JPS5487482A - Schottky barrier diode - Google Patents
Schottky barrier diodeInfo
- Publication number
- JPS5487482A JPS5487482A JP15581177A JP15581177A JPS5487482A JP S5487482 A JPS5487482 A JP S5487482A JP 15581177 A JP15581177 A JP 15581177A JP 15581177 A JP15581177 A JP 15581177A JP S5487482 A JPS5487482 A JP S5487482A
- Authority
- JP
- Japan
- Prior art keywords
- metal
- reversely
- silicon layer
- circumferential edge
- reverse current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To reduce reverse current leakage by providing a reversely-conductive type high-resistance part to the contact part to the external circumference of Schottky metal of a semiconductor.
CONSTITUTION: At the contact surface side with metal 2 of silicon layer 1, P-type impurities, which are reversely conductive to n-type silicon layer 1, are doped thin from the part a trifle inside of the external circumference of metal 2 over the circumferential edge, thereby forming high-resistance part 11. Consequently, the reverse current leakage at the circumferential edge can be reduced remarkably without nearly changing other characteristics.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15581177A JPS5487482A (en) | 1977-12-24 | 1977-12-24 | Schottky barrier diode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15581177A JPS5487482A (en) | 1977-12-24 | 1977-12-24 | Schottky barrier diode |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5487482A true JPS5487482A (en) | 1979-07-11 |
Family
ID=15613975
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15581177A Pending JPS5487482A (en) | 1977-12-24 | 1977-12-24 | Schottky barrier diode |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5487482A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55156372A (en) * | 1979-05-25 | 1980-12-05 | Hitachi Ltd | Schottky barrier diode |
JPH01259558A (en) * | 1988-04-09 | 1989-10-17 | Sanken Electric Co Ltd | Schottky barrier semiconductor device |
JPH01266761A (en) * | 1988-04-18 | 1989-10-24 | Sanken Electric Co Ltd | Manufacture of schottky barrier semiconductor device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4916231A (en) * | 1972-06-06 | 1974-02-13 | ||
JPS508312A (en) * | 1973-05-28 | 1975-01-28 |
-
1977
- 1977-12-24 JP JP15581177A patent/JPS5487482A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4916231A (en) * | 1972-06-06 | 1974-02-13 | ||
JPS508312A (en) * | 1973-05-28 | 1975-01-28 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55156372A (en) * | 1979-05-25 | 1980-12-05 | Hitachi Ltd | Schottky barrier diode |
JPH01259558A (en) * | 1988-04-09 | 1989-10-17 | Sanken Electric Co Ltd | Schottky barrier semiconductor device |
JPH01266761A (en) * | 1988-04-18 | 1989-10-24 | Sanken Electric Co Ltd | Manufacture of schottky barrier semiconductor device |
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