JPS5499584A - Silicon gate complementary mos integrated circuit - Google Patents

Silicon gate complementary mos integrated circuit

Info

Publication number
JPS5499584A
JPS5499584A JP15317177A JP15317177A JPS5499584A JP S5499584 A JPS5499584 A JP S5499584A JP 15317177 A JP15317177 A JP 15317177A JP 15317177 A JP15317177 A JP 15317177A JP S5499584 A JPS5499584 A JP S5499584A
Authority
JP
Japan
Prior art keywords
resistance
layer
film
ratch
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15317177A
Other languages
Japanese (ja)
Inventor
Yasuhiko Nishikubo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Citizen Watch Co Ltd
Original Assignee
Citizen Watch Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Citizen Watch Co Ltd filed Critical Citizen Watch Co Ltd
Priority to JP15317177A priority Critical patent/JPS5499584A/en
Publication of JPS5499584A publication Critical patent/JPS5499584A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)

Abstract

PURPOSE:To prevent generation of the parasitic MOS transistor with the same effect secured as the resistance connected to the outside by forming the ratch-up preventing resistance on the field oxide film via poly-crystal Si. CONSTITUTION:Field oxide film 106 is coated on semiconductor substrate 104; poly crystal Si layer 114 containing the impurity is stacked at the center part of film 106; and the entire surface is covered again with field oixde film 115. Then the opening is provided to film 115 positioned across layer 114, and electrode 112 and 113 connecting to layer 114 are attached through the opening. Thus, layer 114 between these electrodes is used as ratch-up preventing resistance 111. In such way, the resistance parts connecting to the outside becomes unnecessary, thus reducing the cost and increasing the reliability. In the same way, the same effect cab be secured if the ratch-up preventing diode, in place of the resistance, is provided on the field oxide film.
JP15317177A 1977-12-20 1977-12-20 Silicon gate complementary mos integrated circuit Pending JPS5499584A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15317177A JPS5499584A (en) 1977-12-20 1977-12-20 Silicon gate complementary mos integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15317177A JPS5499584A (en) 1977-12-20 1977-12-20 Silicon gate complementary mos integrated circuit

Publications (1)

Publication Number Publication Date
JPS5499584A true JPS5499584A (en) 1979-08-06

Family

ID=15556595

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15317177A Pending JPS5499584A (en) 1977-12-20 1977-12-20 Silicon gate complementary mos integrated circuit

Country Status (1)

Country Link
JP (1) JPS5499584A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57157558A (en) * 1981-03-23 1982-09-29 Fujitsu Ltd Complementary mis integrated circuit device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57157558A (en) * 1981-03-23 1982-09-29 Fujitsu Ltd Complementary mis integrated circuit device

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