JPS54112182A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS54112182A
JPS54112182A JP2008778A JP2008778A JPS54112182A JP S54112182 A JPS54112182 A JP S54112182A JP 2008778 A JP2008778 A JP 2008778A JP 2008778 A JP2008778 A JP 2008778A JP S54112182 A JPS54112182 A JP S54112182A
Authority
JP
Japan
Prior art keywords
region
type
diffusion
regions
buried zener
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008778A
Other languages
Japanese (ja)
Inventor
Koichiro Misaki
Kunihiko Yoshimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP2008778A priority Critical patent/JPS54112182A/en
Publication of JPS54112182A publication Critical patent/JPS54112182A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To realize a breakdown at the whole current level with resistance at a breakdown time reduced, by causing a breakdown in a bank by providing a buried Zener diode into a semiconductor substrate.
CONSTITUTION: Through oxidized film 313 adhered onto P-type semiconductor substrate 301, N+-type region 314 is formed, in which P-type region 315 is formed by diffusion. Into substrate 301, P-type insulating separate regions 316 are provided at both sides of region 314, and N-type layer 305 is formed on the entire surface by epitaxial growth and then covered with oxidized film 310. Next, P-type insulation region 317, P-type buried Zener region 318, and P-type circumferential region 319 of the buried Zener region are formed by diffusion in layer 305 being positioned over regions 316 and 315 and then extended to regions 316 and 315 through forced diffusion, thereby forming regions 306 to 308. Next, buried Zener region 307 is covered, N+-type emitter region 304 is formed by diffusion, and cathode and anode electrodes 311 and 312 are fitted.
COPYRIGHT: (C)1979,JPO&Japio
JP2008778A 1978-02-22 1978-02-22 Semiconductor device Pending JPS54112182A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008778A JPS54112182A (en) 1978-02-22 1978-02-22 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008778A JPS54112182A (en) 1978-02-22 1978-02-22 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS54112182A true JPS54112182A (en) 1979-09-01

Family

ID=12017315

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008778A Pending JPS54112182A (en) 1978-02-22 1978-02-22 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS54112182A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57207380A (en) * 1981-06-16 1982-12-20 Rohm Co Ltd Zener diode
JPS5946559U (en) * 1982-09-21 1984-03-28 石川　勇 Nostril-type filter
JPS5994879A (en) * 1982-11-24 1984-05-31 New Japan Radio Co Ltd Semiconductor device
JPS60149152U (en) * 1984-03-15 1985-10-03 新日本無線株式会社 embedded zener diode
JPH01194369A (en) * 1987-10-30 1989-08-04 Precision Monolithics Inc Buried zener diode and method of forming it
CN104638025A (en) * 2013-11-06 2015-05-20 精工爱普生株式会社 Semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5085284A (en) * 1973-11-29 1975-07-09

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5085284A (en) * 1973-11-29 1975-07-09

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57207380A (en) * 1981-06-16 1982-12-20 Rohm Co Ltd Zener diode
JPS5946559U (en) * 1982-09-21 1984-03-28 石川　勇 Nostril-type filter
JPS5994879A (en) * 1982-11-24 1984-05-31 New Japan Radio Co Ltd Semiconductor device
JPS60149152U (en) * 1984-03-15 1985-10-03 新日本無線株式会社 embedded zener diode
JPH0346507Y2 (en) * 1984-03-15 1991-10-01
JPH01194369A (en) * 1987-10-30 1989-08-04 Precision Monolithics Inc Buried zener diode and method of forming it
CN104638025A (en) * 2013-11-06 2015-05-20 精工爱普生株式会社 Semiconductor device

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