JPS55104998A - Production of silicon carbide crystal layer - Google Patents

Production of silicon carbide crystal layer

Info

Publication number
JPS55104998A
JPS55104998A JP1019979A JP1019979A JPS55104998A JP S55104998 A JPS55104998 A JP S55104998A JP 1019979 A JP1019979 A JP 1019979A JP 1019979 A JP1019979 A JP 1019979A JP S55104998 A JPS55104998 A JP S55104998A
Authority
JP
Japan
Prior art keywords
layer
sic
stand
substrate
melt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1019979A
Other languages
Japanese (ja)
Other versions
JPS5830280B2 (en
Inventor
Toshiki Inooku
Takeshi Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP1019979A priority Critical patent/JPS5830280B2/en
Priority to DE3002671A priority patent/DE3002671C2/en
Publication of JPS55104998A publication Critical patent/JPS55104998A/en
Priority to US06/369,911 priority patent/US4582561A/en
Publication of JPS5830280B2 publication Critical patent/JPS5830280B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE: To perform the title production while controlling the SiC crystal form, the layer thickness, etc. by melting an Si substrate provided with a formed SiC layer on a sample stand having an SiC surface layer and holding the temp. of the latter SiC layer higher than that of the former.
CONSTITUTION: On Si substrate 2 SiC primary layer 4 is formed by vapor phase growing or other method. Substrate 2 is placed on sample stand 10 having SiC surface layer 6, and by heating stand 10 substrate 2 is melted to form Si melt 12. This state is maintained for a fixed time while holding the temp. of stand 10 higher than that of layer 4, whereby SiC secondary layer 14 is deposited on the back side of layer 4 from melt 12. It is considered that layer 6 on the stand 10 surface melts in melt 12 and deposits on lower temp. side layer 4. Because of liquid phase grown crystal, layer 14 has superior crystal perfectness compared to vapor phase grown crystal.
COPYRIGHT: (C)1980,JPO&Japio
JP1019979A 1979-01-25 1979-01-29 Method for manufacturing silicon carbide crystal layer Expired JPS5830280B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP1019979A JPS5830280B2 (en) 1979-01-29 1979-01-29 Method for manufacturing silicon carbide crystal layer
DE3002671A DE3002671C2 (en) 1979-01-25 1980-01-25 Process for making a silicon carbide substrate
US06/369,911 US4582561A (en) 1979-01-25 1982-04-19 Method for making a silicon carbide substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1019979A JPS5830280B2 (en) 1979-01-29 1979-01-29 Method for manufacturing silicon carbide crystal layer

Publications (2)

Publication Number Publication Date
JPS55104998A true JPS55104998A (en) 1980-08-11
JPS5830280B2 JPS5830280B2 (en) 1983-06-28

Family

ID=11743600

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1019979A Expired JPS5830280B2 (en) 1979-01-25 1979-01-29 Method for manufacturing silicon carbide crystal layer

Country Status (1)

Country Link
JP (1) JPS5830280B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55144500A (en) * 1979-04-28 1980-11-11 Sharp Corp Producing silicon carbide crystal layer
JPS55149191A (en) * 1979-05-07 1980-11-20 Sharp Corp Manufacture of silicon carbide crystal layer
US5471946A (en) * 1992-10-13 1995-12-05 Cs Halbleiter-Und Solartechnologie Gmbh Method for producing a wafer with a monocrystalline silicon carbide layer

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55144500A (en) * 1979-04-28 1980-11-11 Sharp Corp Producing silicon carbide crystal layer
JPS5838400B2 (en) * 1979-04-28 1983-08-23 シャープ株式会社 Method for manufacturing silicon carbide crystal layer
JPS55149191A (en) * 1979-05-07 1980-11-20 Sharp Corp Manufacture of silicon carbide crystal layer
US5471946A (en) * 1992-10-13 1995-12-05 Cs Halbleiter-Und Solartechnologie Gmbh Method for producing a wafer with a monocrystalline silicon carbide layer

Also Published As

Publication number Publication date
JPS5830280B2 (en) 1983-06-28

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