JPS5488081A - Mounting method of semiconductor device - Google Patents

Mounting method of semiconductor device

Info

Publication number
JPS5488081A
JPS5488081A JP15678577A JP15678577A JPS5488081A JP S5488081 A JPS5488081 A JP S5488081A JP 15678577 A JP15678577 A JP 15678577A JP 15678577 A JP15678577 A JP 15678577A JP S5488081 A JPS5488081 A JP S5488081A
Authority
JP
Japan
Prior art keywords
film
heat sink
substrate
melting point
circuit substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15678577A
Other languages
Japanese (ja)
Inventor
Shiro Takeda
Yuji Nagai
Minoru Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15678577A priority Critical patent/JPS5488081A/en
Publication of JPS5488081A publication Critical patent/JPS5488081A/en
Pending legal-status Critical Current

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  • Die Bonding (AREA)

Abstract

PURPOSE: To enable the mounting to the heat sink quickly and easily, by forming the polybutadiene resin film in advance, placing it between the circuit substrate and the heat sink, and heating it to a given temperature.
CONSTITUTION: The film 4 having a given thickness is made with thermoplastic polybutadiene resin 70°C or more in melting point. If necessary, the film 4 is made by mixing metal powder or inorganic metal compound to the polybutadiene resin 40°C or more in melting point. This film 4 is placed on the heat sink 3 and the ceramic circuit substrate 2 is placed on it, inserting the film 4 between them. Further, IC chip is mounted on the substrate 2. Further, the assembly is heated to the melting point or more of the resin used and the substrate 2 is bonded to the heat sink 3, and after that it is cooled. In removing the substrate 2, by heating again the assambly to the memlting point or more, it can easily be removed, allowing to mount new circuit substrate.
COPYRIGHT: (C)1979,JPO&Japio
JP15678577A 1977-12-26 1977-12-26 Mounting method of semiconductor device Pending JPS5488081A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15678577A JPS5488081A (en) 1977-12-26 1977-12-26 Mounting method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15678577A JPS5488081A (en) 1977-12-26 1977-12-26 Mounting method of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5488081A true JPS5488081A (en) 1979-07-12

Family

ID=15635248

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15678577A Pending JPS5488081A (en) 1977-12-26 1977-12-26 Mounting method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5488081A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55130134A (en) * 1979-03-30 1980-10-08 Hitachi Ltd Bonding method of semiconductor pellet
JPS57128933A (en) * 1981-02-02 1982-08-10 Nec Corp Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55130134A (en) * 1979-03-30 1980-10-08 Hitachi Ltd Bonding method of semiconductor pellet
JPS57128933A (en) * 1981-02-02 1982-08-10 Nec Corp Semiconductor device

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