JPS55150225A - Method of correcting white spot fault of photomask - Google Patents

Method of correcting white spot fault of photomask

Info

Publication number
JPS55150225A
JPS55150225A JP5711379A JP5711379A JPS55150225A JP S55150225 A JPS55150225 A JP S55150225A JP 5711379 A JP5711379 A JP 5711379A JP 5711379 A JP5711379 A JP 5711379A JP S55150225 A JPS55150225 A JP S55150225A
Authority
JP
Japan
Prior art keywords
fault
white spot
film
produce
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5711379A
Other languages
Japanese (ja)
Other versions
JPS627540B2 (en
Inventor
Takeoki Miyauchi
Mikio Hongo
Masao Mitani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP5711379A priority Critical patent/JPS55150225A/en
Publication of JPS55150225A publication Critical patent/JPS55150225A/en
Publication of JPS627540B2 publication Critical patent/JPS627540B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Abstract

PURPOSE:To produce an effective shadow at a projected image by irradiating an ion beam to a white spot fault caused by partly lacking a pattern film formed on a glass substrate to rough the exposed surface of the substrate when correcting the white spot fault. CONSTITUTION:When a Cr film 2 is coated to become a pattern film on a glass substrate 1, the Cr sometimes lacks to produce a white spot fault 3 thereon. When this fault 3 occurs, it is corrected as below. That is, an ion beam 25 is selectively rirradiated to the exposed portion caused by the lack 3 of the substrate 1 to form a wavy rough surface 26 thereon so as to produce a shadow similar to the presence of the Cr film thereon. When the fault 3 is very small, the beam 25 is throttled as a spot to form a circular deep recess 27 thereon to scatter the irradiated light 27 to carry out the similar effect that the film 2 is presented thereon in the same manner.
JP5711379A 1979-05-11 1979-05-11 Method of correcting white spot fault of photomask Granted JPS55150225A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5711379A JPS55150225A (en) 1979-05-11 1979-05-11 Method of correcting white spot fault of photomask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5711379A JPS55150225A (en) 1979-05-11 1979-05-11 Method of correcting white spot fault of photomask

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP61213822A Division JPS6284518A (en) 1986-09-12 1986-09-12 Processing apparatus by ion beam
JP61213821A Division JPS6285253A (en) 1986-09-12 1986-09-12 Correcting method for defect of mask

Publications (2)

Publication Number Publication Date
JPS55150225A true JPS55150225A (en) 1980-11-22
JPS627540B2 JPS627540B2 (en) 1987-02-18

Family

ID=13046463

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5711379A Granted JPS55150225A (en) 1979-05-11 1979-05-11 Method of correcting white spot fault of photomask

Country Status (1)

Country Link
JP (1) JPS55150225A (en)

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55154733A (en) * 1979-05-21 1980-12-02 Oki Electric Ind Co Ltd Method of correcting defective mask
JPS5856332A (en) * 1981-09-30 1983-04-04 Hitachi Ltd Correction of defect in mask and device thereof
JPS5893052A (en) * 1981-11-30 1983-06-02 Seiko Epson Corp Photomask
JPS58196020A (en) * 1982-05-12 1983-11-15 Hitachi Ltd Inspection of mask for defect, correcting method and its apparatus
JPS59168652A (en) * 1983-03-16 1984-09-22 Hitachi Ltd Method and apparatus for correcting element
JPS59208830A (en) * 1983-05-13 1984-11-27 Hitachi Ltd Ion beam processing method and device thereof
FR2547111A1 (en) * 1983-05-31 1984-12-07 American Telephone & Telegraph METHOD FOR CORRECTING LITHOGRAPHIC MASKS
JPS6094728A (en) * 1983-10-27 1985-05-27 Seiko Instr & Electronics Ltd Processing device using charged particle beam
JPS6186753A (en) * 1984-10-03 1986-05-02 Seiko Instr & Electronics Ltd Method for detecting termination of mask fault correction
JPS6166349U (en) * 1984-10-03 1986-05-07
JPS61113234A (en) * 1984-11-08 1986-05-31 Jeol Ltd Method for correcting mask defect
JPS6281640A (en) * 1985-10-07 1987-04-15 Seiko Instr & Electronics Ltd Mask repair device
JPS62156958U (en) * 1986-03-28 1987-10-05
JPS62237454A (en) * 1986-04-09 1987-10-17 Hitachi Ltd Method for correcting white spot defects of photomask with ion beams
JPS6310162A (en) * 1986-06-30 1988-01-16 Hoya Corp Photomask
JPS63170940A (en) * 1987-12-02 1988-07-14 Hitachi Ltd Correction of device
JPS63296241A (en) * 1987-12-02 1988-12-02 Hitachi Ltd Element correction device
JPS63301952A (en) * 1986-12-26 1988-12-08 Seiko Instr & Electronics Ltd Method and device for repairing mask
JPH01124856A (en) * 1988-09-30 1989-05-17 Hitachi Ltd Method for correcting defect of mask
JPH01124857A (en) * 1988-09-30 1989-05-17 Hitachi Ltd Ion beam processing device
JPH0260A (en) * 1989-05-12 1990-01-05 Hitachi Ltd Method and device for ion beam processing
USRE33193E (en) * 1981-09-30 1990-04-03 Hitachi, Ltd. Ion beam processing apparatus and method of correcting mask defects
US5350649A (en) * 1988-11-22 1994-09-27 Hitachi, Ltd. Mask for manufacturing semiconductor device and method of manufacture thereof

