JPS5499584A - Silicon gate complementary mos integrated circuit - Google Patents
Silicon gate complementary mos integrated circuitInfo
- Publication number
- JPS5499584A JPS5499584A JP15317177A JP15317177A JPS5499584A JP S5499584 A JPS5499584 A JP S5499584A JP 15317177 A JP15317177 A JP 15317177A JP 15317177 A JP15317177 A JP 15317177A JP S5499584 A JPS5499584 A JP S5499584A
- Authority
- JP
- Japan
- Prior art keywords
- resistance
- layer
- film
- ratch
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 230000000295 complement effect Effects 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
- 239000013078 crystal Substances 0.000 abstract 2
- 230000000694 effects Effects 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 1
- 230000003071 parasitic effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
Abstract
PURPOSE:To prevent generation of the parasitic MOS transistor with the same effect secured as the resistance connected to the outside by forming the ratch-up preventing resistance on the field oxide film via poly-crystal Si. CONSTITUTION:Field oxide film 106 is coated on semiconductor substrate 104; poly crystal Si layer 114 containing the impurity is stacked at the center part of film 106; and the entire surface is covered again with field oixde film 115. Then the opening is provided to film 115 positioned across layer 114, and electrode 112 and 113 connecting to layer 114 are attached through the opening. Thus, layer 114 between these electrodes is used as ratch-up preventing resistance 111. In such way, the resistance parts connecting to the outside becomes unnecessary, thus reducing the cost and increasing the reliability. In the same way, the same effect cab be secured if the ratch-up preventing diode, in place of the resistance, is provided on the field oxide film.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15317177A JPS5499584A (en) | 1977-12-20 | 1977-12-20 | Silicon gate complementary mos integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15317177A JPS5499584A (en) | 1977-12-20 | 1977-12-20 | Silicon gate complementary mos integrated circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5499584A true JPS5499584A (en) | 1979-08-06 |
Family
ID=15556595
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15317177A Pending JPS5499584A (en) | 1977-12-20 | 1977-12-20 | Silicon gate complementary mos integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5499584A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57157558A (en) * | 1981-03-23 | 1982-09-29 | Fujitsu Ltd | Complementary mis integrated circuit device |
-
1977
- 1977-12-20 JP JP15317177A patent/JPS5499584A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57157558A (en) * | 1981-03-23 | 1982-09-29 | Fujitsu Ltd | Complementary mis integrated circuit device |
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