JPS54154974A - Electron beam exposure device - Google Patents

Electron beam exposure device

Info

Publication number
JPS54154974A
JPS54154974A JP6406678A JP6406678A JPS54154974A JP S54154974 A JPS54154974 A JP S54154974A JP 6406678 A JP6406678 A JP 6406678A JP 6406678 A JP6406678 A JP 6406678A JP S54154974 A JPS54154974 A JP S54154974A
Authority
JP
Japan
Prior art keywords
exposure
register
electron beam
pattern
time
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6406678A
Other languages
Japanese (ja)
Inventor
Haruo Tsuchikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP6406678A priority Critical patent/JPS54154974A/en
Publication of JPS54154974A publication Critical patent/JPS54154974A/en
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To shorten the working time of exposure for the vector scanning by deciding queuing time in accordance with the flying distance of the electron beam. CONSTITUTION:The information of the X-direction end point of pattern A and the X-direction start point of pattern B are memorized in register 1 and 2 each in the stage under which the exposure is shifted from pattern A to B. In the same way, both the end and start points of both patterns in the Y-direction are memorized in register 3 and 4 respectively. Based on these memorization, the X- and Y-direction flying distances of the electron beam are calculated 5 and 6 to be supplied to register 7 with memorization of the larger distance. Then the queuing time signals are generated 8 according to the output value of register 7 to shield the electron beam. Thus the start of exposure is reduced. During this time, the D/A converter, the amplifier for driving polarizer and others are adjusted completely. The adjustment is finished properly for the polarization system reating the small flying distance, and then the beam shielding is opened to carry out exposure. Accordingly, the exposure working time can be accelerated greatly compared with the conventional method in which the maximum queuing time is applied irrespective of the beam flying distance.
JP6406678A 1978-05-29 1978-05-29 Electron beam exposure device Pending JPS54154974A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6406678A JPS54154974A (en) 1978-05-29 1978-05-29 Electron beam exposure device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6406678A JPS54154974A (en) 1978-05-29 1978-05-29 Electron beam exposure device

Publications (1)

Publication Number Publication Date
JPS54154974A true JPS54154974A (en) 1979-12-06

Family

ID=13247342

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6406678A Pending JPS54154974A (en) 1978-05-29 1978-05-29 Electron beam exposure device

Country Status (1)

Country Link
JP (1) JPS54154974A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5683032A (en) * 1979-12-12 1981-07-07 Fujitsu Ltd Exposing device of electronic beam
JPS5987815A (en) * 1982-11-10 1984-05-21 Nippon Telegr & Teleph Corp <Ntt> Deflection controlling for thereof electron beam and circuit
JPH06501590A (en) * 1990-07-23 1994-02-17 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン High precision, high flexibility energy beam processing system

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5683032A (en) * 1979-12-12 1981-07-07 Fujitsu Ltd Exposing device of electronic beam
JPS5987815A (en) * 1982-11-10 1984-05-21 Nippon Telegr & Teleph Corp <Ntt> Deflection controlling for thereof electron beam and circuit
JPH06501590A (en) * 1990-07-23 1994-02-17 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン High precision, high flexibility energy beam processing system

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