JPS55138280A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS55138280A JPS55138280A JP4494279A JP4494279A JPS55138280A JP S55138280 A JPS55138280 A JP S55138280A JP 4494279 A JP4494279 A JP 4494279A JP 4494279 A JP4494279 A JP 4494279A JP S55138280 A JPS55138280 A JP S55138280A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- junction
- junctions
- electrode
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 239000004020 conductor Substances 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000010030 laminating Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8611—Planar PN junction diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To miniaturize a varistor by laminating at least three pn-junctions perpendicularly inside a semiconductor substrate, attaching an electrode to the top layer and the bottom layer, and shorting the exposed surface on the even pn-junctions by a conductor. CONSTITUTION:One side of an n-type semiconductor substrate 8 is tripple diffused, and a p-layer 9, an n-layer 10 and a p-layer 11 are formed. A backward junction J2 is short-circuited at the Ag film 4a provided on the junction end J2. Films 6 and 7 are SiO2. When a forward current i is applied to electrode 1a junction J3 Ag film 4a junction J1 electrode 5. With such a structure as above-mentioned, a diffusion area corresponding to the number of junctions as with the case of a flat diffusion structure, so the coefficient of utilization of substrate area is greatly raised and the chip size is not expanded.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4494279A JPS55138280A (en) | 1979-04-12 | 1979-04-12 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4494279A JPS55138280A (en) | 1979-04-12 | 1979-04-12 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS55138280A true JPS55138280A (en) | 1980-10-28 |
Family
ID=12705531
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4494279A Pending JPS55138280A (en) | 1979-04-12 | 1979-04-12 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55138280A (en) |
-
1979
- 1979-04-12 JP JP4494279A patent/JPS55138280A/en active Pending
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