JPS54154974A - Electron beam exposure device - Google Patents
Electron beam exposure deviceInfo
- Publication number
- JPS54154974A JPS54154974A JP6406678A JP6406678A JPS54154974A JP S54154974 A JPS54154974 A JP S54154974A JP 6406678 A JP6406678 A JP 6406678A JP 6406678 A JP6406678 A JP 6406678A JP S54154974 A JPS54154974 A JP S54154974A
- Authority
- JP
- Japan
- Prior art keywords
- exposure
- register
- electron beam
- pattern
- time
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Analytical Chemistry (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Electron Beam Exposure (AREA)
Abstract
PURPOSE:To shorten the working time of exposure for the vector scanning by deciding queuing time in accordance with the flying distance of the electron beam. CONSTITUTION:The information of the X-direction end point of pattern A and the X-direction start point of pattern B are memorized in register 1 and 2 each in the stage under which the exposure is shifted from pattern A to B. In the same way, both the end and start points of both patterns in the Y-direction are memorized in register 3 and 4 respectively. Based on these memorization, the X- and Y-direction flying distances of the electron beam are calculated 5 and 6 to be supplied to register 7 with memorization of the larger distance. Then the queuing time signals are generated 8 according to the output value of register 7 to shield the electron beam. Thus the start of exposure is reduced. During this time, the D/A converter, the amplifier for driving polarizer and others are adjusted completely. The adjustment is finished properly for the polarization system reating the small flying distance, and then the beam shielding is opened to carry out exposure. Accordingly, the exposure working time can be accelerated greatly compared with the conventional method in which the maximum queuing time is applied irrespective of the beam flying distance.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6406678A JPS54154974A (en) | 1978-05-29 | 1978-05-29 | Electron beam exposure device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6406678A JPS54154974A (en) | 1978-05-29 | 1978-05-29 | Electron beam exposure device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54154974A true JPS54154974A (en) | 1979-12-06 |
Family
ID=13247342
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6406678A Pending JPS54154974A (en) | 1978-05-29 | 1978-05-29 | Electron beam exposure device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54154974A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5683032A (en) * | 1979-12-12 | 1981-07-07 | Fujitsu Ltd | Exposing device of electronic beam |
JPS5987815A (en) * | 1982-11-10 | 1984-05-21 | Nippon Telegr & Teleph Corp <Ntt> | Deflection controlling for thereof electron beam and circuit |
JPH06501590A (en) * | 1990-07-23 | 1994-02-17 | インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン | High precision, high flexibility energy beam processing system |
-
1978
- 1978-05-29 JP JP6406678A patent/JPS54154974A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5683032A (en) * | 1979-12-12 | 1981-07-07 | Fujitsu Ltd | Exposing device of electronic beam |
JPS5987815A (en) * | 1982-11-10 | 1984-05-21 | Nippon Telegr & Teleph Corp <Ntt> | Deflection controlling for thereof electron beam and circuit |
JPH06501590A (en) * | 1990-07-23 | 1994-02-17 | インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン | High precision, high flexibility energy beam processing system |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB1160353A (en) | Radiation Beam Apparatus. | |
JPS54154974A (en) | Electron beam exposure device | |
JPS55146931A (en) | Depicting method by electronic beam | |
JPS5412676A (en) | Position matching method for electron beam exposure | |
JPS5922325A (en) | Electron beam drawing device | |
JPS54105970A (en) | Electron beam drawing device and its use | |
JPS5437685A (en) | Electron beam exposure unit | |
JPS53120277A (en) | Electron beam exposure device | |
JPS5515219A (en) | Electronic beam exposure device | |
JPS54146570A (en) | Focusing device for electron microscope | |
JPS5320773A (en) | Electron beam scanning apparatus and its scanning method | |
JPS52117578A (en) | Electron beam exposing method | |
JPS54108580A (en) | Electron-beam exposure device | |
JPS57148351A (en) | Laser annealing apparatus for semiconductor element | |
JPS5455382A (en) | Electron beam exposure system | |
JPS567429A (en) | Patterning device | |
JPS57162334A (en) | Electron beam exposing method | |
JPS5750432A (en) | Drawing method by electron beam | |
JPS5891638A (en) | Method for electron beam exposure | |
JPS5656634A (en) | Setting method of wafer to exposure room | |
JPS5492064A (en) | Electron beam exposure device | |
JPS5396676A (en) | Method and apparatus for positioning by electron beam exposure | |
JPS54130188A (en) | Electronic probe device | |
JPS56107555A (en) | Detection of position of electron beam | |
JPS59193026A (en) | Electron beam drawing device |