JPS5440583A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5440583A
JPS5440583A JP10667377A JP10667377A JPS5440583A JP S5440583 A JPS5440583 A JP S5440583A JP 10667377 A JP10667377 A JP 10667377A JP 10667377 A JP10667377 A JP 10667377A JP S5440583 A JPS5440583 A JP S5440583A
Authority
JP
Japan
Prior art keywords
substrate
film
semiconductor device
adhering
sio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10667377A
Other languages
Japanese (ja)
Other versions
JPS6214944B2 (en
Inventor
Kenji Minami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP10667377A priority Critical patent/JPS5440583A/en
Publication of JPS5440583A publication Critical patent/JPS5440583A/en
Publication of JPS6214944B2 publication Critical patent/JPS6214944B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To radiate generated heat after being conducted to a substrate effectively by adhering an Al film with excellent thermal conductivity onto a substrate, on which a semiconductor element is formed, via a SiO2 insulating film and by making the Al film and the substrate in direct contact by using the region where no element is formed.
COPYRIGHT: (C)1979,JPO&Japio
JP10667377A 1977-09-07 1977-09-07 Semiconductor device Granted JPS5440583A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10667377A JPS5440583A (en) 1977-09-07 1977-09-07 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10667377A JPS5440583A (en) 1977-09-07 1977-09-07 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5440583A true JPS5440583A (en) 1979-03-30
JPS6214944B2 JPS6214944B2 (en) 1987-04-04

Family

ID=14439581

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10667377A Granted JPS5440583A (en) 1977-09-07 1977-09-07 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5440583A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01214048A (en) * 1988-02-23 1989-08-28 Fujitsu Ltd Semiconductor integrated device
US7154148B2 (en) 1997-01-18 2006-12-26 Semiconductor Energy Laboratory Co., Ltd. Hybrid circuit and electronic device using same
WO2011001494A1 (en) * 2009-06-29 2011-01-06 富士通株式会社 Semiconductor device and manufacturing method thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5080787A (en) * 1973-11-14 1975-07-01
JPS5147371A (en) * 1974-10-21 1976-04-22 Fujitsu Ltd HANDOTA ISOCHI

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5080787A (en) * 1973-11-14 1975-07-01
JPS5147371A (en) * 1974-10-21 1976-04-22 Fujitsu Ltd HANDOTA ISOCHI

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01214048A (en) * 1988-02-23 1989-08-28 Fujitsu Ltd Semiconductor integrated device
US7154148B2 (en) 1997-01-18 2006-12-26 Semiconductor Energy Laboratory Co., Ltd. Hybrid circuit and electronic device using same
US7619282B2 (en) 1997-01-18 2009-11-17 Semiconductor Energy Laboratory Co., Ltd. Hybrid circuit and electronic device using same
WO2011001494A1 (en) * 2009-06-29 2011-01-06 富士通株式会社 Semiconductor device and manufacturing method thereof
JP5335914B2 (en) * 2009-06-29 2013-11-06 富士通株式会社 Semiconductor device and manufacturing method thereof
US8946857B2 (en) 2009-06-29 2015-02-03 Fujitsu Limited Semiconductor device for effectively disperse heat generated from heat generating device

Also Published As

Publication number Publication date
JPS6214944B2 (en) 1987-04-04

Similar Documents

Publication Publication Date Title
JPS5440583A (en) Semiconductor device
JPS5420671A (en) Production of semiconductor devices
JPS534469A (en) Semiconductor device
JPS5236980A (en) Heat sink for semiconductor devices
JPS547864A (en) Manufacture for semiconductor device
JPS52146563A (en) Semiconductor device
JPS5220773A (en) Semi-conductor element
JPS5253670A (en) Semiconductor device
JPS52117063A (en) Preparation of ohmic ontact layer in semiconductor device
JPS5267978A (en) Boiling-cooling type semiconductor unit
JPS5420670A (en) Surface stabilizing method of semiconductor elements
JPS547271A (en) Semiconductor electrode structure
JPS53139476A (en) Manufacture of semiconductor device
JPS5350674A (en) Semiconductor device
JPS5335375A (en) Heating method
JPS52135281A (en) Semiconductor device
JPS52147971A (en) Semiconductor device
JPS5399775A (en) Manufacture of semiconductor device
JPS5374365A (en) Semiconductor ceramic package
JPS5353971A (en) Production of semiconductor device
JPS53118993A (en) Manufacture for semiconductor device
JPS546775A (en) Semiconductor device featuring stepped electrode structure
JPS54871A (en) Manufacture of semiconductor device
JPS542661A (en) Semiconductor device
JPS5434784A (en) Semiconductor integrated circuit device