JPS5493965A - Semiconductor vessel - Google Patents

Semiconductor vessel

Info

Publication number
JPS5493965A
JPS5493965A JP74978A JP74978A JPS5493965A JP S5493965 A JPS5493965 A JP S5493965A JP 74978 A JP74978 A JP 74978A JP 74978 A JP74978 A JP 74978A JP S5493965 A JPS5493965 A JP S5493965A
Authority
JP
Japan
Prior art keywords
area
region
metallized
insulating substrate
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP74978A
Other languages
Japanese (ja)
Inventor
Shuichi Osaka
Takashi Kondo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP74978A priority Critical patent/JPS5493965A/en
Publication of JPS5493965A publication Critical patent/JPS5493965A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H01L2224/05553—Shape in top view being rectangular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements

Landscapes

  • Wire Bonding (AREA)

Abstract

PURPOSE: To reduce the thermal resistance of a semiconductor vessel and further shorten the length of a metallic narrow wire by making the area of a metallized region on the first insulating substrate larger than the area of the aperture part of the second insulating substrate.
CONSTITUTION: Insulating substrate 6 equipped with aperture part 4 and plural metallized leads 5 is provided on the first insulating substrate 1. Then, metallized region 3 is so provided that semiconductor element 2 may be fixed onto substrate 1. Furhter, electrode 7 of this element 2 and metallized lead 5 are connected by metallic narrow wire 8. In this case, the area of metallized region 3 is made larger than the area of aperture 4 so that region 3 may reache a region where substrates 1 and 6 overlap. As a result, since tha area of metallized region 3 becomes large and thermal resistance is reduced, the maximum temperature of the semiconductor device can be made lower. Further, since the length of metallic narrow wire 8 can be made short, the connection work for metallic narrow wires becomes easy, and the short-circuit to others can be prevented.
COPYRIGHT: (C)1979,JPO&Japio
JP74978A 1978-01-06 1978-01-06 Semiconductor vessel Pending JPS5493965A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP74978A JPS5493965A (en) 1978-01-06 1978-01-06 Semiconductor vessel

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP74978A JPS5493965A (en) 1978-01-06 1978-01-06 Semiconductor vessel

Publications (1)

Publication Number Publication Date
JPS5493965A true JPS5493965A (en) 1979-07-25

Family

ID=11482337

Family Applications (1)

Application Number Title Priority Date Filing Date
JP74978A Pending JPS5493965A (en) 1978-01-06 1978-01-06 Semiconductor vessel

Country Status (1)

Country Link
JP (1) JPS5493965A (en)

Similar Documents

Publication Publication Date Title
JPS5513933A (en) Circuit element substrate and its manufacturing method
JPS5493965A (en) Semiconductor vessel
JPS5643740A (en) Semiconductor wafer
JPS57130443A (en) Substrate for hybrid integrated circuit
JPS5588346A (en) Packaging method for semiconductor element
JPS5348670A (en) Electrode structure of semiconductor element
JPS5561041A (en) Packaging device for semiconductor integrated circuit
JPS5571053A (en) Circuit device
JPS5496366A (en) Semiconductor device
JPS5398072A (en) Weathering wiring electrical couductor
JPS5527645A (en) Semiconductor device
JPS5544755A (en) Semiconductor container
JPS54100277A (en) Semiconductor element for hybrid integrated circuit
JPS5539631A (en) Semiconductor device
JPS52104869A (en) Manufacture for semiconductor device
JPS5355992A (en) Semiconductor device
JPS55128864A (en) Semiconductor device
JPS57121239A (en) Semiconductor device
JPS558035A (en) Semiconductor
JPS5596674A (en) Semiconductor electrode
JPS5571031A (en) Semiconductor device
JPS53141575A (en) Semiconductor device
JPS54124988A (en) Hybrid type semiconductor device
JPS5552242A (en) Semiconductor device
JPS54139475A (en) Semiconductor device