JPS55138834A - Dry etching method - Google Patents
Dry etching methodInfo
- Publication number
- JPS55138834A JPS55138834A JP4531979A JP4531979A JPS55138834A JP S55138834 A JPS55138834 A JP S55138834A JP 4531979 A JP4531979 A JP 4531979A JP 4531979 A JP4531979 A JP 4531979A JP S55138834 A JPS55138834 A JP S55138834A
- Authority
- JP
- Japan
- Prior art keywords
- bromine
- iodine
- gas
- fluoride
- fluorine
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001312 dry etching Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 title abstract 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 abstract 4
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 abstract 4
- 229910052794 bromium Inorganic materials 0.000 abstract 4
- 229910052740 iodine Inorganic materials 0.000 abstract 4
- 239000011630 iodine Substances 0.000 abstract 4
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 abstract 4
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 abstract 3
- 229910052731 fluorine Inorganic materials 0.000 abstract 3
- 239000011737 fluorine Substances 0.000 abstract 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 239000000126 substance Substances 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To enable fluoride to selectively etch a volatile substance layer without any undercut by employing a gas having a molecular structure of the type that a part of the fluorine of carbon fluoride is substituted for bromine or iodine for an etching gas. CONSTITUTION:A volatile substance layer 2 coated on an SiO2 base 3 is selectively etched with an SiO2 as a mask 1 by fluoride. In a dry etching method therefor, a mixture gas of gas having a molecular structure of the type that a part of the fluorine of carbon fluoride is substituted for bromine or iodine or that carbon fluoride and a part of the bromine, iodine of fluorine of the carbon fluoride is substituted for bromine or iodine for an etching gas.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4531979A JPS55138834A (en) | 1979-04-16 | 1979-04-16 | Dry etching method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4531979A JPS55138834A (en) | 1979-04-16 | 1979-04-16 | Dry etching method |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20598182A Division JPS58100684A (en) | 1982-11-26 | 1982-11-26 | Dry etching method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55138834A true JPS55138834A (en) | 1980-10-30 |
JPS5713137B2 JPS5713137B2 (en) | 1982-03-15 |
Family
ID=12715976
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4531979A Granted JPS55138834A (en) | 1979-04-16 | 1979-04-16 | Dry etching method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55138834A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5157091A (en) * | 1987-10-07 | 1992-10-20 | Murahara Masataka | Ultraviolet-absorbing polymer material and photoetching process |
JPH1187324A (en) * | 1997-09-04 | 1999-03-30 | Hitachi Ltd | Plasma processing method |
WO2018225661A1 (en) * | 2017-06-08 | 2018-12-13 | 昭和電工株式会社 | Etching method |
-
1979
- 1979-04-16 JP JP4531979A patent/JPS55138834A/en active Granted
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5157091A (en) * | 1987-10-07 | 1992-10-20 | Murahara Masataka | Ultraviolet-absorbing polymer material and photoetching process |
JPH1187324A (en) * | 1997-09-04 | 1999-03-30 | Hitachi Ltd | Plasma processing method |
WO2018225661A1 (en) * | 2017-06-08 | 2018-12-13 | 昭和電工株式会社 | Etching method |
JPWO2018225661A1 (en) * | 2017-06-08 | 2020-04-09 | 昭和電工株式会社 | Etching method |
US11164751B2 (en) | 2017-06-08 | 2021-11-02 | Showa Denko K.K. | Etching method |
Also Published As
Publication number | Publication date |
---|---|
JPS5713137B2 (en) | 1982-03-15 |
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