JPS5710922A/en
Publication of JPS628008B2 publication Critical patent/JPS628008B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/063—Sliding boat system

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE:To provide a uniform growing of epitaxial layer having a superior characteristic of crystalization and flatness by a method wherein a crystal substrate plate for holding crystalized materials is arranged in a passage for molten liquid to be pushed into a growing chamber from a liquid tank by a pressing block. CONSTITUTION:Growing crystal substrate plates 11, 12 are provided in a growing chamber 10, a groove 16 and a crystal substrate plate 17 for holding the crystalization material are arranged at a part of the growing slider 9 having a passage 13 and nonliquid tank 15 corresponding to a passage for molten liquid pushed from the liquid tank to the growing chamber 10 by the pressing block, while the crystalized material present in the molten liquid is held and removed so as to cause over- saturated molten liquid to be saturated and melted. Thereby, it is possible to make a uniformly growing epitaxial layer having a better crystalization and flatness even in a crystal substrate placed thereon, and further a thickness of the film in a range of submicron order may easily be controlled.
JP8573380A 1980-06-24 1980-06-24 Sliding type liquid phase epitaxial growth device Granted JPS5710922A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8573380A JPS5710922A (en) 1980-06-24 1980-06-24 Sliding type liquid phase epitaxial growth device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8573380A JPS5710922A (en) 1980-06-24 1980-06-24 Sliding type liquid phase epitaxial growth device

Publications (2)

Publication Number Publication Date
JPS5710922A true JPS5710922A (en) 1982-01-20
JPS628008B2 JPS628008B2 (en) 1987-02-20

Family

ID=13867034

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8573380A Granted JPS5710922A (en) 1980-06-24 1980-06-24 Sliding type liquid phase epitaxial growth device

Country Status (1)

Country Link
JP (1) JPS5710922A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111727094A (en) * 2018-03-22 2020-09-29 Ntn株式会社 Machine component and method for manufacturing same

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015145834A1 (en) 2014-03-24 2015-10-01 株式会社スクウェア・エニックス Interactive system, terminal device, server device, control method, program, and recording medium

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111727094A (en) * 2018-03-22 2020-09-29 Ntn株式会社 Machine component and method for manufacturing same

Also Published As

Publication number Publication date
JPS628008B2 (en) 1987-02-20

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