JPS5488082A - Manufacture for semiconductor device - Google Patents
Manufacture for semiconductor deviceInfo
- Publication number
- JPS5488082A JPS5488082A JP15681377A JP15681377A JPS5488082A JP S5488082 A JPS5488082 A JP S5488082A JP 15681377 A JP15681377 A JP 15681377A JP 15681377 A JP15681377 A JP 15681377A JP S5488082 A JPS5488082 A JP S5488082A
- Authority
- JP
- Japan
- Prior art keywords
- film
- mask
- oxide film
- type
- opening
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Local Oxidation Of Silicon (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To enable highly accurate opening and to prevent open electrode stage, while keeping the self alignment, even with the nitride film eliminated, by inserting thick CVD oxide film of the surface oxide film.
CONSTITUTION: The CVD oxide film 35 is laminated and roughly opened on the thermal oxide film 34 of the N type Si substrate 31 having the base layer 32 of the P type protection ring type, by means of etching speed difference, and the films 34 and 35 are unified with high temperature treatment. Next, the Si3N4 mask 37 is formed accurately and the layer 32 is exposed 42 with the film 37 by using the resist mask 40. The mask 40 is changed to 43, and the film 35 is opened 44 with the film 37. Next, since the opening 42 is already formed on the film 34 even by removing the mask 43 and the nitride film 37, self-alignment is kept, and since the nitride film is removed, no stage opening is caused in forming the electrodes 49 and 50 and ocating the N type doped polycrystal Si 45.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15681377A JPS5488082A (en) | 1977-12-26 | 1977-12-26 | Manufacture for semiconductor device |
US05/969,007 US4210689A (en) | 1977-12-26 | 1978-12-13 | Method of producing semiconductor devices |
GB7848841A GB2014361B (en) | 1977-12-26 | 1978-12-18 | Method of producing semiconductor devices |
DE2855823A DE2855823C2 (en) | 1977-12-26 | 1978-12-22 | Process for manufacturing semiconductor devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15681377A JPS5488082A (en) | 1977-12-26 | 1977-12-26 | Manufacture for semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5488082A true JPS5488082A (en) | 1979-07-12 |
JPS5620709B2 JPS5620709B2 (en) | 1981-05-15 |
Family
ID=15635880
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15681377A Granted JPS5488082A (en) | 1977-12-26 | 1977-12-26 | Manufacture for semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5488082A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60219770A (en) * | 1984-04-16 | 1985-11-02 | Rohm Co Ltd | Manufacture of semiconductor device |
-
1977
- 1977-12-26 JP JP15681377A patent/JPS5488082A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60219770A (en) * | 1984-04-16 | 1985-11-02 | Rohm Co Ltd | Manufacture of semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS5620709B2 (en) | 1981-05-15 |
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