JPS5550656A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5550656A JPS5550656A JP12365878A JP12365878A JPS5550656A JP S5550656 A JPS5550656 A JP S5550656A JP 12365878 A JP12365878 A JP 12365878A JP 12365878 A JP12365878 A JP 12365878A JP S5550656 A JPS5550656 A JP S5550656A
- Authority
- JP
- Japan
- Prior art keywords
- regions
- emitter
- base
- film
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To decrease noises, by eliminating the need for special barrier metal by extracting electrodes from emitter regions through polycrystal Si layers and by shifting emitter-base junction and emitter contact holes on the same plane.
CONSTITUTION: A p-type base region 2 is diffusion-formed into a n-type Si substrate 1 and three n-type emitter regions 3 are mounted into the region 2, but the regions 3 are made up in approximate, parallel thin strips at that time and divided into three portions by partitioning the midway. Thin strip base-contact regions 4 are diffusion-built up being positioned among these regions 3, and portions except these regions are covered with an insulating film 5. Thin low resistance polycrystal layers 6 connected to the region 2 are grown on the regions 3 and the film 5, and the layers 6 and the film 5 are coated with an insulating film 8 provided with emitter-contact holes 7 and base-contact holes 9. Comb-teeth-like emitter-base electrodes 10, 11, which teeth mutually engage, are mounted onto the film 8 by utilizing the holes 7, 9.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12365878A JPS5550656A (en) | 1978-10-09 | 1978-10-09 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12365878A JPS5550656A (en) | 1978-10-09 | 1978-10-09 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5550656A true JPS5550656A (en) | 1980-04-12 |
Family
ID=14866061
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12365878A Pending JPS5550656A (en) | 1978-10-09 | 1978-10-09 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5550656A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5974672A (en) * | 1982-10-20 | 1984-04-27 | Mitsubishi Electric Corp | Semiconductor integrated circuit device |
CN106257629A (en) * | 2015-06-22 | 2016-12-28 | 格罗方德半导体公司 | There is the bipolar junction transistor that biconial emitter stage refers to |
-
1978
- 1978-10-09 JP JP12365878A patent/JPS5550656A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5974672A (en) * | 1982-10-20 | 1984-04-27 | Mitsubishi Electric Corp | Semiconductor integrated circuit device |
CN106257629A (en) * | 2015-06-22 | 2016-12-28 | 格罗方德半导体公司 | There is the bipolar junction transistor that biconial emitter stage refers to |
CN106257629B (en) * | 2015-06-22 | 2019-10-15 | 格罗方德半导体公司 | The bipolar junction transistor referred to biconial emitter |
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