JPS5780719A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5780719A
JPS5780719A JP15653280A JP15653280A JPS5780719A JP S5780719 A JPS5780719 A JP S5780719A JP 15653280 A JP15653280 A JP 15653280A JP 15653280 A JP15653280 A JP 15653280A JP S5780719 A JPS5780719 A JP S5780719A
Authority
JP
Japan
Prior art keywords
psg
layer
wire
moisture preventive
high density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15653280A
Other languages
Japanese (ja)
Inventor
Shuji Tabuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15653280A priority Critical patent/JPS5780719A/en
Publication of JPS5780719A publication Critical patent/JPS5780719A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To prevent corrosion of a wire by externally completely shielding a a PSG layer of high density with a moisture preventive layer preferably contacted with a substrate, a wiring layer and an insulating layer preferably contacted with the moisture preventive layer, and wire. CONSTITUTION:A wiring pattern 4 on a PSG 3 and a moisture preventive layer 9 crossing over the PSG 3 and the dicing wire 6 at the peripheral edge of a chip are formed of metallic layers containing aluminum. A low density PSG of Si3N4 protective insulating film 5 is formed on the layer 9, the PSG 3 and the wiring pattern 4. It is cut and separated along the line 6. According to this structure, the PSG 3 of high density is completely externally shielded by the layer 9 and the wire 4, and no water is immersed. Accordingly, no phosphoric acid is produced in the boundary between the PSG 3 and the wire 4 and is not corroded.
JP15653280A 1980-11-07 1980-11-07 Semiconductor device Pending JPS5780719A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15653280A JPS5780719A (en) 1980-11-07 1980-11-07 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15653280A JPS5780719A (en) 1980-11-07 1980-11-07 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5780719A true JPS5780719A (en) 1982-05-20

Family

ID=15629843

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15653280A Pending JPS5780719A (en) 1980-11-07 1980-11-07 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5780719A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63128733A (en) * 1986-11-19 1988-06-01 Sony Corp Semiconductor device
JPH01315163A (en) * 1988-02-12 1989-12-20 Mitsubishi Electric Corp Manufacture of semiconductor integrated circuit device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4933907A (en) * 1972-07-28 1974-03-28
JPS49114344A (en) * 1973-02-28 1974-10-31
JPS5348474A (en) * 1976-10-15 1978-05-01 Hitachi Ltd Electronic parts
JPS54137273A (en) * 1978-04-17 1979-10-24 Nec Corp Semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4933907A (en) * 1972-07-28 1974-03-28
JPS49114344A (en) * 1973-02-28 1974-10-31
JPS5348474A (en) * 1976-10-15 1978-05-01 Hitachi Ltd Electronic parts
JPS54137273A (en) * 1978-04-17 1979-10-24 Nec Corp Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63128733A (en) * 1986-11-19 1988-06-01 Sony Corp Semiconductor device
JPH01315163A (en) * 1988-02-12 1989-12-20 Mitsubishi Electric Corp Manufacture of semiconductor integrated circuit device

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