JPS55104998A - Production of silicon carbide crystal layer - Google Patents
Production of silicon carbide crystal layerInfo
- Publication number
- JPS55104998A JPS55104998A JP1019979A JP1019979A JPS55104998A JP S55104998 A JPS55104998 A JP S55104998A JP 1019979 A JP1019979 A JP 1019979A JP 1019979 A JP1019979 A JP 1019979A JP S55104998 A JPS55104998 A JP S55104998A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- sic
- stand
- substrate
- melt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
PURPOSE: To perform the title production while controlling the SiC crystal form, the layer thickness, etc. by melting an Si substrate provided with a formed SiC layer on a sample stand having an SiC surface layer and holding the temp. of the latter SiC layer higher than that of the former.
CONSTITUTION: On Si substrate 2 SiC primary layer 4 is formed by vapor phase growing or other method. Substrate 2 is placed on sample stand 10 having SiC surface layer 6, and by heating stand 10 substrate 2 is melted to form Si melt 12. This state is maintained for a fixed time while holding the temp. of stand 10 higher than that of layer 4, whereby SiC secondary layer 14 is deposited on the back side of layer 4 from melt 12. It is considered that layer 6 on the stand 10 surface melts in melt 12 and deposits on lower temp. side layer 4. Because of liquid phase grown crystal, layer 14 has superior crystal perfectness compared to vapor phase grown crystal.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1019979A JPS5830280B2 (en) | 1979-01-29 | 1979-01-29 | Method for manufacturing silicon carbide crystal layer |
DE3002671A DE3002671C2 (en) | 1979-01-25 | 1980-01-25 | Process for making a silicon carbide substrate |
US06/369,911 US4582561A (en) | 1979-01-25 | 1982-04-19 | Method for making a silicon carbide substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1019979A JPS5830280B2 (en) | 1979-01-29 | 1979-01-29 | Method for manufacturing silicon carbide crystal layer |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55104998A true JPS55104998A (en) | 1980-08-11 |
JPS5830280B2 JPS5830280B2 (en) | 1983-06-28 |
Family
ID=11743600
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1019979A Expired JPS5830280B2 (en) | 1979-01-25 | 1979-01-29 | Method for manufacturing silicon carbide crystal layer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5830280B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55144500A (en) * | 1979-04-28 | 1980-11-11 | Sharp Corp | Producing silicon carbide crystal layer |
JPS55149191A (en) * | 1979-05-07 | 1980-11-20 | Sharp Corp | Manufacture of silicon carbide crystal layer |
US5471946A (en) * | 1992-10-13 | 1995-12-05 | Cs Halbleiter-Und Solartechnologie Gmbh | Method for producing a wafer with a monocrystalline silicon carbide layer |
-
1979
- 1979-01-29 JP JP1019979A patent/JPS5830280B2/en not_active Expired
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55144500A (en) * | 1979-04-28 | 1980-11-11 | Sharp Corp | Producing silicon carbide crystal layer |
JPS5838400B2 (en) * | 1979-04-28 | 1983-08-23 | シャープ株式会社 | Method for manufacturing silicon carbide crystal layer |
JPS55149191A (en) * | 1979-05-07 | 1980-11-20 | Sharp Corp | Manufacture of silicon carbide crystal layer |
US5471946A (en) * | 1992-10-13 | 1995-12-05 | Cs Halbleiter-Und Solartechnologie Gmbh | Method for producing a wafer with a monocrystalline silicon carbide layer |
Also Published As
Publication number | Publication date |
---|---|
JPS5830280B2 (en) | 1983-06-28 |
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