JPS551139A - Current supply type semiconductor light-emitting device - Google Patents

Abstract

PURPOSE: For easy manufacture at a low cost, to make a P-N junction of a semiconductor substrate whose Fermi-level in energy band structure is one-sidedly present on conduction or valence electron side on one hand and a non-crystalline semiconductor whose Fermi-level is present almost at the center of conduction and valence electron bands on the other.

CONSTITUTION: The P- or N-type semiconductor of the compounds belonging to Families III-V of II-VI or which conductor the Fermi-level is one-sidedly present on conduction or valence electron band side is used as the substrate 11 of a device. Next, the N- or P-type (contrary to said substrate 11) non-crystalline semiconductor layer 12 of the same compounds as said substrate 11 of which semiconductor the Fermi-level is present almost at the center of the conduction and valence electron bands is formed on said substrate 11 P-N junction 15 is made between said semiconductors 11 and 12. Thereafter, the surface of said junction 15 is covered with SiO₂ film 19, and electrodes 14 and 13 are fitted over the whole surface and on the reverse side respectively of said junction 15. Thus, high voltage-current characteristic can be obtained at a low cost.

COPYRIGHT: (C)1980,JPO&Japio