Cited By (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5751255B2 (en) * 1979-05-21 1982-11-01
JPS55154733A (en) * 1979-05-21 1980-12-02 Oki Electric Ind Co Ltd Method of correcting defective mask
JPH0425531B2 (en) * 1981-09-30 1992-05-01 Hitachi Ltd
JPS5856332A (en) * 1981-09-30 1983-04-04 Hitachi Ltd Correction of defect in mask and device thereof
USRE33193E (en) * 1981-09-30 1990-04-03 Hitachi, Ltd. Ion beam processing apparatus and method of correcting mask defects
JPS5893052A (en) * 1981-11-30 1983-06-02 Seiko Epson Corp Photomask
JPH0428097B2 (en) * 1982-05-12 1992-05-13 Hitachi Ltd
JPS58196020A (en) * 1982-05-12 1983-11-15 Hitachi Ltd Inspection of mask for defect, correcting method and its apparatus
JPS59168652A (en) * 1983-03-16 1984-09-22 Hitachi Ltd Method and apparatus for correcting element
JPH0514416B2 (en) * 1983-03-16 1993-02-25 Hitachi Ltd
JPS59208830A (en) * 1983-05-13 1984-11-27 Hitachi Ltd Ion beam processing method and device thereof
JPS6260699B2 (en) * 1983-05-13 1987-12-17 Hitachi Ltd
FR2547111A1 (en) * 1983-05-31 1984-12-07 American Telephone & Telegraph METHOD FOR CORRECTING LITHOGRAPHIC MASKS
US4548883A (en) * 1983-05-31 1985-10-22 At&T Bell Laboratories Correction of lithographic masks
JPS6094728A (en) * 1983-10-27 1985-05-27 Seiko Instr & Electronics Ltd Processing device using charged particle beam
JPH0132494B2 (en) * 1983-10-27 1989-07-04 Seiko Denshi Kogyo Kk
JPS6312346Y2 (en) * 1984-10-03 1988-04-08
JPS6323541B2 (en) * 1984-10-03 1988-05-17 Seiko Denshi Kogyo Kk
JPS6166349U (en) * 1984-10-03 1986-05-07
JPS6186753A (en) * 1984-10-03 1986-05-02 Seiko Instr & Electronics Ltd Method for detecting termination of mask fault correction
JPS61113234A (en) * 1984-11-08 1986-05-31 Jeol Ltd Method for correcting mask defect
JPS6281640A (en) * 1985-10-07 1987-04-15 Seiko Instr & Electronics Ltd Mask repair device
JPS62156958U (en) * 1986-03-28 1987-10-05
JPH0121307Y2 (en) * 1986-03-28 1989-06-26
JPS62237454A (en) * 1986-04-09 1987-10-17 Hitachi Ltd Method for correcting white spot defects of photomask with ion beams
JPS6310162A (en) * 1986-06-30 1988-01-16 Hoya Corp Photomask
JPH0515253B2 (en) * 1986-06-30 1993-03-01 Hoya Corp
JPS63301952A (en) * 1986-12-26 1988-12-08 Seiko Instr & Electronics Ltd Method and device for repairing mask
JPH0553259B2 (en) * 1986-12-26 1993-08-09 Seiko Instr & Electronics
JPS63296241A (en) * 1987-12-02 1988-12-02 Hitachi Ltd Element correction device
JPS63170940A (en) * 1987-12-02 1988-07-14 Hitachi Ltd Correction of device
JPH01124856A (en) * 1988-09-30 1989-05-17 Hitachi Ltd Method for correcting defect of mask
JPH0427540B2 (en) * 1988-09-30 1992-05-12 Hitachi Ltd
JPH01124857A (en) * 1988-09-30 1989-05-17 Hitachi Ltd Ion beam processing device
JPH0427539B2 (en) * 1988-09-30 1992-05-12 Hitachi Ltd
US5484671A (en) * 1988-11-22 1996-01-16 Hitachi, Ltd. Mask for manufacturing semiconductor device and method of manufacture thereof
US5350649A (en) * 1988-11-22 1994-09-27 Hitachi, Ltd. Mask for manufacturing semiconductor device and method of manufacture thereof
US5830606A (en) * 1988-11-22 1998-11-03 Hitachi, Ltd. Mask for manufacturing semiconductor device and method of manufacture thereof
US5948574A (en) * 1988-11-22 1999-09-07 Hitachi, Ltd. Mask for manufacturing semiconductor device and method of manufacture thereof
US6106981A (en) * 1988-11-22 2000-08-22 Hitachi, Ltd. Mask for manufacturing semiconductor device and method of manufacture thereof
US6420075B1 (en) 1988-11-22 2002-07-16 Hitachi, Ltd. Mask for manufacturing semiconductor device and method of manufacture thereof
US6458497B2 (en) 1988-11-22 2002-10-01 Hitachi, Ltd. Mask for manufacturing semiconductor device and method of manufacture thereof
US6548213B2 (en) 1988-11-22 2003-04-15 Hitachi, Ltd. Mask for manufacturing semiconductor device and method of manufacture thereof
US6733933B2 (en) 1988-11-22 2004-05-11 Renesas Technology Corporation Mask for manufacturing semiconductor device and method of manufacture thereof
US7008736B2 (en) 1988-11-22 2006-03-07 Renesas Technology Corp. Semiconductor integrated circuit device fabrication method using a mask having a phase shifting film covering region and an opening region
JPH0429052B2 (en) * 1989-05-12 1992-05-15 Hitachi Ltd
JPH0260A (en) * 1989-05-12 1990-01-05 Hitachi Ltd Method and device for ion beam processing

Also Published As

Publication number Publication date
JPS627540B2 (en) 1987-02-18

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